DIODE AR S1 86 Search Results

AO4838

Contextual Info: AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

sdm8401

Abstract: DM8401
Contextual Info: S DM8401 S amHop Microelectronics C orp. Augus t , 2002 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) TYP R DS (ON) ( m W ) V DS S

STM8405

Abstract: diode AR s1 56 diode AR S1 86 diode AR s1 8N
Contextual Info: S T M8405 S amHop Microelectronics C orp. Nov.23, 2004 ver 1.4 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A

diode AR S1 86

Abstract: EQUIVALENT STM8405 STM8405 M8405 diode AR s1 56
Contextual Info: S T M8405 S amHop Microelectronics C orp. MAY .04,2006 ver 1.5 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A

Contextual Info: S DM8401 S amHop Microelectronics C orp. J uly 23, 2004 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

AOD603A

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AN7421

Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
Contextual Info: National Semiconductor Application Note 742 Chai Vaidya IPG Applications January 1991 INTRODUCTION Today’s digital systems with their higher clock speeds and data throughput must have higher transfer rates to keep the processors running at top speed With these types of circuits it is essential to have high performance bus transceivers which tie together everything on the bus Without specialized bus interface transceivers board designers must

AO4619

Abstract: IF6 MOSFET
Contextual Info: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard

AO4619

Contextual Info: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. AO4619

ao4914

Contextual Info: AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous

Contextual Info: AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous

5L155

Contextual Info: SN55ALS056, SN55ALS057 TRAPEZOIDAL WAVEFORM INTERFACE BUS TRANSCEIVERS _ D 327S . APRIL 1 9 6 9 SUITABLE FOR IEEE STANDARD 8 9 6 APPLICATIONS* • S N 55A L S 05 6 Is an Octal Transceiver S N 55ALS0S6 . . J OR W PACKAGE TOP V IE W • S N 55A L S 05 7 Is a Quad Transceiver

tr1pbf

Contextual Info: PD - 97315A IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

Contextual Info: PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

Contextual Info: PD - 97315B IRF6720S2TRPbF IRF6720S2TR1PbF DirectFET™ Power MOSFET ‚ l RoHS Compliant and Halogen Free  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS l Dual Sided Cooling Compatible  VGS RDS(on) RDS(on) l Ultra Low Package Inductance

transistor b528

Abstract: M68HC11 M68HC12 M68HC12A4EVB MC68HC12 MC68HC812A4 F26FB mdw 45 mc68hc908 32 dip pin assignment
Contextual Info: Freescale Semiconductor, Inc. M68HC12A4EVBUM/D October 1999 Freescale Semiconductor, Inc. M68HC12A4EVB EVALUATION BOARD OR, USER’S MANUAL UCT CH R A ED V I BY EE R F LE A SC S N O IC M E D For More Information On This Product, Go to: www.freescale.com

diode marking c34

Abstract: IRF4905L IRF4905S
Contextual Info: PD- 9.1478A International IQ R Rectifier IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S Low-profile through-hole (IRF4905L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V RüS(on) = 0.02Q

Contextual Info: f Z 7 S G S -T H O M S O N Ä 7 # 5 aJOT ßDD gt M74HC181 ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR • HIGH SPEED tP D = 13 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 (jA (MAX.) at TA = 25 "C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)

4741d

Abstract: MIC342 BC177 BC556 SD103A T4090B-PC U4090B-P U4090B-PFNG3Y 474-1D VMPC7
Contextual Info: Features • DC Characteristic Adjustable • Transmit and Receive Gain Adjustable • Symmetrical Input of Microphone Amplifier • Anti-clipping in Transmit Direction • Automatic Line-loss Compensation • Symmetrical Output of Earpiece Amplifier • Built-in Ear Protection

tl 494 convertor

Abstract: TDA1545A
Contextual Info: P h ilip s S e m ic o n d u c to r s L in e a r P ro d u c ts P r e lim in a r y s p e c ific a tio n Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package SOS or DIL8 The TDA1545A is the first device of a new generation of

sick weu 26-710

Abstract: WEU 26-730 pnoz 8 SAFETY AT 1 11 SICK OPTIC ELECTRONIC PILZ pnoz x11 26732 SICK D-79183 ka 2131 sick optic old to new sick
Contextual Info: T E C H N I C A L D E S C R I P T I O N WSU 26/2 – WEU 26/2 Photoelectric Safety Switch ‡ EASY INSTALLATION † ‡ UNIVERSAL USABILITY† ‡ SOLID CONSTRUCTION † SICK WSU 26/2 – WEU 26/2 Contents 1 General Introduction 2 Device/System Construction

FEI Microwave

Abstract: step recovery diode step recovery diode application A4S112 "step recovery diode" 1.7 pf A4S021 fei microwave diodes A4S180 A4S360 A4S370
Contextual Info: FREQUENCY E L E K S / F E I Hlil 13E D | 3731M5ti □ Q 0 0 0 S C1 û I Step necovery Diodes Step Recovery Diode Product Information S te p re cove ry d io d e s are ge n e rally used fo r fre­ q u e n c y m u ltip lic a tio n in phase locked loops, local

UFN 432

Abstract: 74AHCT
Contextual Info: Zvtrex ZX54AHCT ZX74AHCT OBJECTIVE SPECIFICATIONS Features Description • Multiplexed I/O ports provides improved bit density These eight-bit universal registers feature multiplexed I/O ports to achieve full eight-bit data handling. Two function-select inputs and two output-control Inputs can