mdd1655
Abstract: MDD165 MDD1655T 0342F
Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.
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MDD1655
MDD1655
MDD165
MDD1655T
0342F
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Untitled
Abstract: No abstract text available
Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 50A, 6.5mΩ General Description Features The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
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MDD1654
MDD1654
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MOSFET 719
Abstract: mdd1655 MDD165
Text: 30V N-channel Trench MOSFET : 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load Switching and
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MDD1655
MDD1655
MOSFET 719
MDD165
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mdd1655
Abstract: No abstract text available
Text: Single N-channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load
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MDD1655
100oC
MDD1655
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MDD1654
Abstract: mdd1654 MOSFET MDD*1654 MagnaChip Semiconductor Ltd. MDD1654 MDD1654R 30V 20A power p MOSFET MDD165 MagnaChip Semiconductor
Text: 30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ Features General Description The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and
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MDD1654
MDD1654
mdd1654 MOSFET
MDD*1654
MagnaChip Semiconductor Ltd. MDD1654
MDD1654R
30V 20A power p MOSFET
MDD165
MagnaChip Semiconductor
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MDD1654
Abstract: MDD*1654 mdd1654 MOSFET MagnaChip Semiconductor Ltd. MDD1654 MDD1654RH MDD165 30V 20A power p MOSFET TO 252 dimensions
Text: Single N-channel Trench MOSFET 30V, 55A, 6.0mΩ General Description Features The MDD1654 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load
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MDD1654
MDD1654
MDD*1654
mdd1654 MOSFET
MagnaChip Semiconductor Ltd. MDD1654
MDD1654RH
MDD165
30V 20A power p MOSFET
TO 252 dimensions
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MDD1653
Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state
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MDD1653
MDD1653
MDD*1653
mdd1653 MOSFET
MDD1653rh
MDD1653RP
MagnaChip Semiconductor Ltd. MDD1653
MagnaChip Semiconductor Ltd. MDD1653 rg
1E52
MDD165
MDD1653R
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mdd1653
Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching
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MDD1653
MDD1653
mdd1653 MOSFET
MagnaChip Semiconductor Ltd. MDD1653
MDD*1653
50a 30v 8.5m MOSFET
MDD1653R
30V 20A power p MOSFET
MagnaChip Semiconductor Ltd. MDD1653 rg
MDD1653T
MAGNACHIP
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MDS1653
Abstract: MDD*1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 mdS1653 MOSFET MDD1653R MDD165 MDD1653T 190NC
Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 55A, 8.5mΩ General Description Features The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.
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MDD1653
MDS1653
MDD1653
MDD*1653
mdd1653 MOSFET
MagnaChip Semiconductor Ltd. MDD1653
mdS1653 MOSFET
MDD1653R
MDD165
MDD1653T
190NC
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _POW ER_ _ _ _BE OCRS no \P J » I B THREE-PHASE I „ N=4 0 -1 2 0 A RECJTIEIER S.A. ROTATING / SILIC O N T C= 8 5°C REC TIFIER
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MDD76N
M5D76N
fCD76N
MDD86N
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MDD 42-12-N1
Abstract: MDD 25-08 n1 mdd 42 mdd 90-04 DIODE REDRESSEMENT 12nl MDD165 mdd 42-08 ASEA abb diode MDD 65
Text: A S E A BROüJN/ABB A3 SENICOR Netz-Dioden-Module D I 004030a 00001ÖS T | Diode Modules for mains frequency D aten pro D io d e / d a ta p er d io d e /fe s ca ra cté ristiq u e s s e rap porten t à 1 d iod e V rhm If r m s 10 ms 8,3 m s Typ/type V A A
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100-C
K21-0265
K21-0120
K21-0180
K21-0120'
MDD 42-12-N1
MDD 25-08 n1
mdd 42
mdd 90-04
DIODE REDRESSEMENT
12nl
MDD165
mdd 42-08
ASEA abb diode
MDD 65
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