DIODE 7C2 Search Results

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

SKM75GB120D

Abstract: cmos open collector and gate SKHI 65 SKM75GB12 igbt driver SKHI 23/12 semikron SKHI 22 SEMIKRON SKHI 65 SKHI23 FERRITE TRANSFORMER igbt 6.5 kv snubber
Contextual Info: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions 7 J $) () $, () K$" #" $# E%%

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

CERAMIC LEADLESS CHIP CARRIER

Abstract: cerdip z PACKAGE DIODE SMD A6 cy7c291 CY7C293A-30QMB PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC w14 smd transistor CY7C291A CY7C292A CY7C293A
Contextual Info: 1CY 7C29 2A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an

diode U3J

Abstract: Smd diode u3j csi24 CY7C292A-20DC CY7C291A-35DMB
Contextual Info: CY7C291A CY7C292A/CY7C293A P Yi.PX : V«*1 2K X 8 Reprogrammable PROM identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselect­

CYPRESS 7C291A

Abstract: CY7C293AL-35PC cy7c291 CY7C291A-25WMB CY7C291A CY7C292A CY7C293A
Contextual Info: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an

CY7C276-25JC

Abstract: C276 CY7C276 CY7C276-25HC C2761 CY7C276-30JC c2762 C2767
Contextual Info: 1CY 7C27 6 CY7C276 16K x 16 Reprogrammable PROM Features Functional Description • 0.8-micron CMOS for optimum speed/power The CY7C276 is a high-performance 16K-word by 16-bit CMOS PROM. It is available in a 44-pin PLCC/CLCC and a 44-pin LCC packages, and is 100% reprogrammable in windowed packages. The memory cells utilize proven EPROM

C2877

Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
Contextual Info: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.

C277

Abstract: C2776 CERAMIC LEADLESS CHIP CARRIER CY7C277 C2779 C2774
Contextual Info: 1CY 7C27 7 CY7C277 32K x 8 Reprogrammable Registered PROM Features • Programmable synchronous or asynchronous output enable • Windowed for reprogrammability • On-chip edge-triggered output registers • CMOS for optimum speed/power • EPROM technology, 100% programmable

semiconductor c243

Abstract: transistor c243 CY7C243-45QMB c243 diode c2432 C2434 C2437 cerdip z PACKAGE DN2540N5-G CY7C243
Contextual Info: 1CY 7C24 4 CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C243 and CY7C244 are packaged in 300-mil-wide and 600-mil-wide packages respectively. The reprogrammable packages are equipped with an erasure window. When exposed to UV light, these PROMs are erased and

3Cs 6 PIN SMD CHIP

Abstract: AFL smd code CY7C251 CY7C251-45PC Programming SMD code l32 u1p smd 7C251 CY7C254 W2265
Contextual Info: -c PRESS MbE D SEMICONDUCTOR • ^ 2 5 0 = ^ 2 0QGb7b7 1 , - if CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed Tor reprogrammability • Highspeed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251)

A15C

Abstract: CY7C287 CY7C287-55PC LCOS uv
Contextual Info: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)

SMD DIODE A13

Abstract: smd diode code A13 A13 smd smd transistor w16 CY7C251-45PC transistor smd w16 7c251 C2511 C2515 CY7C251-65WC
Contextual Info: 1CY 7C25 4 CY7C251 CY7C254 16K x 8 Power Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial The CY7C251 and CY7C254 are high-performance

CY7C225A

Contextual Info: 1CY 7C22 5A CY7C225A 512 x 8 Registered PROM Features • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power • Capable of withstanding greater than 2001V static • High speed discharge — 18 ns address set-up Functional Description

Contextual Info: CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Features Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output registers (7C277) Optional registered/latched address

CY7C235A

Contextual Info: 1CY 7C23 5A CY7C235A 1K x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed Functional Description — 18 ns address set-up The CY7C235A is a high-performance 1024 word by 8 bit electrically programmable read only memory packaged in a slim

C2613

Abstract: C2614 c2615 C2611 C2617 7C261 7C264 CY7C261 CY7C263 CY7C264
Contextual Info: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263

aj4 diode

Abstract: CY7C277 658f 7C277
Contextual Info: CYPRESS 4bE SEMICONDUCTOR J /s S - I SSfl'lbbS GG0bôb3 fl B C Y P D CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output

C2614

Abstract: CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4
Contextual Info: CY7C261 CY7C263/CY7C264 D Features PROMs 20 ns commercial Functional Description 25 ns (military) Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 220 mW when deselected Fast access: 20 ns EPROM technology 100% programĆ

cy7c245a-35dmb

Abstract: 7C245A CERAMIC LEADLESS CHIP CARRIER CY7C245A CY7C245A35DMB CY7C245A-35PC C245A-1 CY7C245A-25DMB
Contextual Info: 1CY 7C24 5A CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically programmable, read only memory packaged in a slim 300-mil

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: SEMiX 353GB176HD   +,-       # Absolute Maximum Ratings Symbol Conditions IGBT  .  )+ , 1 .  '+ , 145 '0(  2+( "   3( , )+( " 7+( " 9 )(  .  ')+ , '( >   )+ , 7)+ "   3( , )3+ " 7+( " '3( " :( " A 7( @@@ B '+(

Contextual Info: SEMiX 302GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  .  + , 1 .  '+ , 145   )+,-       # '0(  2(+ "   3( , )( " 7( " 9 )(  '( =   )+ , 23+ "   3( , )?( " 7( " )( " ?( " A 7( @@@ B '+( ,

Contextual Info: SEMiX 302GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  .  + , 1 .  '+ , 145   )+,-       # '0(  2(+ "   3( , )( " 7( " 9 )(  .  ')+ , '( >   )+ , 23+ "   3( , ):( " 7( " )( " :( " A 7( @@@ B '+(