DIODE BB 306 Search Results

SOIC-150-8

Abstract: AMIS-30600 AMIS30600LINI1G KL30 KL31 I2T100
Contextual Info: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the

SOIC-150-8

Abstract: I2T100
Contextual Info: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the

Contextual Info: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the

Contextual Info: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the

siemens 27 s1 diode

Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
Contextual Info: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1

Contextual Info: Ordering number : ENA2284A STK672-740AN-E Thick-Film Hybrid IC 2-phase Stepper Motor Driver http://onsemi.com Overview The STK672-740AN-E is a hybrid IC for use as a unipolar, 2-phase stepper motor driver with PWM current control. Applications • Office photocopiers, printers, etc.

Contextual Info: Ordering number : ENA2309 STK672-732AN-E Thick-Film Hybrid IC 2-phase Stepper Motor Driver http://onsemi.com Overview The STK672-732AN-E is a hybrid IC for use as a unipolar, 2-phase stepper motor driver with PWM current control. Applications • Office photocopiers, printers, etc.

734L1

Abstract: 7637 1C TN1 marking diode zener ME ZL 43 BTS 308 POWER SUPPLY BTS SIEMENS siemens profet description BTS734L1 Wiring Diagram siemens 604 semiconductor
Contextual Info: A23SbGS 0001730 75T S IE M E N S PROFET BTS 734L1 Smart Two Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

smd diode RSTJ

Abstract: zener smd 4T SCR application 77150
Contextual Info: SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) R Current limitation /L(SCr) • • • • •

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state

smd transistor code 314

Abstract: 41282 bts BTS 308 731 zener diode BTS 307 E3062A BTS412B BB 313 BTS 305 GI 312 diode POWER SUPPLY BTS SIEMENS
Contextual Info: • fl235b05 0081444 5T1 SIEM EN S PROFET B TS 412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

transistor DA3 307

Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Contextual Info: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

on5134

Abstract: philips ON5134 transistor tda3612 OM8838ps BT 804 triac on5134 Transistor on5217 triacs bt 804 600v D203B SMD Transistor W02
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

CMT2N7002

Abstract: Small Signal MOSFET
Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch

Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch

CMC lcd

Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state

Contextual Info: Electronic Component Distributor. Source:TE Connectivity P.N:D3497 Desc:RELAY TELECOM DPDT 2A 24V Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 Signal Relays AXICOM FT2/FU2 Relay n Telecom/signal relay (dry circuit, test access, ringing)

D3528

Contextual Info: Signal Relays AXICOM FT2/FU2 Relay n Telecom/signal relay dry circuit, test access, ringing line 15x7.5mm (.59x.295”) n Switching current 2A n 2 form C bifurcated contacts (2 CO) n High sensitive 24V and 48V coil versions n Meets Telcordia GR 1089, FCC Part 68 and ITU-T K20, ≥ 2500V

Contextual Info: SCHOTTKY BARRIER DIODE FCH08A03L sa/ sov 3.1 122 MAX FEATURES k .UU.Ul,. y iiE rm DIA 10.31.405) 4.8U89> 'MAX o S im ila r to TO-220AB Case o F u lly M olded Isolation 2.H5(.112I 2.551.11») o D u a l D iodes-C athode C om m on O L ow F o rw a rd V o ltag e D rop

D3497

Abstract: 9151 terminal D3491 2-1462035-7 axicom fu2 D3402
Contextual Info: Signal Relays AXICOM FT2/FU2 Relay n Telecom/signal relay dry circuit, test access, ringing line 15x7.5mm (.59x.295”) n Switching current 2A n 2 form C bifurcated contacts (2 CO) n High sensitive 24V and 48V coil versions n Meets Telcordia GR 1089, FCC Part 68 and ITU-T K20, ≥ 2500V