DIODE 96 Search Results
DIODE 96 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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DIODE 96 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
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658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 | |
Contextual Info: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data |
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1N4148W-V-G AEC-Q101 2002/95/EC 2002/96/EC OD-123 18/10K 10K/box 08/3K 15K/box 1N4148W-V-G | |
kt7 diode
Abstract: BAV23C-V-G-08 SOT23 DIODE marking CODE AV BAV23C-V-G
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BAV23C-V-G 2002/95/EC 2002-96/EC GS18/10K 10K/box GS08/3K 15K/box BAV23C-V-G-18 BAV23C-V-G-08 kt7 diode BAV23C-V-G-08 SOT23 DIODE marking CODE AV BAV23C-V-G | |
Contextual Info: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data |
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1N4148W-V-G AEC-Q101 2002/95/EC 2002/96/EC OD-123 18/10K 10K/box 08/3K 15K/box 1N4148W-V-G | |
mmbd7000-v-gs08
Abstract: marking M5C
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MMBD7000-V AEC-Q101 2002/95/EC 2002/96/EC OT-23 MMBD7000-V MMBD7000-V-GS18 MMBD7000-V-GS08 2011/65/EU 2002/95/EC. marking M5C | |
marking m5c
Abstract: mmbd7000-v-gs08
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MMBD7000-V AEC-Q101 2002/95/EC 2002/96/EC OT-23 MMBD7000-V MMBD7000-V-GS18 MMBD7000-V-GS08 11-Mar-11 marking m5c | |
Contextual Info: BAW56-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAW56-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 18/10K 10K/box 08/3K 15K/box BAW56-V-G | |
Contextual Info: MMBD7000-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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MMBD7000-V AEC-Q101 2002/95/EC 2002/96/EC OT-23 MMBD7000-V MMBD7000-V-GS18 MMBD7000-V-GS08 11-Mar-11 | |
Contextual Info: BAW56-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAW56-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 18/10K 10K/box 08/3K 15K/box BAW56-V-G | |
Contextual Info: BAV23C-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAV23C-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10K 10K/box GS08/3K 15K/box BAV23C-V-G | |
Contextual Info: BAV23C-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAV23C-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10K 10K/box GS08/3K 15K/box BAV23C-V-G-18 | |
Contextual Info: BAV23C-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAV23C-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10K 10K/box GS08/3K 15K/box BAV23C-V-G | |
Contextual Info: BAW56-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAW56-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 18/10K 10K/box 08/3K 15K/box | |
1N4148W-V-G
Abstract: 1N4148 SOD-123 marking code 1200
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1N4148W-V-G 2002/95/EC 2002/96/EC OD-123 18/10K 10K/box 08/3K 15K/box 1N4148W-V-G-18 1N4148W-V-G-08 1N4148W-V-G 1N4148 SOD-123 marking code 1200 | |
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VISHAY SOT DATE CODE
Abstract: MMBD914-V
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MMBD914-V OT-23, AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 MMBD914-V MMBD914-V-GS18 VISHAY SOT DATE CODE | |
MMBD914-VContextual Info: MMBD914-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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MMBD914-V OT-23, AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 MMBD914-V MMBD914-V-GS18 | |
Contextual Info: MMBD7000-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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MMBD7000-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 MMBD7000-V-G MMBD7000-V-G-18 MMBD7000-V-G-08 2011/65/EU 2002/95/EC. | |
MMBD914-VContextual Info: MMBD914-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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MMBD914-V OT-23, AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 MMBD914-V-GS18 MMBD914-V-GS08 MMBD914-V | |
Contextual Info: MMBD7000-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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MMBD7000-V-G AEC-Q101 2002/95/EC 2002/96/EC OT-23 MMBD7000-V-G MMBD7000-V-G-18 MMBD7000-V-G-08 11-Mar-11 | |
VISHAY SOT23 DATE CODE
Abstract: VISHAY SOT DATE CODE MMBD914-V
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MMBD914-V OT-23, AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 MMBD914-V MMBD914-V-GS18 VISHAY SOT23 DATE CODE VISHAY SOT DATE CODE | |
C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
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EN935B SVC333 SVC333 SVC333] C10V C25V IN 4004 diode diode IN 4004 3662 diode | |
BAP51-02
Abstract: BP317
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M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 | |
109 DIODEContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. |
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M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE | |
diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
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MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606 |