DIODE 6A11 Search Results

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

diode c24 06 6D

Abstract: LTC4098-3.6
Contextual Info: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

C26B

Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Contextual Info: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information FF600R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Contextual Info: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Abstract: A20-LCD15.6 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC

diode F4 6A

Abstract: 4F36F123
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

ZXMN6A11DN8

Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
Contextual Info: ZXMN6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

ZXMN6A11G

Abstract: ZXMN6A11GFTA ZXMN6A11GFTC
Contextual Info: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

diode 6a11

Abstract: 6a11
Contextual Info: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN6A11DN8

Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC
Contextual Info: ZXMN6A11DN8 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

sot223 device Marking

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V ZXMN6A11G ZXMN6A11GTA ZXMN6A11GTC
Contextual Info: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

ZXMN6A11DN8TA

Abstract: ZXMN6A11DN8 6a11d
Contextual Info: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

ZXMN6A11G

Abstract: ZXMN6A11GTA ZXMN6A11GTC
Contextual Info: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

Contextual Info: A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • ID V BR DSS RDS(on) TA = 25°C 120m @ VGS= 10V 4.4A 180m @ VGS= 4.5V 3.5A Fast switching speed Low gate drive Low input capacitance

diode 6a11

Abstract: 6a11 ZXMN6A11G ZXMN6A11GTA
Contextual Info: A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • ID V BR DSS RDS(on) TA = 25°C 120mΩ @ VGS= 10V 4.4A 180mΩ @ VGS= 4.5V 3.5A Fast switching speed Low gate drive

zener diode A22

Abstract: ZENER A22 transistor smd 2ay 6ay smd A22 SMD CODE smd zener color codes blue ring on smd zener diode black yellow blue ring on smd diode A22W-3M-6D-02 BA9S
Contextual Info: Knob-type Selector Switch Cylindrical 22/25-dia. A22@ Install in 22-dia. or 25-dia. Panel Cutout • Lever for easily mounting and removing the Switch Unit ■ Increase wiring efficiency with three-row mounting of Switch Blocks. ■ Finger protection mechanism on Switch Unit provided as a

smd a22t

Abstract: black yellow blue ring on smd diode ZENER A22 blue ring on smd zener diode A22 SMD CODE resin capacitor a225 spst"Pushbutton Switch" datasheet A22H A22-12 A22Z-3500-1
Contextual Info: Pushbutton Switch Cylindrical 22/25-dia. A22 Install in 22-dia. or 25-dia. Panel Cutout (When Using a Ring) • Lever for easily mounting and removing the Switch Unit. ■ Increase wiring efficiency with three-row mounting of Switch Blocks. ■ Finger protection mechanism on Switch Unit provided as a

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: DATASHEET Digital DC/DC PMBus 10A Power Module ZL9010M Features The ZL9010M is a 10A adjustable output, step-down synchronous PMBus-compliant digital power supply. Included in the module is a high-performance digital PWM controller, power MOSFETs, an inductor and all the passive components

Contextual Info: DATASHEET Digital DC/DC PMBus 12A Module ZL9101M Features The ZL9101M is a 12A, variable output, step-down PMBus-compliant digital power supply. Included in the module is a high-performance digital PWM controller, power MOSFETs, an inductor, and all the passive components required for a