DIODE FR 209 Search Results

Z9.1B

Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
Contextual Info: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

Z6.8B

Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
Contextual Info: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

SS850

Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MFOD3100 Fiber O ptics — M O D Fam ily Photo D etector Diode Output M O O FAM ILY FIBER O PTICS PHO TO D ETECTO R DIODE O U T P U T . . . d e s ig n e d fo r lo w c o s t in fr a r e d r a d ia t io n d e te c t io n in h ig h f r e q u e n c y F ib e r O p t ic s S y s ­

C16P20F

Abstract: C16P20FR C16P10FR T0247AC C16P10F
Contextual Info: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr :35nsec FEATURES 5.3 209 4.7U85I , » Similar to T0-247AC (TO-3P) Case 15.91.626) . 3.6U42)r r ~ \S $ .ti S a y 3.4(.134) j 0 Dual Diodes - Cathode Common and Anode Common (Type - R )

C16P30F

Abstract: C16P30FR C16P40F C16P40FR
Contextual Info: FAST RECOVERY DIODE C16P30F C16P40F C16P30FR C16P40FR 17.7A/300— 400V/trr : 45nsec FEATURES ,3 .209 Jtl85î 15.91.6261 3 .6 U 4 2 ) , ° Similar to TO-247AC (TO-3P) Case • Dual Diodes - Cathode Common and Anode Common (Type-R) . « Ultra - Fast Recovery

tg 12-6l

Contextual Info: FAST RECOVERY DIODE 1 7 .7 A /5 0 0 V /trr : 55 nsec KCF16A50 F EA TU R ES 5 3 2091 * ° Similar to TO - 247AC Case I' 1851 ^ i 15.91.6261 rT 5 .ï.< S 5 2 ï 5.71.224 5 3i.208) I" ° Dual Diodes-Cathode Common - Î * \ ) 3.61.142' v 3.41.1341 VI ' y

FR 151 diode

Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Contextual Info: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)

12N08l

Abstract: 2n08 MTP12N10L B 773 transistor 70220AB YLE relay 221A-04 AN569 MTP12N08L yi73
Contextual Info: JUL li JU L 12 ’ 0 0 14=10 FR S P C TECHNOLOGY y : bH HM HK H H X ’- S L K U 1 C E 7 7 3 9 0 7 5 1 8 0 TO 9 0 1 1 4 4 1 1 3 2 7 9 4 4 4 9 P . 0 2 / 0 8 CEN TER2 244 7011 TO P . 02 9 l?33 0?5l80 O rd er th is MOTOROLA b y SEMICONDUCTOR m m d av a s h e e t

T3D 36 diode

Abstract: T3D+36+diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

T3D DIODE

Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

008E-03

Abstract: 2SJ257
Contextual Info: 2SJ257 2Q93_ 2090_ LD Low Drive Series V DSs = 3 0 V P Channel Power MOSFET 4242 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.

Contextual Info: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode

TMOS power FET

Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
Contextual Info: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

AN569

Abstract: SMD310 4p03
Contextual Info: MOTOROLA Order this document by MMFT4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMFT4P03HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistor Motorola Preferred Device MMFT4P03HD is an advanced power MOSFET which utilizes

Contextual Info: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment

72125

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D294 BGO847 Optical receiver module Preliminary specification 1999 Nov 17 Philips Semiconductors Preliminary specification Optical receiver module BGO847 PINNING - SOT115T FEATURES • Improved BGE847BO PIN

Contextual Info: I No.1840 L A 1 1 8 6 N M onolithic Linear IC FF1 Front End for Rad io Cassette , Mu s ic Center SANYO Features and Functions . Contains RF amp, MIX, OSC, AFC diode. . Operating voltage: 1.8 to 8.0V. . Improvement in 2-signal characteristic due to the use of double-balanced

MMSF3300R2

Abstract: MMSF3300R2/D
Contextual Info: MOTOROLA Order this document by MMSF3300R2/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3300R2 WaveFET Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology

CT1R

Abstract: ST1003 ST1007 1N6265 ST1331
Contextual Info: GaAs INFRARED EMITTING DIODE •RÉMNMk ^ U H B OPTOELECTRONICS 1N6265 PACKAGE DIMENSIONS DESCRIPTION The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING FEATURES ■ Good optical to mechanical alignment SYM B O L IN C H E S MIN. MILLIM ETERS

175BGQ030

Abstract: 175BGQ030J Diode HER 207 N-1001
Contextual Info: PD-20997 rev. D 11/99 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics Description/Features The NEW 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in

MMFT3055VLT1

Abstract: MMFT3055VLT3 TMOS E-FET AN569 MMFT3055VL SMD310
Contextual Info: MOTOROLA Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS V SOT-223 for Surface Mount Designer's MMFT3055VL N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

TMOS E-FET

Abstract: AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3 SMD310 A/Detector/"Detector+IC"/"CD"/MMFT3055V
Contextual Info: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS V SOT-223 for Surface Mount Designer's MMFT3055V N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

Contextual Info: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

g36N60a

Abstract: diode fr 307 IF110
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR