DIODE EM 513 Search Results

em 518 diode

Abstract: em 513 diode diode em 513 diode 1600 rectifier
Contextual Info: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A

em 518 diode

Abstract: em 513 diode diode em 513 diode 513 diode 518 EM518
Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

diode em 513

Abstract: em 518 diode
Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

mst 702 lf

Abstract: OLD232 INFRARED DIODES OLD232-2 light emitting diode general 910nm
Contextual Info: OKI electronic components OLP232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light em ission m icro-diode sealed w ith a glass lens in a highly reliable metal can on a TO-46 type stem . Its light em ission w a v e peaks at 910 nm.

DSA20T

Abstract: DSA20TB DSA20TC DSA20TE DSA20TG DSA20TJ DSA20TL
Contextual Info: Ordering number :EN2408 _ D S A 2 0 T No.2408 Diffused Junction Type Silicon Diode 2.0A Power Rectifier Junction Tem perature Storage T em perature II P eak Reverse Voltage V rm Average Rectified C urrent Io Surge Forward C urrent Ifsm rfsoo o a t Ta - 25°C

tlp721gb

Abstract: tlp721 MARKING TLP721F
Contextual Info: TLP721 GaAs IRED & PHOTO-TRANSISTOR T L P 7 2 1 O FFIC E M A C H IN E . H O U S E H O L D USE E Q U IP M E N T . S O L ID ST A T E R ELA Y. S W IT C H IN G P O W E R SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

Mosfet K 135 To3

Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
Contextual Info: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV74 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification BAV74 High-speed double diode FEATURES DESCRIPTION

double diode SMD A7p

Abstract: smd code A7p A7P smd a7p smd diode smd A7p diode A7p bav 17 diode A7P DIODE
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV99 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION

n 943 y

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification General purpose diode BAS321 FEATURES PINNING • Sm all plastic SM D package PIN DESCRIPTION • S w itching speed: max. 50 ns 1 cathode • G eneral application

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV99W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips S e m ico n d u cto rs 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99W FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BAS516 High-speed diode 1998 Aug 31 Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAS516 PINNING FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT PMBD6050 High-speed diode Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed diode PMBD6050 FEATURES DESCRIPTION • Sm all plastic SM D package

t5d diode

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification PMBD914 High-speed diode FEATURES DESCRIPTION • Sm all plastic SM D package The P M B D 914 is a high-speed

diode AY 101

Abstract: BAL74W
Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET BAL74W High-speed diode 1999 May 05 Product specification Supersedes data of 1996 Sep 03 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAL74W FEATURES DESCRIPTION • V ery sm all plastic S M D package

Contextual Info: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.

DIODE RK 69

Abstract: BA rx transistor 111-BA ba rx varistor 741 CD 741 741 CN abb combiflex rtxe em 513 diode
Contextual Info: RTXE Component blocks COMBIFLEX 1MRK 513 019-BEN Page 1 Issued: September 2004 Revision: A Data subject to change without notice SE820256 Features • Requires no extra space. • For use in protection and control systems • To be mounted at the rear of the terminal

1PS59SB21

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB21 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB21

Contextual Info: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche