DIODE BAX Search Results

BAX12 equivalent

Abstract: BAX12 DO35 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BAX12

Abstract: DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12

avalanche diode

Abstract: BAX12 DO35 MAM246 bax12 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BAX14

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES

BAX14

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES

BAX18

Abstract: BAX18 equivalent MAM246 GENERAL PURPOSE DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES

BAX18 equivalent

Abstract: BAX18 MAM246 general purpose diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 18 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES

BAX18 equivalent

Abstract: BAX18 M3D176 MAM246 GENERAL PURPOSE DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES DESCRIPTION • Hermetically sealed leaded glass

BAX14

Abstract: MAM246 GENERAL PURPOSE DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass

BAX12

Abstract: BAX12 equivalent DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

BAX12

Contextual Info: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone

BAX12

Abstract: D035
Contextual Info: Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

BAX18

Abstract: 5U4 rectifier
Contextual Info: Philips Semiconductors Product specification General purpose diode BAX18 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX18 is a general purpose diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

Contextual Info: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,

Contextual Info: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.

7z66b

Abstract: BAX18 diode td3 general purpose diode
Contextual Info: b'iE D N AMER PHILIPS/DISCRETE • tbSa'lBl □□2b372 2 m IAPX BAX18 GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope prim arily intended fo r rectifier applications Q UICK REFERENCE D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage

Contextual Info: N AUER PHILIPS/DISCRETE bbSB'iai DD2b372 2T4 BAX18 l b'BE D IAPX GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope primarily intended for rectifier applications Q U IC K R E F E R E N C E D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage

BAX14

Contextual Info: • bb53T31 Ü02b3t.b TTÜ * A P X BAX14 N AMER PHILIPS/DISCRETE b'IE D G E N E R A L PU RPO SE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.

BAX50

Abstract: Diode BAx Bax51 BAX48 voltage multiple diode bax49 TO77 Diode BAX 12
Contextual Info: SILICON PLANAR DIODES ULTRA FAST DIODE MATRIX ASSEMBLIES The B AX 45, B A X 46, BAX 47, B A X 48, B A X 49, B A X 50 and BAX 51 are silicon planar epitaxial diode m atrix assemblies in Jedec T O -72, T O -7 7 or T O -9 6 metal cases*. They are designed for high speed applications.

RF sot-23

Abstract: BAV70 BAV99 BAW56 Diode BAV99 SOT23
Contextual Info: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features —Fast switching speed, High conductance B —Surface device type mounting E —Moisture sensitivity level 1 C —Matte Tin Sn lead finish with Nickel(Ni) underplate Unit (mm)

Diode BAx

Contextual Info: TVS mm PRO EK . DEVICES Engineered solutions fo r th e tra n s ie n t environm ent Transient Voltage Suppressors Low Capacitance Diode A rra y DESCRIPTION This Bi-directional Diode Array TVS fam ily is a series of low capacitance silicon transient suppressors

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Free Space Single Emitter Diode Laser Modules cw, passively cooled, high brightness JOLD-4.2-BAXH-1E Design 424300824 Features: Applications:

BAY41

Abstract: BAY43 bax12 BAY42
Contextual Info: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C