DIODE B17 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: DIODE ISOLATED MOLD TYPE (F.R.D.) DG20AA-M DG20AA-M is a medium power isolated mould diode suitable for wide range of industrial and home electronics use. DG20AA-M is highly reliable by glass passivation. • High Speed Diode • If(av) = 20A • Tab terminals for easy wiring.

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: DISC T Y P E DIODE SDF4000BA SD F4000BA rectification. is a Flat Pack Diode designed for high power • If av>— 4000A, Vrrm— 1200V • High Reliability by pressure mount construction. (Applications • High Power Rectifier • Welding Power Supply • Maximum Ratings

Contextual Info: DISC TYPE DIODE SDF400QAA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, Vrrm= 600V • High Reliability by pressure mount construction. (Applications) • High Power Rectifier • Welding Power Supply • Rectifier for metal surface treatment

Contextual Info: DIODE I S O L A T E D DG20AA M O LD T Y P E D G 2 0 A A is a medium power isolated mould diode suitable for wide range of industrial and home electronics use. D G 2 0 A A is highly reliable by glass pasivation. I f{avi= 20A, Vrrm= 1600V • Tab terminals for easy wiring.

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

IDTQS32XVH384

Abstract: QS32XVH384
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS32XVH384

Abstract: QS32XVH384
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS34XVH245

Abstract: QS34XVH245
Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

QS32XL2384

Abstract: QS32XL384
Contextual Info: QS32XL384, QS32XL2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switches QS32XL384 QS32XL2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

QS32X2384

Abstract: QS32X384 32x384
Contextual Info: QS32X384, QS32X2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switch QS32X384 QS32X2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

QS32XR384

Abstract: B10-B14
Contextual Info: QS32XR384 QuickSwitch Products High-Speed CMOS 20-Bit Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32XR384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

Contextual Info: IDTQS3VH16862 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16862 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

IDTQS3VH16862

Abstract: QS3VH16862
Contextual Info: IDTQS3VH16862 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH IDTQS3VH16862 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc