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Vishay Siliconix SI4190BDY-T1-GE3 N-CHANNEL 100 V (D-S) MOSFET SO-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4190BDY-T1-GE3	Digi-Reel	7,558		1	1 $2.67 10 $1.836 100 $1.2941 1000 $1.06932 10000 $1.06932	Buy Now
	SI4190BDY-T1-GE3	Cut Tape	7,558		1	1 $2.67 10 $1.836 100 $1.2941 1000 $1.06932 10000 $1.06932	Buy Now
	SI4190BDY-T1-GE3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.87362	Buy Now
Vishay Siliconix SI4196DY-T1-E3 MOSFET N-CH 20V 8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4196DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.19056	Buy Now
Vishay Siliconix SI4196DY-T1-GE3 MOSFET N-CH 20V 8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4196DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4190DY-T1-GE3 MOSFET N-CH 100V 20A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4190DY-T1-GE3	Digi-Reel			1	1 $2.35 10 $2.35 100 $2.35 1000 $2.35 10000 $2.35	Buy Now
	SI4190DY-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4190ADY-T1-GE3 MOSFET N-CH 100V 18.4A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4190ADY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.7644	Buy Now

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SI419 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SI4190ADY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 18.4A 8SO		Original	PDF		10
SI4190BDY-T1-GE3		Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET SO-		Original	PDF	190.73KB	7
SI4190DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 20A 8-SOIC		Original	PDF		10
SI4196DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC		Original	PDF		7
SI4196DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC		Original	PDF		7

SI419 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
63826 Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4190ADY Si4190ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63826	PDF
63826 Abstract: Si4190ADY Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4190ADY Si4190ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63826	PDF
Si4190ADY Abstract: si41 Contextual Info: SPICE Device Model Si4190ADY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4190ADY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si41	PDF
Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4190DY 2002/95/EC Si4190DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: si419 Contextual Info: Si4196DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4196DY AN609, 11-Nov-09 AN609 si419	PDF
Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4190DY 2002/95/EC Si4190DY-T1-GE3 18-Jul-08	PDF
Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4190ADY Si4190ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
2128S Abstract: si41 Contextual Info: SPICE Device Model Si4196DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4196DY 18-Jul-08 2128S si41	PDF
si41 Abstract: si4196 Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4196DY 2002/95/EC Si4196DY-T1-E3 18-Jul-08 si41 si4196	PDF
Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4196DY 2002/95/EC Si4196DY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
DIODE 2141 Abstract: si4190 Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4190DY 2002/95/EC Si4190DY-T1-GE3 18-Jul-08 DIODE 2141 si4190	PDF
Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4190DY 2002/95/EC Si4190DY-T1-GE3 18-Jul-08	PDF
Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4190DY 2002/95/EC Si4190DY-T1-GE3 11-Mar-11	PDF
Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4196DY 2002/95/EC Si4196DY-T1-E3 11-Mar-11	PDF

SI4190DY Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4190DY 2002/95/EC Si4190DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
so8 footprint Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
N-Channel MOSFETs Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs	PDF