DIODE 79 Search Results

BAP51-02

Abstract: smd diode S4 diode S4 05 AS 15 f
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79

DIODE S4 74

Abstract: BAP50 BAP50-02 diode DB 3 C
Contextual Info: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE

diode DB 3 C

Abstract: BAP50 BAP50-02
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79

diode S4 05

Abstract: smd diode S4 diode smd JS 8 BAP51-02
Contextual Info: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE

792gb170

Abstract: UDC 1700
Contextual Info: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

1N5411

Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A

TSP70

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

780nm-5mW

Abstract: 780nm laser diode module 780nm laser diode 8 mW Infrared diode Laser Diode 4 pin DIODE infrared laser diode laser diode 12 pin laser diode 780 nm diode laser
Contextual Info: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Barrel Specs:

1PS79SB10

Abstract: M3D319 1PS79SB10/DG115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product data sheet 1998 Jul 16 NXP Semiconductors Product data sheet Schottky barrier diode 1PS79SB10 ; FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

R22A

Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

transistor R1d

Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

IGBT 1500

Abstract: M2 DIODE UDC 1700
Contextual Info: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM

792gb170

Abstract: semikron skiip 30 SemiSel 792GB170-373CTV
Contextual Info: SKiiP 792GB170-373CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

BAP51-02

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

1gg5

Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
Contextual Info: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161

HALF WAVE RECTIFIER CIRCUITS

Abstract: two transistor forward DD200GB40 DD200GB80
Contextual Info: DIODE MODULE DD200GB UL;E76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating

DD200GB40

Abstract: DD200GB80
Contextual Info: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating

780nm laser diode 8 mW

Abstract: 780nm laser diode 780nm laser diode module laser diode 780 nm
Contextual Info: US-Lasers: 780nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size