IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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Untitled
Abstract: No abstract text available
Text: LM83 LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS111A LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial
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SNIS111A
2N3904s.
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lm83
Abstract: No abstract text available
Text: LM83 LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS111A LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial
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SNIS111A
2N3904s.
lm83
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.
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1N6642D2A
1N6642D2B
1N6642D2C
1N6642D2D
63Sn/37Pb)
300mA
1N6642D2D-JQRS
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.
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1N6642D2A
1N6642D2B
1N6642D2C
1N6642D2D
63Sn/37Pb)
300mA
1N6642D2D-JQRS
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sot-23 DIODE marking code D3B
Abstract: CCZ23C24 marking code d5g CCZ23C51 MARKING CODE D2H d3f sot23 D6B marking MARKING D3E D2E diode MARKING CODE D3E
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CCZ23C2V7 – CCZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CCZ23C2V7
CCZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CCZ23CXVX
sot-23 DIODE marking code D3B
CCZ23C24
marking code d5g
CCZ23C51
MARKING CODE D2H
d3f sot23
D6B marking
MARKING D3E
D2E diode
MARKING CODE D3E
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LM83
Abstract: Silicon temperature sensors ADM1021 LM83CIMQA LM83CIMQAX LM84 MAX1617 04H0000 DS101058-6
Text: LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial interface that senses the voltage and thus the temperature of three remote diodes using a Delta-Sigma analog-to-digital
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2N3904s.
LM83
Silicon temperature sensors
ADM1021
LM83CIMQA
LM83CIMQAX
LM84
MAX1617
04H0000
DS101058-6
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LM83
Abstract: LT 6208 ADM1021 LM83CIMQA LM83CIMQAX LM84 MAX1617
Text: LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial interface that senses the voltage and thus the temperature of three remote diodes using a Delta-Sigma analog-to-digital
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2N3904s.
LM83
LT 6208
ADM1021
LM83CIMQA
LM83CIMQAX
LM84
MAX1617
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d2c03
Abstract: No abstract text available
Text: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
0E-05
0E-04
0E-03
0E-02
0E-01
d2c03
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ipad charger
Abstract: emif05 Detector Schottky Diodes at 915MHZ pin connector ipad EMIF02-MIC04F2 STBGH91 STPS140M ipad sensor 3 mobile phone "Camera Module" conector usb PCB
Text: IPAD protection and rectifiers for mobile communication TM February 2006 www.st.com Contents Advantages of IPAD 4 Available packages 6 IPAD and discretes application mapping 7 LCD and camera 8 Bottom conector 10 USB interface 12 Memory card 14 SIM card interface
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BRMLDMOB0206
ipad charger
emif05
Detector Schottky Diodes at 915MHZ
pin connector ipad
EMIF02-MIC04F2
STBGH91
STPS140M
ipad sensor
3 mobile phone "Camera Module"
conector usb PCB
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Untitled
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
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Untitled
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
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skm200gal123d
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
skm200gal123d
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Untitled
Abstract: No abstract text available
Text: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
MMDF2C03HD/D
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Untitled
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
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Untitled
Abstract: No abstract text available
Text: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*
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200GB123D
200GAL123D
200GAR123D
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Untitled
Abstract: No abstract text available
Text: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
MMDF2C03HD/D
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Untitled
Abstract: No abstract text available
Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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NTMD2C02R2
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LM83
Abstract: j1n transistor diode BY 127 code j1n Transistor d2t 78 zener diode data 2N3904 ADM1021 LM83CIMQA LM83CIMQAX LM84
Text: Semiconductor tß LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description On-board local tem perature sensing The LM 83 is a digital tem perature senso r w ith a 2 w ire serial interface th a t senses the voltage and thus the tem perature of
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2N3904s.
LM83
j1n transistor
diode BY 127
code j1n Transistor
d2t 78 zener diode data
2N3904
ADM1021
LM83CIMQA
LM83CIMQAX
LM84
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SE304
Abstract: No abstract text available
Text: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S
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bM5755S
SE304
SE304
Ta-25
bH2752S
T-41-11
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ZS 1052 AC UL
Abstract: k244 VRM 12.5 SK24100C SK2440C SK2450C SK2460C SK2470C sk245 diode db3 51
Text: DIOTEC ELECTRONICS CORP SflE D 2 3 ^ 1 0 7 0D0G05T 243 • D2C ■ DIX Data Sheet No.: SBDT-2400-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 24 AMP SCHOTTKY BARRIER RECTIFIERS TO-247 (TO-3PÏ
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0D0G05T
SBDT-2400-A
UL94V-0
MIL-STD-202E,
DB25/T
DB25/W
DB25P/T
DB25P/W
T0-220
O-247)
ZS 1052 AC UL
k244
VRM 12.5
SK24100C
SK2440C
SK2450C
SK2460C
SK2470C
sk245
diode db3 51
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP SflE D 23^107 • 0D0G05T 243 D2C ■ DIX Data Sheet No.: SBDT-24C DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 24 AMP SCHOTTKY BARRIER RECTIFIERS TO-247 (TO-3PÏ FEATURES:
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0D0G05T
SBDT-24C
O-247
UL94V-0
MIL-STD-202E,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
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Untitled
Abstract: No abstract text available
Text: DS1395/DS1397 DALLAS SEMICONDUCTOR D S 1 3 9 5 /D S 1 3 9 7 RAMified Real Time Clock FEATURES PIN ASSIGNMENT * Ideal for EISA bus PCs A0on A1CÉ X2dC X10C STBYn r DOCE DICE D2CE D3CE D4DC D5QEZ Dene D7DE \festx * Functionally compatible with MC146818 in 32 KHz
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DS1395/DS1397
MC146818
DS1395S
28-Pin
24-hour
28-PIN
010TNA
I413D
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M7 DIODE POLARITY
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2C02HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.
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MMDF2C02HD
management130
DF2C02H
M7 DIODE POLARITY
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