DIODE 8308 Search Results

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

HL6362MG

Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Contextual Info: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated

SDL-5401-G1

Abstract: SDL-5422-H1 SDL laser dbr SDL-5421-G1 SDL 5700 SDL-5431-G1 sdl 5400 SDL laser diode sdl-5400 SDL-5400-G1
Contextual Info: « ê-' •e cu E c£ S E R I E f i I • ■■■■':• 2 S ca Hw *oos %£ UP TO 200 mW CW SINGLE MODE GaAIAs LASER DIODES High power in a diffraction limited, single spatial mode beam is provided by the SDL-5400 Series laser diode. The index guided laser emits in a

Mullard Mullard quick reference guide

Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: IRF8308MPbF DirectFET™ Power MOSFET ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V

SDL2361H1

Abstract: SDL-2300 SDL-2352-H1 SDL-2382-P1 SDL-2360 SDL-23-10-P1 6NA8 sdl-2380 SDL-2371-H SDL laser diode manual
Contextual Info: • UP TO 4.0 WATT CW HIGH BRIGHTNESS GaAIAs LASER DIODES Key Features 4, 3, 2, 1.2, 0.5 W cw Power 500, 370, 200, 100 and 50 pm Apertures High Efficiency MOCVD Quantum Well Design Internal TEC Option For Wavelength Control High Reliability Open Heat Sink, Window, and Fiber Packages

74LS324

Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
Contextual Info: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos

AAT8308

Abstract: AAT8308ITS-T1
Contextual Info: AAT8308 20V P-Channel Power MOSFET General Description Features The AAT8308 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's proprietary ultrahigh density Trench technology, and space saving

fluke 785 meter

Abstract: FLUKE 87 FLUKE 29 series II multimeter Fluke 37 multimeter FLUKE 87 series II multimeter FLUKE 80 series II service manual NEDA 1604 battery 6f22 em 700 multimeter Fluke PN 614487 operating manual for NEDA 1604 6F22
Contextual Info: 87 TRUE RMS MULTIMETER f * PN 834192 August 1988 Rev. 5, 1/93 1993 John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A 87 TRUE RMS MULTIMETER USER’S MANUAL FLUKE. NOTICE The Fluke 87 generates and uses radio frequency energy. If it is not used according to the

diode 8308

Abstract: TEMD6010FX01
Contextual Info: TEMD6010FX01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD6010FX01 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. It’s

s69 lf

Abstract: 4141II DEX ELECTRONICS LTD CAPACITOR 876-1421 bh 27 601 si419
Contextual Info: MC33164-3/MC34164M T I h e I C: n f i n i t e K P F L o w e r h (' 1 K I o f () \ I (. S 3V U ndervoltage P R O D U C T I O N n n o v a t i o n time after pow er returns. The MC33164-3 & MC34164-3 consist of a tem perature stable reference com parator with hysteresis, high-current clamping

LM 317 ST

Abstract: 805 SOT-89 Summit Electronics 56497 802408 876-1421
Contextual Info: T h e I P n f i n i t e o w e r I o f n n o v a t i o n P r o d u c t i o n DESCRIPTION The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in m icroproces­ sor-based systems. It offers the designer an econom ical, space efficient solution

optron

Abstract: sl 0380 sl 0380 r F63TNR FDR8308P R043
Contextual Info: FAIRCHILD SEMICONDUCTOR November 1998 tm FDR8308P Dual P-Channel, Logic Level, PowerTrench MOSFET General Description Features T he SuperSO T-8 fam ily of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

RSN 312 H 24

Abstract: ic RSN 315 H 42 RSN 315 H 42 RSN 312 RSN 312 H 42 rsn 313 bc 574 transistor AM7905 TRANSISTOR 7905A 79M574
Contextual Info: FVellmlnaiy H Am79M57/Am79M571 /Am79M574 Metering Subscriber Line Interface Circuit Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ P ro g ra m m a b le c o n s ta n t re s is tan c e feed L in e-feed c h a ra c te ris tic s in d e p e n d e n t of

FR4 epoxy dielectric constant 4.4

Abstract: HP16500C MC100EL16 RO4003 TS8308500 TSEV8308500G HP8665 HP8663 BGA72
Contextual Info: DESCRIPTION The TSEV8308500G Evaluation Board EB is a prototype board which has been designed in order to facilitate the evaluation and the characterization of the TS8308500 device (in CBGA72) up to its 1.3 GHz full power bandwidth at up to 500 Msps in the extended temperature range.

Contextual Info: □IE D • 001 4 51 1 MITSUBISHI 321 ■ M I T 5 (D IS C R E T E SC MITSUBISHI LASER DIODES SERIES M L 2 X X 1 FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ML2XX1 • Single longitudinal mode is a h ig h -P o w e r AIGaAs sem iconductor laser which provides a stable, single transverse mode

motorola analog ICs vol.1

Abstract: 45fs 500MSPS JTS8308500 TS81102G0 TS8308500 TSEV8308500G atmel 0825 G
Contextual Info: MAIN FEATURES ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! 8-bit resolution. 500 Msps min sampling rate. 1.3 GHz full power input bandwidth. Band Flatness: TBD Input VSWR (packaged device): TBD SINAD = 45 dB (7.2 Effective Bits), SFDR = 54 dBc @ FS = 500 Msps, FIN = 20 MHz :

876-1421

Contextual Info: > O LmFmiTY M i c- K o T he I n f i n i t e P h i h c: i o whr of k o I N i . n n o H s Transient I mmune Undervoltage Sensing P roducti on v a t i o n KEY DESCRIPTION Circuit D ata FEATURES FULLY CHARACTERIZED, TRANSIENT IMMUNE INPUT STAGE (See Product Highlight

sylvania, transformer

Abstract: SYLVANIA
Contextual Info: 7E6 Sylvania Type DUODIODE MEDIUM-MU TRIODE GT EQUIVALENT 8SR7GT o mi i if Tin 8W -L-7 PH Y SIC A L S P E C IF IC A T IO N S B a s e .f . L o c k -In 8 P in

BPW16N

Abstract: CQY 24
Contextual Info: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

CQY 26

Abstract: BPW17N diode 8308
Contextual Info: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

Contextual Info: a Preliminary Advanced Micro Devices A m 81C 176 CMOS Color Palette DISTINCTIVE CHARACTERISTICS • Triple 6-bit Digital-to-Analog Converters DACs ■ Plug-in Replacement for Inmos G171 and G176 ■ VGA hardware and software compatible ■ Clock rates up to 80 MHz