DIODE D25 N8 Search Results

Contextual Info: MegaMOS FET IXTH 14 N80 V DSS I D25 R DS on 800 V 14 A 0.70 n N-Channel Enhancement Mode Preliminary data Symbol Maximum Ratings Test Conditions Tj = 25°C to 150°C 800 V V DGR Td = 25 °C to 150°C; RGS= 1 Mfi 800 V Continuous +20 V Transient ±30 V >

IXYS DS 145

Contextual Info: MegaMOSTMFET IXTH 14 N80 VDSS = 800 V I D25 = 14 A RDS on = 0.70 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS Continuous ±20 V

Contextual Info: mm T % r XYS Standard Power MOSFET v DSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80> 800 V p ^D25 DS on 6A 6A 1.8 ß 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 800 V v DGR Maximum Ratings T.J = 25°C to 150°C;* RGS„ = 1 MSi

MOSFET 11N80

Abstract: 11N80 MOSFET 14n80 ns800 13n80
Contextual Info: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C

7N80

Contextual Info: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 Ω trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

11N80

Abstract: 13N80 IXFH13N80
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13

MOSFET 11N80

Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
Contextual Info: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

4835 mosfet

Abstract: 6n80a
Contextual Info: VDSS Standard Power MOSFET D ^025 IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V * OSS T j = 25°C to 150°C 800 V Tj = 25°C to 150°C; RGS = 1 MQ 800 V Vos Continuous ±20 V VGSM

11n80

Contextual Info: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A

6n80

Abstract: N80A D-68623 IXTM6N80A
Contextual Info: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS

5SHX26L4520

Abstract: tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4520 Doc. No. 5SYA1251-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency

IGCT thyristor ABB

Abstract: IGCT
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency

86A-5163

Abstract: PWM controller for ZVS half-bridge optocoupler PC817 l6591 AHB ZVS PC817 optocoupler sharp optocoupler PC817 AHB transformer 1754.0004 Magnetica SMD optocoupler IC PC817 DIODE D28
Contextual Info: AN2852 Application note EVL6591-90WADP: 90 W AC-DC asymmetrical half-bridge adapter using L6591 and L6563 Introduction This document describes the characteristics and performance of a 90 W wide range input AC-DC adapter based on asymmetrical half-bridge topology AHB .

w10 mic package bridge rectifier

Abstract: smd diode B64 ferrite core tdk pc30 DIN41612 connectors ERNI bob smith termination POE bob smith termination schematic molex tdk ferrite pc30 MF3 IC D41 schottky barrier diode b22 Flash SIMM 80 programmer
Contextual Info: MSC8101 Application Development System User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described

35L4520

Abstract: IGCT high voltage
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity

35L4522

Abstract: high power igct abb
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating  Optimizedfor low frequency  High electromagnetic immunity

HFBR-1528Z

Abstract: A125 B125 HFBR-2521Z MTA-156 IGCT thyristor current max igct abb 40L4511
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 3600 28x103 1.7 0.454 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 40L4511 Doc. No. 5SYA1252-00 March 11 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity

"coil capacitance"

Contextual Info: HV9923 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9923 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC.

HV9921

Abstract: "coil capacitance"
Contextual Info: HV9921 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9921 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC. The

"coil capacitance"

Abstract: HV9922
Contextual Info: HV9922 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9922 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC. The

b0912

Abstract: hv9923 HV9923N3-G HV9923N8-G LINEAR REGULATOR sot-89 ECQ-E4154KF LWE67C MUR160 rs flip-flop IC 7400
Contextual Info: HV9923 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9923 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC.

mosfet 4496

Abstract: HV9922 HV9921 HV9921 DATASHEET HV9923N8-G HV9921N3-G HV9923 rs flip-flop IC 7400
Contextual Info: HV9921/HV9922/HV9923 Initial Release 3-Pin Switch-Mode LED Lamp Driver ICs Features Constant Output Current: o HV9921 – 20mA o HV9922 – 50mA o HV9923 – 30mA Universal 85-264VAC Operation Fixed OFF-Time Buck Converter Internal 500V Power MOSFET Applications

Contextual Info: HV9921/HV9922/HV9923 Initial Release 3-Pin Switch-Mode LED Lamp Driver ICs Features Constant Output Current: o HV9921 – 20mA o HV9922 – 50mA o HV9923 – 30mA Universal 85-264VAC Operation Fixed OFF-Time Buck Converter Internal 500V Power MOSFET Applications

b0406

Abstract: LWE67C MARKING sihv triac q HV9923
Contextual Info: Supertex inc. HV9923 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ►► ►► ►► ►► The HV9923 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC.