DIODE B19 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: A dvanced P o w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D20B 200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Q62702-B195

Contextual Info: Silicon Tuning Varactor BBY 35 F ● Hyperabrupt junction tuning diode ● Frequency linear tuning range 4 … 12 V ● High figure of merit Type Marking Ordering Code Pin Configuration Package1 BBY 35 F – Q62702-B195 Cathode: black dot, heat sink T1 Maximum Ratings

Contextual Info: SIEM ENS Silicon Tuning Varactors BBY 34 C BBY 34 D • Hyperabrupt junction tuning diode • Frequency linear tuning range 4 . 12 V • High figure of merit Type Marking Ordering Code BBY 34 C - Q62702-B257 BBY 34 D Pin Configuration Package1’ D ° Q62702-B194

Q62702-B194

Abstract: Q62702-B257
Contextual Info: Silicon Tuning Varactors BBY 34 C BBY 34 D ● Hyperabrupt junction tuning diode ● Frequency linear tuning range 4 … 12 V ● High figure of merit Type Marking Ordering Code BBY 34 C – Q62702-B257 BBY 34 D Pin Configuration Package1 D Q62702-B194 Maximum Ratings

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

IDTQS32XVH384

Abstract: QS32XVH384
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS32XVH384

Abstract: QS32XVH384
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS34XVH245

Abstract: QS34XVH245
Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS32XVH384

Abstract: QS32XVH384 SO484
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH IDTQS32XVH384 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

b1c DIODE schottky

Abstract: B1C ON SEMICONDUCTOR b1c diode SBRS81100T3G marking code B1C Diode SBRS81100 MBRS1100T3G marking code B19 Diode SBRS8190T3G diode b1c
Contextual Info: MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Preferred Devices Schottky Power Rectifier http://onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art

QS32XL2384

Abstract: QS32XL384
Contextual Info: QS32XL384, QS32XL2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switches QS32XL384 QS32XL2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

diode b1c

Contextual Info: MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Preferred Devices Schottky Power Rectifier http://onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

QS32X2384

Abstract: QS32X384 32x384
Contextual Info: QS32X384, QS32X2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switch QS32X384 QS32X2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

QS32XR384

Abstract: B10-B14
Contextual Info: QS32XR384 QuickSwitch Products High-Speed CMOS 20-Bit Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32XR384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs