DIODE 9.1 B3 Search Results

in5333

Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Contextual Info: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better

1c2980

Abstract: 1C2971 1n4000 DIODE zk 900 194 1C3002 DZD910 1C2973 1C2977 1C2970
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 3 4 DE I b3t.7aS5 □03011=1 l f 6367255 MOTOROLA SC D IO D E S /O P T O 3^C 38119 SILICON ZENER DIODE DICE (continued) - öS 1C2970 CHIP NO. — SERIES LINE SOURCE — DZD910 Device assembled from this chip type are similar to or

Contextual Info: MOTOROLA SC DIODES/OPTO 3^E ]> O b3ti75SS 00 0 3 0 1 =1 S QtlOT? 3EZ3.9D5 thru 3EZ400D5 ELECTRICAL CHARACTERISTICS (Ta =25°C unless otherwise noted) V F = 1.5 V Max, Ip = 200 mA for all types) Nominal Zener Voltage V z lz r Volts (Note 2) Test Current

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5 3EZ18D5 3EZ400D5
Contextual Info: MOTOROLA SC IME DIODES/OPTO 0 I b3b72S5 oo&Qcm 5 I Order this data sheet by 3EZ3.9D5/D MOTOROLA SEMICONDUCTOR T- / I - J 5“ TECHNICAL DATA 3EZ3.9D 5 thru Designer's Data Sheet 3E Z400D 5 3-Watt Surm etic 30 Silicon Zener Diodes 3-WATT ZENER REGULATOR DIODES

B37 zener diode

Abstract: SOD-18 BZX70 philips zener diode c24 b37 zener philips bzx70 zener diode c43 DIODE BZX70 philips zener diode BZX70-C75 philips zener diode c18
Contextual Info: BZX70 SERIES M A IN TEN A N C E TYPE JiJaE_] PH IL IP S INTERNATIONAL • 711D6Sb QG41b7b b37 M P H I N REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended fo r use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.

EE19 bobbin

Abstract: EPCOS 1000 LNK306PN lnk306pn led driver DER-172 EE19 transformer 1.1 mH with 4 pin vertical lnk30* an-37 lnk306 EE19 vertical 6 pin bobbin YW-047
Contextual Info: Design Example Report 9.1 W LED Driver Buck Converter Using LNK306PN Title Specification 108 VAC – 132 VAC Input, 70 V, 130 mA Output Application LED Arrays Author Applications Engineering Department Document Number DER-172 Date April 28, 2008 Revision 1.4

1N4726A

Abstract: zener diode 1N4726a motorola 1N4740A 1N4733A motorola 1N4726 MOTOROLA 1N4751A Motorola 1N4739A motorola 1N4761A 1N4734A Motorola 1N4730A
Contextual Info: 31E J> MOTOROLA SC DIODES/OPTO B b3b7255 OOâBôlQ 1N4728Athru 1N4764A E3MOT? T-Î1-13 ‘ E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25°C unless otherwise noted) VF = 1.2 V Max, If = 200 mA for all types. Nominal Zener Voltaqe Maximum Zener Impedance (Note 4)

1N4742A 12 volt zener diode

Abstract: MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33
Contextual Info: riOTOROLA SC D I O D E S / O P T O D b4E • b3b75SS 00fl5L*CH b7S ■ SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.1 Axial Leaded — continued SECTION 4.2.4.1.2 1-1.3 WATT DO-41 GLASS MULTIPLE PACKAGE QUANTITY (MPQ)

dc cdi

Abstract: CDLL965B 1N962BUR-1 1N986BUR-1 CDLL957B CDLL958B CDLL959B CDLL960B CDLL961B CDLL962B
Contextual Info: COMPENSATED DEVICES INC b3E D • S3G2SS4 DÜGGSG3 443 1N962BUR-1 THRU 1N986BUR-1 AVAILABLE IN J A N , JA N T X A N D JA N T X V ICDI 1N962BUR-1 THRU 1N986BUR-1 AND CDLL957B THRU CDLL986B •ZE N E R DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION

TMOS E-FET

Abstract: MTW6N60E
Contextual Info: MOTOROLA SC CXSTRS/R F bfl E ]> • b3b?254 QG^fiflBS GÖ3 « I I O T h M OTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information M TW 6N 60E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-M ode Silicon G ate

Contextual Info: MOTOROLA SC DIODES/OPTO 3TE T> S3 b3b7ESS 0GÖ3ÖS2 5 E3M0T7 MZP4728A thru MZP4764A, 1M110ZS5 thru 1M200ZS5 E L E C T R IC A L C H A R A C T E R IS T IC S Nominal Zener Voltage (T a = 25°C unless otherwise noted) Vp = 1.5 V Max, lF = 200 mA for all types

M 14606

Abstract: BZV55C6V1 MLL5221B mlu714 BZV55C4V3
Contextual Info: MOTOROLA sc DIODES/OPTO b4E » • b3L7ESS 00 8 54 37 S3T SECTION 4.2.4 DATA SHEETS ZËNER VOLTAGE REGULATOR DIODES — continued Section 4 .2 A 2 Surface Mounted — continued SECTION 4.2A 2.2 500 mW LEADLESS (DO-34 BODY SIZE) MULTIPLE PACKAGE QUANTITY (MPQ)

MTW54N05E

Abstract: Mott diode sc 3467
Contextual Info: MOTOROLA SC XSTRS/R F bfiE D • b3b72S4 OOSflflbl 17S ■MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TM O S E-FET P ow er Field E ffe c t Transistor M TW 54N 05E M o to ro la P re fe rre d D evice N-Channel Enhancem ent-M ode Silicon G ate

sc 1365

Abstract: 713 OPTO 1C962BHV 1C964BHV 1C973BHV 1C900 motorola 409
Contextual Info: MOTOROLA SC D I O D E S / O P T O 3^E D Ei b3k?2SS QQÖ2SHB R E3MOT 7 -r- ii- o r MOTOROLA SEMICONDUCTORi . .jljl. •- TECHNICAL DATA 1C746A-759AH V 1C962B-9928HV 1C4370A-4372AHV Processed per MIL-S-19500/127 Discrete Military Operation Silicon Zener Diode Chips

Zener diode 1n714

Abstract: 1N758A motorola 1N5837 1N5240 1N714 1N4740 1n4740 MOTOROLA 1C5230 zener diode 1N961 1N5985A
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTOJ 6367255 MOTOROLA SC »F|b3b7ESS 0030125 Q 34 c D IO D E S /O P TO 38125 7~' J j - O S SILICON ZENER DIODE DICE (continued) 1C5221 DIE NO. — SERIES LINE SOURCE — DZD300 This die provides performance equal to or better than that

1n53338

Abstract: 1N53348
Contextual Info: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

Contextual Info: LF PA K PSMN9R1-30YL N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 12 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN9R1-30YL

Contextual Info: LF PA K PSMN9R1-30YL N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

transistor motorola 2n2646

Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
Contextual Info: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:

1N53888

Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B
Contextual Info: MOTOROLA SC D I O D E S / O P T O 3TE D El b3L72S S 00Ö3ÖEM E3MOT7 MOTOROLA SEMICONDUCTOR c TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

mu4891

Abstract: MU4893 mu4894
Contextual Info: MOTOROLA SC DIODES/OPTO I 3<iE I> El b3b?2SS Ü0fl2'i0'î 1 BBF10T7 NOT RECOM M ENDED FO R NEW D ESIG N S I MU4891 thru MU4894 PN Unijunction Transistors Silicon Plastic Unijunction Transistors . . designed for m i l i t a r y and industrial use in pulse, timing, triggering, sensing,

Contextual Info: 6 3 6 7 2 54 MOTOROLA SC 96D 8 1 4 7 5 CXSTRS/R F — Tb M OTOROLA DE|b3Li7554 D D0S147S fl Order this data sheet b y MJ25BX100/D | S E M IC O N D U C T O R TECHNICAL DATA M J25BX100 NPN Silicon Power Transistor Module Energy M an age m e n t Series DUAL

mad1108P

Abstract: RC05 resistor 74HC125 dip RC05 RCO5 RESISTOR RC05 center tap transformer 18 0 18 74HC04 74HC04 NOT GATE datasheet 74HC04 equipment
Contextual Info: LXD332 — Evaluation Board for T1/E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document known as LXD332 — Evaluation Board for T1/E1 Applications. Order Number: 249220-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual