DIODE BA 244 Search Results

diode 244

Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Contextual Info: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD

DIODE BA243

Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Contextual Info: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance

Contextual Info: 0 S HI BA LASER/FBR OP T I C G1 J> m ^0*17255 D ü l b l l ö 7 • T O Sb 13 T - 4T -°7 TOSHIBA FOR OPTICAL COMMUNICATIONS Laser Diode Modules for Optical Communications TOLD320 TOLD322 TOLD32Q/322 / Applications Features •Light source for optical subscriber loops

ba 243 rf

Abstract: BA244 BA243 diode 244 ba capacitance diode ba rf JEDEC to 243
Contextual Info: «H» BA 243 •BA 244 'W Silizium-Planar-Dioden Silicon planar diodes Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Besondere Merkmale: Features: • Niedriger differentieller Durchlaßwiderstand im VHF-Bereich • Low differential forward resistance in

BA244

Abstract: BA243 diode 243 diode 244 DIODE BA243 BA diode ba 243 rf Q62702-A4
Contextual Info: SIEM ENS BA 243 BA 244 Silicon RF Switching Diodes • For VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration BA 243 yellow Q62702-A521 Q62702-A421 BA 244 ¿ Kl 1 Package1 o DO-35 DHD EHA07001 Maximum Ratings

BA244

Abstract: BA243 marking S26 sot 23
Contextual Info: TELEFUNKEN ELECTRONIC 1?E D • â^200^b 0001715 BA 243 • BA 244 ■¡miUIFiamiiKÌ e le c tro n ic 1 WÊMGG C re ativ e T ec h n o lo g ie s T - 0 7 - / r Silicon Flanar Diodes Applications: Band selector in VHF-tuners Features: • Low differential forward

BA389 PIN Diode

Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Contextual Info: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

BA163

Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Contextual Info: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre­ quency range in short-wave, medium-wave, and long-w ave circu its Type

diode ba 241

Abstract: SOT-23 J
Contextual Info: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: TC74ACT240P/F/FW, TC74ACT241P/F/FW, TC74ACT244P/F/FW O C T A L BUS B U F F E R INVERTED, 3-8T A T E OUTPUTS NOW-INVERTED, 3-ST A TE OUTPUTS N O N —I N V E R T E D . 3 - 8 T A T E O U T P U T 8 TC74ACT240P/F/FW TC74ACT241 P / F / F W TC74ACT244P/F/FW The TC74ACT240, 241 and 244 are advanced high speed

IRF7311

Abstract: IRF7101 DIODE smd marking 82a
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

Contextual Info: GTLP16612A

st zd 125

Abstract: aj7 mosfet NC2030
Contextual Info: PD-91866 International IQR Rectifier • • • • • • IRF7663 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel V dss = -2 0 V R üS (on) = 0.020Q

GTLP16612A

Abstract: GTLP16612AA
Contextual Info: GTLP16612A

GTLP16612A

Abstract: GTLP16612AA 18bit TTL
Contextual Info: GTLP16612A

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

mikroelektronik Heft 12

Abstract: Mikroelektronik Information Applikation information applikation mikroelektronik information applikation applikation heft A302D Kombinat VEB A 902 Kombinat VEB A 281 mikroelektronik Heft VEB mikroelektronik
Contextual Info: m a tk a r ^ m ie le l- c te n o n ik Information Applikation Informations- und Applikationshefte „M IK R O E L E K T R O N IK " Bisher erschienen: Heft Heft Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: 8: 9: A 210 und 211 A301 A 290 A202 A 244 und A 281

MC14506

Abstract: MC14506UB "MOTOROLA CMOS LOGIC DATA" db12cb
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14506UB Dual 2-Wide, 2-Input Expandable AND-OR-INVERT L SUFFIX CERAMIC CASE 620 Gate The MC14506UB is an expandable AND–OR–INVERT gate with inhibit and 3–state output. The expand option allows cascading with any other gate,

Contextual Info: PD-91844A International ie R Rectifier IRF7210 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount Available in Tape & Reel V Ds s = -12V RüS on = 0.007Q. Description These P-Channel MOSFETs from International Rectifier

philco transistors

Abstract: ECG77 dioda zener 39 ECG779A
Contextual Info: PHILIPS E C G INC 17E D S bbSBTSfl 00 034b2 4 T -7 7 -0 7 -0 5 ECG779A TV SIGNAL PROCESS semiconductors v io io in pu t Q ADJ. N C G .t .F . AGC C AGC M f. Q ECG779A 13 a monolithic TV circuit with sync separator, advanced noise Inversion, AGO comparator, and versatile R F AG C