DIODE 6A 100V Search Results

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS

IXFA6N120P

Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
Contextual Info: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

HiperFET

Abstract: MOSFET 1200v 3a IXFA6N120P
Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

IXTP12N50PM

Abstract: 12n50p d1518
Contextual Info: PolarTM Power MOSFET IXTP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

IXTP12N50PM

Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings

IXFP12N50PM

Abstract: T12N50 IXFP12N50 12n50 41408
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR

IXTT6N150

Contextual Info: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH6N150

Abstract: 6n150
Contextual Info: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

AO4482L

Abstract: ao4482
Contextual Info: AO4482L 100V N-Channel MOSFET General Description Product Summary The AO4482L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,

Contextual Info: SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK o 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: AO4482 100V N-Channel MOSFET General Description Product Summary The AO4482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,

Contextual Info: Green Product STD12L01 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 100V 12A 145 @ VGS=10V G D Rugged and reliable.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low

SFP9520

Contextual Info: SFP9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge o 175 C Opereting Temperature TO-220 Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -100V

Contextual Info: SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK o 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

2E12

Abstract: 2N7309D 2N7309H 2N7309R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9130 D, R, H 2N7309D, 2N7309R 2N7309H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 6A, -100V, RDS(on) = 0.565Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: SFW/I9520 A dvanced Power MOSEET FEATURES B ^D S S • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10|iA M ax. @ VDS = -100V

sfr 135

Abstract: TA 8269 H diode SFR-135
Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVdss = -100 V • Avalanche Rugged Technology = 0.6 £2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = -4.9 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V

2E12

Abstract: 2N7307D 2N7307H 2N7307R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 6A, -100V, RDS(on) = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK o 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -100V