DIODE C5V Search Results

V1470

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • • • • High Capacitance Ratio : Civ/C5v=5.0 Min. Excellent C-V Characteristics. Variations of Capacitance Values is Little.

c5v diode

Abstract: KDV1470
Contextual Info: KDV1470 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C1V/C5V=5.0 Min. E B L L Excellent C-V Characteristics. D Variations of Capacitance Values is Little.

K 3677

Abstract: KDV1471 diode c5v 3016 sot
Contextual Info: KDV1471 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C1V/C5V=5.0 Min. E B L L Excellent C-V Characteristics. D Variations of Capacitance Values is Little.

C100P

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES E B L ・High Capacitance Ratio : C1V/C5V=5.0 Min. L ・Variations of Capacitance Values is Little. D ・Excellent C-V Characteristics.

F15030

Abstract: c5v diode KDV1472
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. L K H F ᴌVariations of Capacitance Values is Little. A ᴌExcellent C-V Characteristics. 1 E ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min.

c5v diode

Abstract: KDV1472 M/1N 2002 diode
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. K L H F Variations of Capacitance Values is Little. A Excellent C-V Characteristics. 1 E High Capacitance Ratio : C1V/C5V=5.0 Min.

c5v diode

Abstract: KDV1471
Contextual Info: KDV1471 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min. E B L L ᴌExcellent C-V Characteristics. 2 3 G H A ᴌSmall Package. D

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. L K H F ・Variations of Capacitance Values is Little. A ・Excellent C-V Characteristics. 1 E ・High Capacitance Ratio : C1V/C5V=5.0 Min.

lm 742

Contextual Info: SEM IC O N D U C TO R TE CHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO B A N D T U N IN G A PPLICATION. F EA TU RES • High Capacitance Ratio : C lv/C5V=5.0 Min. • Excellent C-V Characteristics. • Variations o f Capacitance Values is Little.

diode c5v

Abstract: ir10 diode c5v diode diode IR10 max20038
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES ・Low Series Resistance : 0.6Ω Max. ・High Capacitance Ratio : 1.7(Min.)～2.2(Max.) MAXIMUM RATING (Ta=25℃) CHARACTERISTIC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

diode zener Z11

Abstract: Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

kpe 153

Abstract: KPB datasheet BZX84C2V4W BZX84C2V7W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C4V7W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER SOT-323 DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

KDV149

Abstract: C1-62 c5v diode diode 7.52
Contextual Info: KDV149 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA AM RADIO BAND TUNING APPLICATION. B A FEATURES ᴌHigh Capacitance Ratio : C1V/C8V=19.5 Typ. . O F ᴌHigh Q : Q=200(Min.). H ᴌSmall Package. M G ᴌLow Voltage Operation. : 1Vᴕ8V.

kpc 45 94v-0

Abstract: MARKING CODE KRC zener diode c18 BZX84C11TS BZX84C16TS
Contextual Info: BZX84C2V4TS - BZX84C39TS NEW PRODUCT TRIPLE SURFACE MOUNT ZENER DIODE ARRAY Features • · · Zener Voltages from 2.4 - 39V Three Isolated Diode Elements in a Single Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-363 A C1 C2 C3 KXX YM

HJ 13002

Abstract: KDV251M KDV251S c5v diode 10Qt cov marking cov sot23
Contextual Info: K EC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.612 Max. • High Capacitance Ratio : 1.7(Min.)~2.2(Max.) MAXIMUM RATINGS (Ta=25°C)

c5v diode

Abstract: diode c5v
Contextual Info: KDV251M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR C/P, CB PLL B A FEATURES Low Series Resistance : 0.6 Max. O F High Capacitance Ratio : 1.7(Min.) 2.2(Max.) H G M RATING UNIT Reverse Voltage VR 12 V

smd zener diode code DE

Abstract: Zener diode smd marking 22 zener smd marking de Zener diode smd marking code w1 D31 SMD MARKING axial zener diodes marking code c3v6 D31 SMD CODE BZD84C51
Contextual Info: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2

marking KDL

Abstract: KDS DATE CODE KDK SOT-23 zener sot-23 marking 330 smd code marking c43 sot23 kds 0037 sot23 zenner 5.6 volts zener diode specifications
Contextual Info: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2

kpc 45 94v-0

Abstract: KPC 45 94V KPB datasheet BZX84C2V4TS BZX84C2V7TS BZX84C39TS BZX84C3V0TS BZX84C3V3TS BZX84C6V2TS-7 J-STD-020A
Contextual Info: BZX84C2V4TS - BZX84C39TS NEW PRODUCT TRIPLE SURFACE MOUNT ZENER DIODE ARRAY Features • · Zener Voltages from 2.4 - 39V Three Isolated Diode Elements in a Single Ultra-Small Surface Mount Package. SOT-363 A C1 · · · C3 KXX YM Mechanical Data · · · ·

Z1073

Abstract: z1071 z1072 DIODE BZX C9VI Z1075 83C12 83C10 83C13 DIODE BZX 83
Contextual Info: BZX83 Silicon Z diode for 500 mW BZX 83 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.