RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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BBY58-02L
Abstract: DIODE T6 marking DIODE B6S marking G SOT323 Transistor BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-02L
BBY58-02V
BBY58-02L
DIODE T6 marking
DIODE B6S
marking G SOT323 Transistor
BBY58
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
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marking code 62 3 pin diode
Abstract: sot323 marking code A.C diode marking code 88 MARK A SCD80
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
BBY58-02L*
BBY58-02V
marking code 62 3 pin diode
sot323 marking code A.C
diode marking code 88
MARK A SCD80
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DIODE B6S
Abstract: v sot323 BBY58-02W 88 BBY58 BBY58-02L BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
Text: BBY58. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-02L*
BBY58-02V
DIODE B6S
v sot323
BBY58-02W 88
BBY58
BBY58-02L
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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TSLP
Abstract: *T4 MARKING pin diode marking b8
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
BBY58-02L
BBY58-02V
TSLP
*T4 MARKING
pin diode marking b8
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LL5817
Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time
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C3B03
LL5817
smd ss12
DIODE SS34
LL5818
LL5819
SS13
SS14
SS15
SS16
SS19
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Infineon Technologies Silicon Tuning Diode
Abstract: No abstract text available
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
BBY58-02L*
BBY58-02V
Infineon Technologies Silicon Tuning Diode
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smd Marking OU
Abstract: B05S-G B05S smd marking NE B10S B10SG
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
smd Marking OU
B05S
smd marking NE
B10S
B10SG
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BBY58-02L
Abstract: BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4 SC79 SCD80
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-02L*
BBY58-02V
BBY58-02L
BBY58
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
SC79
SCD80
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Untitled
Abstract: No abstract text available
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-02L
BBY58-02V
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)
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B05S-G
B10S-G
125grams.
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
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Untitled
Abstract: No abstract text available
Text: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing
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B05S-G
B10S-G
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
00MAX
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|
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Untitled
Abstract: No abstract text available
Text: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing
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B05S-G
B10S-G
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
00MAX
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general purpose bridge rectifier
Abstract: comchip rectifier bridge low smd diode bridge
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.
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B05S-HF
B10S-HF
125grams.
QW-JBR03
82MIN
55REF
92MIN
00MAX
032MIN
100REF
general purpose bridge rectifier
comchip rectifier bridge low
smd diode bridge
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B01S-G
B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
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DIODE B6S
Abstract: B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B
Text: B2S, B4S & B6S New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020C,
2002/95/EC
2002/96/EC
O-269AA
08-Apr-05
DIODE B6S
B6S Bridge rectifier
DIODE MARKING B4
TO-269AA
diode marking b2
JESD22-B102D
J-STD-002B
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diode b2s
Abstract: DIODE B6S
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
08-Apr-05
diode b2s
DIODE B6S
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DIODE B6S
Abstract: diode b2s diode marking b2 JESD22-B102 J-STD-002 B6S Bridge rectifier
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
200lectual
18-Jul-08
DIODE B6S
diode b2s
diode marking b2
JESD22-B102
J-STD-002
B6S Bridge rectifier
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Untitled
Abstract: No abstract text available
Text: B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Saves space on printed circuit boards ~ • Ideal for automated placement
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E54214
J-STD-020,
O-269AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DIODE B6S
Abstract: B6S Bridge rectifier TO-269AA MBS JESD22-B102 J-STD-002 general purpose bridge rectifier by using diode diode b2s
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
11-Mar-11
DIODE B6S
B6S Bridge rectifier
TO-269AA MBS
JESD22-B102
J-STD-002
general purpose bridge rectifier by using diode
diode b2s
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Untitled
Abstract: No abstract text available
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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philips tv smps
Abstract: BUK454-500B T0220AB
Text: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0030b25
BUK454-500B
T0220AB
BUK454-500B
philips tv smps
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