DIODE F4 6A Search Results

diode F4 6A

Abstract: diode F4
Contextual Info: GBU 6A . GBU 6M . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 03 Inline bridge Silicon-Bridge Rectifiers >? 4 >? ? >? A >? > >? B >? C

STTH60P03SW

Abstract: STTH60P03 STTH60P03S
Contextual Info: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain

stth60p03sw

Abstract: IRM-A20 STTH60P03 STTH60P03S STTH60
Contextual Info: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain

stth60p03sw

Contextual Info: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain

474F3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

IFS150B12N3T4_B31

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

UFNF230

Abstract: F-431
Contextual Info: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

STW7NC80Z

Abstract: Zener diode 400V 6A
Contextual Info: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z • ■ ■ ■ ■ ■ VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STW7NC90Z

Contextual Info: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

Diode zener 3a

Abstract: STW7NC80Z diode F4 6A
Contextual Info: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z • ■ ■ ■ ■ ■ VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

LTC4098-3.6

Abstract: A20-LCD15.6 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

TL 078

Abstract: diode F4 6A STW7NC90Z
Contextual Info: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

diode F4 6A

Abstract: 4F36F123
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

Contextual Info: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES

STW7NC80Z

Contextual Info: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STW7NC90Z

Contextual Info: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STPS40L40CT

Abstract: diode marking H2 STPS40L40CW
Contextual Info: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF

STPS40L40CT

Abstract: STPS40L40CW
Contextual Info: STPS40L40CT/CW  LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF

STPS40L40CT

Abstract: STPS40L40CW
Contextual Info: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF

diode F4 6A

Contextual Info: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF

7 band audio spectrum analyzer ic

Abstract: 2SCF2 NJU7305 NJU7505 NJU7505XD NJU7505XM audio connection diagram
Contextual Info: NJU7505 PPRELIMINARY BAND PASS FILTER FOR AUDIO SPECTRUM ANALYZER DISPLAY • GENERAL DESCRIPTION The NJU7505 is a band pass filter for audio spectrum analyzer display. It consists of high and low band pass filters, CR oscillation circuit, control circuit and DC transfer circuit.

Contextual Info: STK681-360-E Thick Film Hybrid IC Forward/Reverse Motor Driver Application Note http://onsemi.com Overview The STK681-360-E is a hybrid IC for use in PWM current control forward/reverse DC motor driver with brush. Function • Allows forward, reverse, and brake operations in accordance with the external input PWM signal.

STW6NA90

Abstract: sd 50 diode
Contextual Info: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC