DIODE BOS 16 Search Results

BLS 18M-PS-1P-E5-C-S4

Abstract: 18M-PA-1PD-E5-C-S Balluff bos 18m 18M-PA-1QB-E5-C-S4 BLS-18M-XX-1P-E5-L-S4 18M-PS-1P-E5-C-S4 BLS 18M-XX-1P-E5-L-S4 18M-PO-1P-E5-C-S4 18M-PO-1RD-E5-C-S4 18M-WS-7PB-B1-L
Contextual Info: Tubular Optical Sensors BOS 18M Technical Description Available Models Features Applications Available in the popular 18mm tubular housing, the BOS 18M optical sensor family provides additional durability by using an epoxy filled, metal housing. These sensors solve tough applications where environmental

350mA 220vac driver

Abstract: MP4000 220vac LED driver Offline High Brightness STD3NK60ZT4 marking BOs
Contextual Info: MP4000 Offline High Brightness White LED Driver Controller The Future of Analog IC Technology DESCRIPTION FEATURES The MP4000 is a high efficiency step-down converter designed for driving high brightness Light Emitting Diodes LEDs . • • • The MP4000 drives an external MOSFET in the

MP4000

Abstract: STD3NK60ZT4 MP4000DS HIGH POWER 1 WLED LED100V 220vac LED driver MP4000DS-LF-Z Offline High Brightness
Contextual Info: MP4000 Offline High Brightness White LED Driver Controller The Future of Analog IC Technology DESCRIPTION FEATURES The MP4000 is a high efficiency step-down converter designed for driving high brightness Light Emitting Diodes LEDs . • • • The MP4000 drives an external MOSFET in the

mp4001

Contextual Info: MP4001 Universal Input High Brightness White LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP4001 is a high efficiency step-down converter designed for driving the high brightness Light Emitting Diodes LEDs . • • • • • •

Contextual Info: SCHOTTKY BARRIER DIODE 16MQ50 16MQ60 i6.6A/50~60v FEATU R ES ° Hermetically Sealed Case ° High Reliability Device “Low Forward Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 60 Volts Types Available + Dimensions in mm Inches

lm3i7

Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
Contextual Info: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24

diode mur

Abstract: 1640C A1W diode
Contextual Info: E MUR1620CT - MUR1660CT TAIWAN SEMICONDUCTOR RoHS 16.0 AMPS. Switchmode Power Rectifiers TQ-22QAB C O M P L IA N C E .ya,i iiy TTivTTi F e a tu re s ❖ <> 4❖ Ultrafast 35 and 60 Nanosecond Reoovery times 17 S’ C operating J u notion Tempc rature Popular TO-22D Package

Contextual Info: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B

MUR1660

Abstract: 1620CT 1660CT diode MUR 120 diode mur oasi 1640CT MUR1620CT MUR1660CT mur1620
Contextual Info: E TAIWAN SEMICONDUCTOR M U R 1 6 2 0 C T - M U R 1 6 6 0 C T 16.0 AMPS. Switch mode Power Rectifiers tò RoHS IQ -220A B COMPLIANCE a •ami no iMn Mr.t i .‘ I - 1IIT1 . 'I a:;:^4i I F e a tu re s ❖ <> <5*- . 1 ^ . 1 VI I U ltrafast 35 and 60 N anosecond R eoovery tim es

IRFP350

Abstract: IRFP350FI 0DM5740 V435
Contextual Info: 7 c12,ì 2 3 7 *57 TYPE IRFP350 IRFP350FI • . ■ ■ . 0 DMS73T TS7 ■ SGTH SGS-THOMSON ;L[1OT *S IRFP350 IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R d S oii Id 400 V 400 V < 0.3 n < 0.3 n 16 A 10 A TYPICAL FtDS(on) = 0.21 £i

SLD323

Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

IRLZ20

Abstract: IRLZ24 DIODE S3V 08 S3V 8* Rectifier DIODE S3V J50 mosfet DIODE S3V 40 S3V 15 diode
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ24/20 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: CM200HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S iT lQ lB IGBTMOD H-Series Module 200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: SLD302B SONY. Block-type 200mW High Power Laser Diode Description Package Outline U nit : mm SLD 302B is a high power laser diode m ounted on a 3 x 3 x 5mm Copper block. It is ideal fo r a pp lica tio ns w h ich require a m inim al distance between the laser fa ce t and

Contextual Info: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2

Contextual Info: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode V3I0&'58 >f é Ì • Avalanche-rated Pin 1 Pin 2 G Type BUZ 334 Vbs 600 V Pin 3 D S b ffDS on Package Ordering Code 12 A 0.5 n TO-218AA C67078-S3130-A2 Maximum Ratings Parameter

Contextual Info: International h ?r Rectifier HEXFET Power M O S F E T • • • • • • • • I 4655452 0015D34 *nb « I N R PD-9.386G IRFD210 INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling

VQE 13E

Contextual Info: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package

emitter phototransistor til 31

Abstract: n50a TRANSISTOR c 5521 D03SS23 optocoupler 450
Contextual Info: MCT2 J \ _ OPTOCOUPLER I— .T This product range is one of the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply to the specifications of the main part of the optocoupler market.

MC74F158A

Abstract: ad11437
Contextual Info: MOTORQL% - s~MicOW~uc~OF% Order this data sheet by MC74F158&D —, ~ Mc74Fa 58A The MC7dF?53A is a high-speed quad Z-input multip[e~:er. !t seiects four bits of data Select and Enab!e inptJts. TilI? four buffered outfrom I~PJQsources using the comm,.n puts pres~nt the sel@cted data in the in\jerted form, The F158A can also generate any

Contextual Info: SGS-THOMSON &Mra [IL[l gT!®*S TDA7275A MOTOR SPEED REGULATOR ADVANCE DATA • ■ ■ ■ ■ EXCELLENT VERSATILITY IN USE HIGH OUTPUT CURRENT (up to 1.5 A LOW QUIESCENT CURRENT LOW REFERENCE VOLTAGE (1.32 V) EXCELLENT PARAMETERS STABILITY VER­ SUS AMBIENT TEMPERATURE

Contextual Info: SIEMENS TEMPFET BTS114A Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab ^ < 5 = r > \ 12 Pin Type BTS114A Vm 50 V 1 2 3 G D S h ftoKcn Package Ordering Code

diode c651

Contextual Info: HD74HC651 HD74HC652 # O c t a l B u s T r a n s c e i v e r s / R e g i s t e r s with i n v e r t e d 3 - s t a t e o u t p u t s # O c t a l B u s T r a n s c e i v e r s / R e g i s t e r s (w ith 3 - s t a t e o u t p u t s ) This device consists of bus transceiver circu its, D-type flip-

TDA7275A

Abstract: schematic diagram motor
Contextual Info: >7/ S G S -T U O M S O N TDA7275A ¡[L [I g ¥ ^ * S MOTOR SPEED REGULATOR A D V A N C E D A TA • ■ ■ ■ ■ EXCELLENT VERSATILITY IN USE HIGH OUTPUT CURRENT (up to 1.5 A LOW QUIESCENT CURRENT LOW REFERENCE VOLTAGE (1.32 V) EXCELLENT PARAMETERS STABILITY VER­