DIODE B2X Search Results

B2X84C5V1

Abstract: B2X84C4V3 zener diode Marking code v3 Zener diode wz 210 BZX64 diode ZENER Y6 marking BZX64C3V0 Y6 ZENER DIODE Zener diode wz 130 BZX84C47
Contextual Info: Central" BZX84C2V4 THRU BZX84C47 Semiconductor Corp. 350mW ZENER DIODE 2.4 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR BZX84C2V4 Series Silicon Zener Diode is a high quality volt­ age regulator for use in industrial, commercial, entertainment and computer applications.

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

QCA200AA120

Contextual Info: TRANSISTOR MODULE QCA200AA120 UL;E76102 （M） QCA200AA120 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

Diode B2x

Abstract: QCA200AA100
Contextual Info: TRANSISTOR MODULE QCA200AA100 UL;E76102 （M） QCA200AA100 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

QCA200AA100

Contextual Info: TRANSISTOR MODULE QCA200AA100 UL;E76102 （M） QCA200AA100 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

QCA200AA120

Abstract: C1527
Contextual Info: TRANSISTOR MODULE QCA200AA120 UL;E76102 （M） QCA200AA120 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

Contextual Info: MBRS230L – MBRS2100L 2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features        Very Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak

QCA300BA60

Abstract: 675g M6 transistor
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

IC-100A

Abstract: QCA100BA60 hFE-750
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA150BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA100BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA150BA60

Abstract: FB370
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA300BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

Q62702-Z686

Abstract: z682 Z848 z688 bzx c36 Q62702-Z683 Q62702-Z851 Q62702-Z693 z850 Q62702-Z692
Contextual Info: BZX55 Silicon planar Z-Diode BZX 55 is a silicon planar Z -d io d e in a glass-case 51 A 2 DIN 418 8 0 D O -7 , for stabilizing and lim itin g voltages as w e ll as fo r generating reference voltages at low pow er requirements. The planar technique ensures a very lo w reverse current level,

QCA200A60

Abstract: OCA200 QCA200A40 AMP110 QCA200A-60
Contextual Info: TRANSISTOR MODULE QCA200A40/60 UL;E76102 （M） 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application

QCA200A60

Abstract: OCA200 QCA200A40 AMP110
Contextual Info: TRANSISTOR MODULE QCA200A40/60 UL;E76102 （M） 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application

DIODE B2

Abstract: QBB150A60 QCA150A60 QBB150A40 QCA150A QCA150A40 M5C1
Contextual Info: TRANSISTOR MODULE QCA150A/QBB150A40/60 UL;E76102 （M） 10.5 B2X B2 C2E1 NAME PLATE 5.0 E2 B1 C1 25.5 26.5 33.5max 4-φ5.4 QBB E2 40.0 52.0±0.2 68.0max B2 （1.5） 3.4 E2 E1 C2 B1 21 30max QCA （Applications） Motor Control（VVVF） , AC/DC Servo, UPS,

diode b2

Abstract: TRANSISTOR 158 QBB150A40 QBB150A60 QCA150A QCA150A40 QCA150A60
Contextual Info: TRANSISTOR MODULE QCA150A/QBB150A40/60 UL;E76102 （M） 10.5 B2X B2 C2E1 NAME PLATE 5.0 E2 B1 C1 25.5 26.5 33.5max 4-φ5.4 QBB E2 40.0 52.0±0.2 68.0max B2 （1.5） 3.4 E2 E1 C2 B1 21 30max QCA （Applications） Motor Control（VVVF） , AC/DC Servo, UPS,

B2X55C

Abstract: B2X55 B2X55-C10 BZX55C4 BZX55C13
Contextual Info: Zener Diodes BZX55 Series 500 mW Zener Diodes DO-35 Glass Package TA = 25 °C Type BZX55-C0V8) BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 B2X55-C10

IKCS17F60B2A

Abstract: b2xseries IKCS22F60B2C IKCS22F60F2C DIODE b2x IKCS22F60F2A IKCS08F60F2A IKCS08F60F2C IKCS12F60F2A IKCS17F60
Contextual Info: Application Note, V1.2, Nov. 2008 AN-Cipos-5 Control integrated Power System CIPOS Application Aspects of CIPOS™ B2x- and F2x-series CIPOS™ Authors: Wolfgang Frank http://www.infineon.com/cipos Power Management & Drives Control integrated Power System CIPOS™

C5VI ezx79

Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
Contextual Info: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener

ZLDQ250A

Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Contextual Info: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

transistor eb 2030

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type