BAT85
Abstract: No abstract text available
Text: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type
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BAT85
BAS85.
DO-35
300us,
100mA
BAT85
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Untitled
Abstract: No abstract text available
Text: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type
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BAT85
BAS85.
DO-35
300us,
100mA
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S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
OD882
MDB391
SCA75
613514/01/pp8
S3 DIODE schottky
SOD882
S3 marking DIODE
BAT54L
Marking s3 Schottky barrier
Marking "s3" Schottky barrier
MARKING C SOD882
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diode A157
Abstract: BAT86
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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BAT86
DO-34
C-120
BAT86Rev100506E
diode A157
BAT86
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
OD882
MDB391
613514/01/pp7
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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BAT86
DO-34
C-120
BAT86Rev100506E
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BAT41
Abstract: LL41
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
BAT41
LL41
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bat85
Abstract: BAT85 marking
Text: BAT85 Schottky barrier single diode 24 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode
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BAT85
DO-34)
bat85
BAT85 marking
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DIODE 914
Abstract: eeds Low Leakage Diode SMD Diode 631
Text: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode
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OD-523
OT-563
OD-323
OT-363
OT-23
OT-26
DIODE 914
eeds
Low Leakage Diode
SMD Diode 631
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S3 marking DIODE
Abstract: BAT54L S3 DIODE schottky MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
OD882
MDB391
613514/01/pp7
S3 marking DIODE
BAT54L
S3 DIODE schottky
MARKING C SOD882
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Untitled
Abstract: No abstract text available
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
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MARKING C SOD882
Abstract: nxp Standard Marking
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
MDB391
BAT54L
OD882
613514/01/pp7
771-BAT54L-T/R
MARKING C SOD882
nxp Standard Marking
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DIODE BAT86 replacement
Abstract: bat86
Text: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode
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BAT86
DO-34)
DIODE BAT86 replacement
bat86
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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Untitled
Abstract: No abstract text available
Text: BAT63. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • For high-speed applications • Zero bias detector diode • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT63-02V BAT63-07W " ! , ,
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BAT63.
BAT63-02V
BAT63-07W
BAT63-02V*
OT343
BAT63-02V
BAT63-07W
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BAT63-02V
Abstract: BAT63-07W BAR63-02V BAT63 BGA420 SC75 SC79 SCD80
Text: BAT63. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • For high-speed applications • Zero bias detector diode • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT63-02V BAT63-07W " ! , ,
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BAT63.
BAT63-02V
BAT63-07W
OT343
BAT63-0y
BAT63-02V
BAT63-07W
BAR63-02V
BAT63
BGA420
SC75
SC79
SCD80
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"Power Diode"
Abstract: power diode
Text: ESAL01 2x150A POWER DIODE MODULE Outline Drawings, mm 100V,200V / 150A 2 in one-package POWER DIODE MODULE Features • Glass Passivation Chip · Variety Connection Menu · Non-Insulated Type Applications · Battery Chargers · Free-Wheeling Diode · General Purpose Rectifiers
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ESAL01
2x150A)
50/60Hz
"Power Diode"
power diode
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"Power Diode"
Abstract: 2x100A power diode
Text: ESAH01 2x100A POWER DIODE MODULE Outline Drawings, mm 100V,200V / 100A 2 in one-package POWER DIODE MODULE Features • Glass Passivation Chip · Variety Connection Menu · Non-Insulated Type Applications · Battery Chargers · Free-Wheeling Diode · General Purpose Rectifiers
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ESAH01
2x100A)
50/60Hz
"Power Diode"
2x100A
power diode
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"Power Diode"
Abstract: power diode 2x50a
Text: ESAG01 2x50A POWER DIODE MODULE Outline Drawings, mm 100V,200V / 50A 2 in one-package POWER DIODE MODULE Features • Glass Passivation Chip · Variety Connection Menu · Non-Insulated Type Applications · Battery Chargers · Free-Wheeling Diode · General Purpose Rectifiers
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ESAG01
2x50A)
50/60Hz
"Power Diode"
power diode
2x50a
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Untitled
Abstract: No abstract text available
Text: BAT63. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • For high-speed applications • Zero bias detector diode • Pb-free RoHS compliant package BAT63-02V BAT63-07W " ! , , ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BAT63.
BAT63-02V
BAT63-07W
OT343
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BAT63-07W
Abstract: BAT63-07WE6811 bat63
Text: BAT63-07WE6811 Silicon Schottky Diode Low barrie diode for detectors up to GHz frequencies For high-speed switching applications Zero bias detector diode BAT63-07W 4 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT63-07WE6811
BAT63-07W
OT343
Jul-24-2002
BAT63-07W
BAT63-07WE6811
bat63
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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Untitled
Abstract: No abstract text available
Text: BAT54 SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode with an integrated p-n junction protection ring in a micro miniature SOT-23 envelope intended for surface mounting. The diode features especially a low forward voltage. QUICK REFERENCE DATA
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BAT54
OT-23
OT-23
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DAF41
Abstract: nf schaltungen
Text: PHILIPS Id â R ï DIODE-PENTODE for use as A.F. amplifier in battery receivers DIODE-PENTHODE pour utilisation en amplificatrice B.F. dans des appareils-batterie DIODE-PENTODE zur Verwendung als NF-Verstärker Batteriegeräten Heating : direct by D.C. series or parallel supply
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10Veff)
DAF41
nf schaltungen
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