IRLZ24 Search Results

IRLZ24L

Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Contextual Info: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive

Contextual Info: IRLZ24S_RC, IRLZ24L_RC, SiHLZ24S_RC, SiHLZ24L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

IRLZ24

Abstract: SiHLZ24 SiHLZ24-E3
Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier

IRLZ24L

Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Contextual Info: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

444p

Contextual Info: I IN R 4ÔSSMSS GGISTÌM SOT International [rag Rectifier PD-9.904 IRLZ24S HEXFET Power M O S FE T INTERNATIONAL R E C T I F I E R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature

AN-994

Abstract: IRLZ24N IRLZ24NL IRLZ24NS mbe regulator
Contextual Info: PD - 95584 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ24NSPbF IRLZ24NLPbF l HEXFET Power MOSFET

Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: PD - 94998 IRLZ24NPbF • Lead-Free www.irf.com 1 2/11/04 IRLZ24NPbF 2 www.irf.com IRLZ24NPbF www.irf.com 3 IRLZ24NPbF 4 www.irf.com IRLZ24NPbF www.irf.com 5 IRLZ24NPbF 6 www.irf.com IRLZ24NPbF www.irf.com 7 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches

Contextual Info: PD - 94998 IRLZ24NPbF • Lead-Free 1 IRLZ24NPbF 2 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)

IRLZ24

Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V

1RLZ24

Abstract: F17a 557C AN-994 IRLZ24 IRLZ24S SMD-220 smd kir RK 25 smd diode marking 69a
Contextual Info: International |B» Rectifier PD -9.557C IRLZ24 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive • R D S (on S p ecifie d a t V g s = 4 V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

smd diode 444

Contextual Info: IRLZ24S, SiHLZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

c693

Abstract: sd marking bh
Contextual Info: PD -9.1358D International IO R Rectifier • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRLZ24NS Low-profile through-hole (IRLZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated IRLZ24NS/L

IRLZ24A

Abstract: BJCM 2501S 2SC 4145 dI 437 to220
Contextual Info: IRLZ24A Advanced Power MOSFET FEATURES • B V dss = 60 V ^DS on = 0 -0 7 5 ß Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■

IRLZ24A

Contextual Info: IRLZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.075 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V

IRLZ24N

Contextual Info: PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description

IRLZ24N

Abstract: IRF1010 E DATASHEET 668 8e IRF1010 irf1010 MOSFET
Contextual Info: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier

IRLZ24

Abstract: SiHLZ24 SiHLZ24-E3
Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: PD-9.1358D International IQR Rectifier IRLZ24NS/L HEXFET Power M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRLZ24NS • Low-profilethrough-hole(IRLZ24NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: PD-9.557C International ÉÈ Rectifier • 4ÔS54S2 □ G IS 'î flû 205 ■ INR IRLZ24 INTERNATIONAL R E C T I F I E R HEXFET Power M O SFET Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 1 7 5 °C Operating Temperature

IRLZ24N

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V

IRLZ24

Abstract: SiHLZ24 SiHLZ24-E3
Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N