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    13N80 Search Results

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    STMicroelectronics STF13N80K5

    MOSFET N-CH 800V 12A TO220FP
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    STMicroelectronics STFU13N80K5

    MOSFET N-CH 800V 12A TO220FP
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    Mouser Electronics STFU13N80K5 1,794
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    STMicroelectronics STFU13N80K5 1,794 1
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    STMicroelectronics STB13N80K5

    MOSFET N-CH 800V 12A D2PAK
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    DigiKey STB13N80K5 Cut Tape 909 1
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    STB13N80K5 Digi-Reel 909 1
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    Mouser Electronics STB13N80K5 2,739
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    STMicroelectronics STB13N80K5 2,739 1
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    onsemi FQA13N80-F109

    MOSFET N-CH 800V 12.6A TO3PN
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    DigiKey FQA13N80-F109 Tube 463 1
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    Mouser Electronics FQA13N80-F109 378
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    Rochester Electronics FQA13N80-F109 12,380 1
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    TME FQA13N80-F109 1
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    Richardson RFPD FQA13N80-F109 450
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    Wuhan P&S FQA13N80-F109 14,749 1
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    STMicroelectronics STP13N80K5

    MOSFET N-CH 800V 12A TO220
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    DigiKey STP13N80K5 Tube 33 1
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    Avnet Americas STP13N80K5 Bulk 14 Weeks, 5 Days 1
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    Mouser Electronics STP13N80K5 851
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    TME STP13N80K5 1
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    Avnet Silica STP13N80K5 5,000 15 Weeks 50
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    13N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800 coolmos

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 13 A VDSS = 800 V RDS on max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features


    Original
    PDF 13N80C ISOPLUS220 E72873 20070703a 800 coolmos

    13N80C

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 13N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous


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    PDF ISOPLUS220TM 13N80C 220TM 13N80C

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V = 13 A ID25 Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220


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    PDF ISOPLUS220TM 13N80C 728B1 065B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A VDSS = 800 V RDS on) max = 290 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D fl S S isolated


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    PDF 13N80C ISOPLUS220â E72873 20080526b

    0-80V

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 13N80 IXTM 13N80 VDSS = 800 V = 13 A ID25 RDS on = 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient


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    PDF 13N80 13N80 O-247 O-204 O-204 O-247 100ms 0-80V

    13N80Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 13N80Q IXFT 13N80Q Q Class VDSS ID25 RDS on = = = 800 V 13 A 0.70 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 13N80Q 13N80Q O-268 O-247 O-268AA

    13N80C

    Abstract: 13n80 E72873
    Text: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A = 800 V VDSS RDS on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D q S S isolated


    Original
    PDF 13N80C ISOPLUS220TM E72873 20080526b 13N80C 13n80 E72873

    13n80

    Abstract: No abstract text available
    Text: IXFH 13N80Q IXFT 13N80Q HiPerFETTM Power MOSFETs Q Class VDSS ID25 RDS on = 800 V = 13 A = 0.70 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 13N80Q 13N80Q O-268 O-247 O-268 13n80

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V ID25 = 13 A Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220


    Original
    PDF ISOPLUS220TM 13N80C 728B1 065B1 123B1

    11n80

    Abstract: 13N80 TEST14 D-68623
    Text: VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOSTMFET I D25 RDS on 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS


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    PDF 11N80 13N80 O-247 11N80 13N80 O-204 O-204 TEST14 D-68623

    MOSFET 11N80

    Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs

    13N80Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 13N80Q IXFT 13N80Q Q Class VDSS ID25 RDS on = = = 800 V 13 A 0.70 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 13N80Q 13N80Q

    11N80

    Abstract: 13N80 IXFH13N80
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13


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    PDF 11N80 13N80 11N80 13N80 IXFH13N80

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient


    Original
    PDF 11N80 13N80

    11n80

    Abstract: No abstract text available
    Text: p V DSS IXTH/IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOS FET ^D25 DS on 11 A 0.95 Î2 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V 'o s s Tj = 25°C to 150°C 800 V V«, Tj = 25°C to 150°C ; Ras = 1 M£i 800 V VGS


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    PDF 11N80 13N80 O-247 O-204 C2-67

    MOSFET 11N80

    Abstract: 11N80 MOSFET 14n80 ns800 13n80
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C


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    PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800

    Untitled

    Abstract: No abstract text available
    Text: laixYS HiPerFET Power MOSFETs IXFH 13N80 V DSS I 800 V 13 A = 0.80 Q 025 RDS on N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 68 Symbol Test Conditions V OSS ^ =25°C to150°C 800 V V OCR ^ = 25° C to 150° C; RGS= 1 M il 800 V Vos v GS„


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    PDF 13N80 to150 O-247AD IXFH13N80

    Untitled

    Abstract: No abstract text available
    Text: □ JLTXYS HHifl æ* 3k. X IXFH 13N80Q IXFT 13N80Q HiPerFET Power MOSFETs Q C lass V DSS = 800 V 13 A ” — 0.70 Q ^D25 R DS on trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, LowQ Preliminary data sheet Symbol dv/dt Maximum Ratings


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    PDF 13N80Q O-247

    Untitled

    Abstract: No abstract text available
    Text: nixYS MegaMOS FET IXTH/IXTM 13N80 VDSS = 800 V U =13 A ^D S on = O ' * * ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V * DSS Tj =25°Cto150°C 800 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 800 V VGS v GSM Continuous ±20 V Transient


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    PDF 13N80 Cto150 O-247 O-204 O-204 O-247 C2-60 IXTH13NB0 IXTM13N80 C2-61

    11n80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A


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    PDF IXFH/IXFM13 11N80 13N80 13N80 O-247

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


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    PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


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    PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60