DIODE B60 Search Results

B60C-806-01

Abstract: bookham diode 60W
Contextual Info: Data sheet 60W 806nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 60W operating power B60C-806-01 • Highly reliable single quantum well MBE structure The Bookham Technology B60C-806-01 bare laser diode bar series has been designed to provide the

C1060

Abstract: bookham diode 2 Wavelength Laser Diode C1060 Series b60c Nd-yag B60C-1060-01 emitter "1060 nm"
Contextual Info: Data Sheet Preliminary 60W 10xxnm High Power Bare Laser Diode Bar B60C-10xx-01 The Bookham B60C-10xx-01 50% fill factor laser diode bar has been designed to provide the increased brightness and reliability required for direct diode applications and as replacement for Nd:YAG lasers. The proprietary E2 front mirror

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

HFA08TB60S

Abstract: IRFP250 Ultrafast Recovery diode 18ns
Contextual Info: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA08TB60S

Abstract: IRFP250
Contextual Info: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

diode marking 515

Abstract: CT28 Q62702-B607 DIODE Q marking
Contextual Info: Silicon Variable Capacitance Diode ● For UHF and VHF TV/VTR tuners ● Large capacitance ratio ● Low series resistance BB 515 Type Ordering Code tape and reel Pin Configuration 1 2 Marking Package BB 515 Q62702-B607 C white S SOD-123 A Maximum Ratings

S 187 Siemens

Abstract: MARKING CODE 515 diode marking 515 DIODE T28
Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking Package white S SOD-123 Maximum Ratings

Contextual Info: SIEM ENS • û2 3S bDS 000^434 'îflO Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking

k 2996

Abstract: LTC1077 D2996 LTC2997 LTC2996IDD power supply 220v- 12v circuit diagram ut 0712 B6015L
Contextual Info: LTC2996 Temperature Sensor with Alert Outputs Features Description Converts Remote or Internal Diode Temperature to Analog Voltage n Adjustable Overtemperature and Undertemperature Thresholds n Voltage Output Proportional to Temperature n ±1°C Remote Temperature Accuracy

Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —

Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —

Diode B60

Abstract: an8523S AN8523 DN6851 A b5 diode AN85-23 dn8899u
Contextual Info: Bipolar Digital ICs • Driver Arrays -Input Resistor 0 Function Type No. Output Breakdown Voltage VcE(SUS) Output Current (mA) Output Clamp Diode Numbers of Circuits Package No. (V) DN8650 "L ” input active driver (Emitter common) USTTL Compatible

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

MBRP60035CTL

Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free

Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free

B60S

Abstract: HFA04TB60S IRFP250
Contextual Info: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC

B60S

Abstract: HFA04TB60S IRFP250 94036
Contextual Info: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC

Contextual Info: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC

HFA15TB60S

Abstract: IRFP250
Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free

HFA25TB60S

Abstract: IRFP250
Contextual Info: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC