DIODE BY 226 Search Results

D757

Abstract: 227G 555D
Contextual Info: BY 226G, BY 227G, BY 228G power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V

N81 diode

Abstract: 228S
Contextual Info: BY 226S, BY 227S, BY 228S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

mosfet amp ic

Abstract: transistor motorola 236 MGY25N120D
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGY25N120D

Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGY25N120D

Abstract: 340G-02
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

227G

Abstract: 228g 226G
Contextual Info: BY 226G, BY 227G, BY 228G *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

Contextual Info: BY 226S, BY 227S, BY 228S .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

Contextual Info: BY 226G, BY 227G, BY 228G *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

228S

Abstract: BY227S
Contextual Info: BY 226S, BY 227S, BY 228S .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

SDD303KT

Contextual Info: SDD303KT 100mm RECTIFIER DIODE 6000 Volts / 3500 Amp The SDD303 rectifier diode features a nominal 100mm diameter silicon junction design, manufactured by the proven multi-diffusion process. SDD303 is designed specifically for high current surges as appropriate for pulse power applications.

MV104

Abstract: MV104 Motorola "back diode" diode characteristics
Contextual Info: MOTOROLA Order this document by MV104/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

marking dp sot363

Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N301

Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

MSD6100

Abstract: DIODE 6AA
Contextual Info: MOTOROLA Order this document by MSD6100/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 1 2 3 CASE 29–04, STYLE 3 TO–92 TO–226AA 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage

BC237

Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

MSD6150

Contextual Info: MOTOROLA Order this document by MSD6150/D SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode MSD6150 3 Anode 1 2 3 CASE 29–04, STYLE 4 TO–92 TO–226AA Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Y25n120d

Contextual Info: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.