DIODE 9004 Search Results

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

Thyristor MCD

Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Contextual Info: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

105386

Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Contextual Info: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options

MDD 42-12-N1

Contextual Info: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms

1058760000

Abstract: 1011100000 1011180000 1011120000 9537550000 0338000000
Contextual Info: WTR 2.5 D WTR 2.5 Disconnect Terminals with 2 test sockets StB 2.3 with diode plug and with diode plug 2.3 test socket (StB) 9 / i \ 'A it Polarity base from view of closed side P lu g Lever Lever Polarity base from view of closed side P lu g Terminal Block Selection Data

10-5846

Contextual Info: WTR 2.5 Screw Clamp 35 mm DIN-Rail Terminals Disconnect WTR 2.5 D WTR 2.5 D WTR 2.5 with diode plug with StB without plug with diode plug and A mji JUi 2.3 test socket D im en sions W idth/Length/Height mm in. With TS 35 x 7.5 ^ With TS 32 c_j mm (in.) Insulation stripping length

Corning 7052

Contextual Info: Select Products Here Go DESCRIPTION TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode FEATURES The TOX 9004 is a GaAlAs emitter designed to emit near-infrared radiation when forward biased. ● Output spectrally, compatible with silicon sensors ●

TL190

Contextual Info: TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode DESCRIPTION FEATURES The TOX 9004 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. • • • • • Output spectrally compatible with silicon sensors Typical applications include card readers,

Contextual Info: TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode mm I lllll I W # l Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9004 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. • • • • • Output spectrally compatiblte with silicon

diode 9004

Abstract: TQX9004TX Corning 7052
Contextual Info: TE XAS OP TO EL EC TR ON IC S INC IDE D | 6^3=134 OOOOCHM fl | w/ / / / / mmW V i ff TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode Texas O p to e le ctro nics, Inc. DESCRIPTION FEATURES • The TOX 9004 is a GaAIAs emitter designed to em it near-infrared radiation when forward

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

92256

Abstract: 44750 7432 truth table 90087
Contextual Info: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs

diode nomenclature

Abstract: cehco 600v plating phase rectifier diagram 400 amp SCR used for welding rectifier CEHCO DIODES Holmes Co IR diode 94d diode R 107 diodes transformer ohmmeter circuit diagram ohmmeter circuit diagram
Contextual Info: 4537491 HOLMES CARL E CO 94D 00029 SECTION 1. COMPONENTS ^ Silicon Diode Rectifiers S TU D M O U N TE D D IO D E S POLARITY ANODE Rectifier diodes are used to convert alternating current into direct current. Silicon is the preferred material for rectifier diodes because of its efficiency

diode 9004

Abstract: RADIOTRON rca socket rca company 9004
Contextual Info: 9004 U-H-F DIODE ACORN TYPE H eater Coated U n ip o te n t ia l Cathode a -c o r d~c vol t s V o lt a g e 6 .3 amp. C u rre n t 0 .1 5 D ir e c t in t e r e le c t r o d e C a p a c it a n c e s :0 P la t e to Cathode 1.3 Mpf P la t e to H eater 0 .3 approx.

MDD 42-12-N1

Abstract: MDD 25-08 n1 mdd 42 mdd 90-04 DIODE REDRESSEMENT 12nl MDD165 mdd 42-08 ASEA abb diode MDD 65
Contextual Info: A S E A BROüJN/ABB A3 SENICOR Netz-Dioden-Module D I 004030a 00001ÖS T | Diode Modules for mains frequency D aten pro D io d e / d a ta p er d io d e /fe s ca ra cté ristiq u e s s e rap porten t à 1 d iod e V rhm If r m s 10 ms 8,3 m s Typ/type V A A

design a BCD counter using j-k flipflop

Abstract: TTL 9020 JK flipflop 9001 9020 ttl 9000 ttl internal diagram of jk flipflop 9022 9022 ttl 335 16 pin ttl 9022xc
Contextual Info: TTL/SSI • 9000 SER IES JK FLIP-FLO PS - 9000, 9001 DUAL JK FLIP-FLO PS - 9020, 9022 D E S C R IP T IO N — Th e T T L 90 00 series has four flip-flops to satisfy the storage requirements of a logic system . A ll are master/slave J K designs and have the same high speed and high noise im m unity as the rest of the 90 00 series. As w ith the gates, all inputs have diode clamps to reduce

MC1117

Abstract: MC1116 IVI01118 IVIC1116 IVIC111IV1C111T IVIC111S 100KC ScansUX1007 MC1118
Contextual Info: MOTOROLA B O X 9 5 5 • P H O E N I X 1. IV IC 11 1 6 A R I Z O N A IV IC 1 1 1 8 MULTI-DIODE GATES fo r COMPUTER MEMORY APPLICATIONS SILICON INTEGRATED CIRCUIT MEMORY DIODES • M e d iu m C u r r e n t R ange lF= 3 0 0 m A d c • H ig h -S p e e d R e c o v e ry T im e

Contextual Info: No. SP07-58-9004A Date June 23, 2008 SPECIFICATION FOR 8G Fibre Channel SFP+ Fiber Optic Transceiver HTR6932R-E Signed by T. Nojiri Manager, Optical Device Engineering Dept. Hitachi Cable, Ltd. BEFORE USE – GENERAL SAFETY INSTRUCTIONS This document contains important information for the customer to avoid personal injury, or property damage. Prior to use, read this

ZENER A16

Contextual Info: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier

foto transistor

Abstract: SFH905 p935 reflex 90041 Q62702-P1117 Q62703-P141
Contextual Info: SFH 900 SFH 900 feo06270 Miniatur-Reflexlichtschranken Miniature Light Reflection Switches Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Reflexlichtschranken für den Nahbereich ●

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SFH 910

Abstract: SFH 910 235 K SFH 910 foto transistor bar code phototransistor Q62702-P866 Q62902-B166 SLOTTED OPTICAL SWITCH 631 SFH910 SLOTTED OPTICAL SWITCH
Contextual Info: SFH 900 SFH 900 feo06270 Miniatur-Reflexlichtschranken Miniature Light Reflection Switches Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Reflexlichtschranken für den Nahbereich ●

Contextual Info: PD - 9.529B IRCZ44 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.028Ω ID = 50*A Description Third Generation HEXFETs from International Rectifier provide the designer with