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Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B2020 Green Products Technical Data Data Sheet N1258, Rev. - SDUR/B2020 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode
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SDUR/B2020
N1258,
SDUR/B2020
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diode
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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diode
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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IR module
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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DD400S17K6CB2
IR module
DD400S17K6CB2
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diode 1700v
Abstract: eupec igbt DIODE i2t DD400S17K6CB2 b2 diode DIODE B2 igbtmodules emcon diode
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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DD200GB40
Abstract: DD200GB80
Text: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
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DD200GB
E76102
DD200GB
42max
34max
05C/W
DD200GB40
DD200GB80
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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DD200GB40
Abstract: DD200GB80 sanrex
Text: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
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DD200GB
E76102
DD200GB
42max
34max
05C/W
DD200GB40
DD200GB80
sanrex
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Untitled
Abstract: No abstract text available
Text: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission
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b427555
0G37b3S
NDL5102C
NDL5102C
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b S B T B l 0 02 b2 fi4 03S W A P X Product specification BAT85 Schottky barrier diode N AMER PHILIPS/DISCRETE DESCRIPTION A Schottky barrier diode with an integrated protection ring against static discharges. This diode, in a SOD68 DO-34 envelope, is
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BAT85
DO-34)
bb53T31
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Thyristor MCD
Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Text: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-0180
K41-0150
K41-0150
Thyristor MCD
mdc 90-12
ABB thyristor modules
90-08io8
DIODE REDRESSEMENT
mcd 132
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LD-7733
Abstract: LD234 IEI-1209 NEC LASER DIODE butterfly package
Text: N E C b2E D ELECTRONICS INC • b l427S2S OOBflDbS 217 * N E C E PRELIMINARY DATA SHEET LASER DIODE NDL7537P 1 480 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE MODULE DESCRIPTION NDL7537P is a 1 480 nm pumping laser diode module w ith optical isolator for an Er-doped optical fiber
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427S2S
NDL7537P
NDL7537P
b427525
L7537P
LD-7733
LD234
IEI-1209
NEC LASER DIODE butterfly package
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C 33725
Abstract: 7DFL
Text: b2E D • NEC bM2752S DG37blD 7Dfl H N E C E ELECTRONICS INC LASER DIODE M ODULE NDL5605P 1 310nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5605P is a 1 310 nm DFB Distributed Feed-Back laser diode B utterfly package module w ith optical isolator. It in
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bM2752S
DG37blD
NDL5605P
310nm
NDL5605P
b427525
C 33725
7DFL
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nec d 1590
Abstract: code diode b2e L7561 NDL7561P1 diode so3 NDL7561P
Text: N E C ELECTRONICS INC b2E D • bH27SSS □OBÏRÔS b47 INECE PRELIMINARY DATA SHEET LASER DIODE MODULE N D L7561P, NDL7561P1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION N DL7561P and NDL7561P1 are 1 550 rim new ly developed Multiple Quantum W ell MQW structure pulsed laser diode
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bH27SSS
L7561P,
NDL7561P1
DL7561P
NDL7561P1
b457525
NDL7101
NDL7111
NDL7500P
NDL7510P
nec d 1590
code diode b2e
L7561
diode so3
NDL7561P
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