transistor c114
Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Text: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC
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Intel740TM
BAV99LT1
C3216X7R1C105KT000N
C0805C104K5RAC
C0805C103K5RAC
330PF
T491D106K016AS
C0805C331J5GAC
T491D226K016AS
transistor c114
c102 TRANSISTOR
TRANSISTOR c105
transistor c114 chip
c104 TRANSISTOR
C114 transistor
c107 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR C107
c101 TRANSISTOR
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smd zener diode 5v
Abstract: 13.8 8w zener diode transistor 12p smd 12p smd CZRM27C3V6P CZRM27C6V8P CZRM27C7V5P CZRM27C8V2P CZRM27C110P CZRM27C200P
Text: COMCHIP SMD DIODE SPECIALIST Surface Mount Zener Diode CZRM27C3V6P THRU C200P Features Low profile surface-mount package Zener and surge current specification Low leakage current Power Dissipation 0.8Watts MINI-SMA 0.161 4.1 0.146(3.7) Excellent stability
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CZRM27C3V6P
C200P
MIL-STD-202,
04gram
MDS0310010B
smd zener diode 5v
13.8 8w zener diode
transistor 12p smd
12p smd
CZRM27C6V8P
CZRM27C7V5P
CZRM27C8V2P
CZRM27C110P
CZRM27C200P
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features ! UNIFORM ! LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY ! FLUSH The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. MOUNTED ON P.C. BOARDS.
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89mmx8
KB-C100SRW
DSAB5261
APR/10/2003
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with LOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.
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89mmx8
KB-C100SRW
DSAB5261
APR/22/2005
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with LOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.
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89mmx8
KB-C100SRW
DSAB5261
MAR/26/2005
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with LOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.
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89mmx8
KB-C100SRW
DSAB5261
OCT/31/2005
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Features Hyper Red Description Uniform light emitting area. The Hyper Red source color devices are made with Al- Low current operation. GaInP on GaAs substrate Light Emitting Diode. Easily mounted on P.C. boards.
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89mmx8
KB-C100SURKW
DSAK2966
MAY/19/2010
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SRW SUPER BRIGHT RED Features Description zUNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with zLOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. zEASILY MOUNTED ON P.C. BOARDS.
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89mmx8
KB-C100SRW
DSAB5261
OCT/30/2006
13340002rward
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Untitled
Abstract: No abstract text available
Text: SKB B.C1000L5B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter !"53 !""3 !!"35 4 " ! % & 8&& 6&& %&&& ! 8& %)+ )+& @6& 2 5<= =8&%&&&>+= 5<= =6&%&&&>+=
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C1000L5B
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KB-C100SRD
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SRD SUPER BRIGHT RED Features Description zUNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with zLOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. zEASILY MOUNTED ON P.C. BOARDS.
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89mmx8
KB-C100SRD
DSAD5553
APR/07/2007
KB-C100SRD
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.
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89mmx8
KB-C100SURKW
DSAK2966
MAY/19/2010
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.
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89mmx8
KB-C100SURKW
DSAM8384
JAN/20/2013
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SRW Super Bright Red Features Description z Uniform light emitting area. The Super Bright Red source color devices are made with z Low current operation. Gallium Aluminum Arsenide Red Light Emitting Diode. z Easily mounted on P.C. boards.
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89mmx8
KB-C100SRW
DSAB5261
MAR/25/2011
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Untitled
Abstract: No abstract text available
Text: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.
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89mmx8
KB-C100SURKW
DSAK2966
MAY/02/2013
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ATC-C1000-100
Abstract: photodiode free space
Text: 1,0 W CW Laser Diode Model ATC-C1000-100 Key features Applications • • • • • • • • • • • 1.0 W CW output power 100 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability C-mount, ATC and TO-3 packages
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ATC-C1000-100
ATC-C1000-100
photodiode free space
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Photodiode
Abstract: No abstract text available
Text: 1 W CW Laser Diode Model ATC-C1000-3800 Key features Applications • • • • • • • • 1 W CW output power 380 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability С-mount, ATC and TO-3 packages Medical, ophthalmic and dental application
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ATC-C1000-3800
Photodiode
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : FTO-220 SF20SC9 Unit-mm Weight 1.9g Typ 4.5 90V 20A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrs m • 71 [ Æ - J U K • F u ll M o ld e d Rating • High lo R a tlng-S m all-P K G
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OCR Scan
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SF20SC9
FTO-220
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings
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OCR Scan
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PDF
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ISOPLUS247â
60N60U1
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c82 004
Abstract: C4V7 517
Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass
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BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53R31
2b71R
S0D81.
c82 004
C4V7 517
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Bz027
Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Text: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended
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PDF
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QQ2b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
0D2b72fl
S0D87.
Bz027
C510
C82 diode
c82 004
C100
C270
C7V5
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