DIODE BA 398 Search Results

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft

IRF7521D1

Abstract: ba 7321
Contextual Info: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

IRF7524D1

Contextual Info: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V

IRF7506

Abstract: marking code EA SMD MOSFET
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

IRF7506

Contextual Info: PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2

IRF7311

Abstract: IRF7101 DIODE smd marking 82a
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

IRF7101

Abstract: IRF7421D1 diode schottky 117c
Contextual Info: PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode 1 8 2 7 3 6 4 5 A A D VDSS = 30V D

diode schottky 117c

Abstract: IRF7101 IRF7421D1
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode

st zd 125

Abstract: aj7 mosfet NC2030
Contextual Info: PD-91866 International IQR Rectifier • • • • • • IRF7663 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel V dss = -2 0 V R üS (on) = 0.020Q

817 BN

Contextual Info: IN TE G R A TE D CIRCUITS [nlEET 74LVC646A Octal buffer transceiver/register; 3-state P roduct specification File under Integrated C ircuits, IC24 Philips Semiconductors 1998 M ar 25 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification Octal buffer transceiver/register; 3-state

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 28 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40W series PINNING • Low forw ard voltage BAS40

Contextual Info: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V

ps70sb

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 28 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS70SB40 series PINNING • Low forw ard voltage

Contextual Info: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche

AT120A

Contextual Info: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes

1PS70SB10

Abstract: 1PS70SB14 1PS70SB15 1PS70SB16
Contextual Info: DISCRETE SEMICONDUCTORS PÆm StiEiT 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16 Schottky barrier double diodes Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16

Datasheet for IRLML2502

Abstract: application IRLML2502 irlml2502 for IRLML2502 ET 439 IRLML2502 G EIA-541 Y1 SOT-23
Contextual Info: PD - 93757B IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier

IRLML6401 SOT-23

Abstract: EIA-541 IRLML6401 marking SH SOT23 mosfet
Contextual Info: PD- 93756B IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier

10mhz mosfet

Abstract: IRF7534D1 3A 300V Schottky Diode
Contextual Info: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5

ir*526

Abstract: HEXFET SO-8 IRF7526D1
Contextual Info: PD -91649B IRF7526D1 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -30V

Contextual Info: PD-91844A International ie R Rectifier IRF7210 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount Available in Tape & Reel V Ds s = -12V RüS on = 0.007Q. Description These P-Channel MOSFETs from International Rectifier

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS79SB40 Schottky barrier diode Product specification Supersedes data of 1999 Mar 08 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES