DIODE AR S1 55 Search Results

diode AR S1 77

Abstract: z645
Contextual Info: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

M8500

Contextual Info: S T M8500 S amHop Microelectronics C orp. Arp,20 2005 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

Contextual Info: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

Contextual Info: S T M8500 S amHop Microelectronics C orp. Oct.06, 2004 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

Contextual Info: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V

SKM652

Abstract: SKM692F SKM682F
Contextual Info: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì

5L155

Contextual Info: SN55ALS056, SN55ALS057 TRAPEZOIDAL WAVEFORM INTERFACE BUS TRANSCEIVERS _ D 327S . APRIL 1 9 6 9 SUITABLE FOR IEEE STANDARD 8 9 6 APPLICATIONS* • S N 55A L S 05 6 Is an Octal Transceiver S N 55ALS0S6 . . J OR W PACKAGE TOP V IE W • S N 55A L S 05 7 Is a Quad Transceiver

P40N03

Abstract: p40n03l diode AR s1 47 P40N03L-20 n mosfet depletion pspice model parameters n mosfet pspice parameters depletion p mosfet n channel depletion MOSFET schematic diagram dc converter 72 v to 12 v STP40N03L-20
Contextual Info: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

D20N06

Abstract: TRANSISTOR SDM M6 SDM M6
Contextual Info: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

diode marking c34

Abstract: IRF4905L IRF4905S
Contextual Info: PD- 9.1478A International IQ R Rectifier IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S Low-profile through-hole (IRF4905L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V RüS(on) = 0.02Q

Contextual Info: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

AO4606

Contextual Info: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of

AO4627

Contextual Info: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Contextual Info: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

AO6604

Contextual Info: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO6602

Abstract: uis test
Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4618

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of