45NSEC Search Results

Contextual Info: FAST RECOVERY DIODE 17.7A/300~ 400V/trr : 45nsec C16T30F C16T40F C16T40F-11A ° |SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C16T««F ° Tabless T0-220:C16T40F-11A ° Dual Diodes — Cathode Common o Ultra - Fast Recovery 0 Low Forward Voltage Drop

Contextual Info: FAST RECOVERY DIODE llA /3 0 0 ~ 4 0 0 V /tr r :45nsec C10T30F C10T4QF-11A °|SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C10T««F °Tabless T0-220:C10T40F-11A « Dual Diodes- Cathode Common ° Ultra - Fast Recovery °Low Forward Voltage Drop

Contextual Info: FAST RECOVERY DIODE F16P30FS F16P40FS 17.7A/300— 4 0 0 V /trr : 45nsec FEA TU RES « Similar to TO-220AB Case, Fully Molded Isolation • Dual Diodes - Cathode Common ° Ultra - Fast Recovery • Low Forward Voltage Drop ° High Surge Capability o 100 Volts thru 600 Volts Types Available

Contextual Info: FAST RECOVERY DIODE H A /3 0 0 ~ 4 0 0 V /tr r : 45nsec C10T30F C10T40F C10T40F-11A - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C10T««F ° IsQUARE 0 Tabless T0-220:C10T40F-11A ° Dual Diodes- Cathode Conunon 2.2(.087) U (.071) ° Ultra - Fast Recovery

K358

Abstract: smd diode 101a t06 smd C16T30F C16T40F C16T40F-11A
Contextual Info: FAST RECOVERY DIODE C16T30F C16T40F C16T40F-11A 17.7A/300— 4 0 0 V /trr : 45nsec 4.8 1 1 8 9 . 4.4 .173) L ° SQUARE - PAK TO-263AB (SMD) Packaged in 24mm Tape and Reel : C16T»»F . 1.4(.055 ) _ ' 1.2C 047) 1.4(.055) f 1060417) I 9.6(378) 10.K.398)

F16P30FS

Abstract: F16P40FS
Contextual Info: 1 7 .7 A / 3 0 0 ~ 4 0 0 V / t r r : 45nsec FAST RECOVERY DIODE F16P3 0 FS F16P40 FS F EATU R ES °Similar to T0-220AB Case, Fully Molded Isolation 0 Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop 8 High Surge Capability

C16P30F

Abstract: C16P30FR C16P40F C16P40FR
Contextual Info: FAST RECOVERY DIODE C16P30F C16P40F C16P30FR C16P40FR 17.7A/300— 400V/trr : 45nsec FEATURES ,3 .209 Jtl85î 15.91.6261 3 .6 U 4 2 ) , ° Similar to TO-247AC (TO-3P) Case • Dual Diodes - Cathode Common and Anode Common (Type-R) . « Ultra - Fast Recovery

IMS1223P-25

Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
Contextual Info: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times

Contextual Info: FAST RECOVERY DIODE I 7.7A / 300— 400V/trr:45nsec C16P30FR C16P40FR FEATURES • Similar to TO-247AC TO-3P Case « Dual Diodes - Cathode Common and Anode Common (Type - R) ° Ultra - Fast Recovery • Low Forward Voltage Drop • High Surge Capability

Contextual Info: FAST RECOVERY DIODE 17.7A/300— 4 0 0 V /trr : 45nsec F16P30FS F16P40FS FEATURES » Similar to TO-220AB Case, Fully Molded Isolation 0 Dual Diodes - Cathode Common °Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability ° 100 Volts thru 600 Volts Types Available

C16P40F

Abstract: C16P30F UAA 180 C16P30FR C16P40FR C16P40
Contextual Info: FAST RECOVERY DIODE C16P30F C16P40F C16P30FR C16P40FR 1 7 .7 A /3 0 0 ~ 4 0 0 V /trr : 45nsec FEATURES osimilar to TO-247AC TO-3P Case • Dual Diodes - Cathode Common and Anode Common (Type - R) ° Ultra - Fast Recovery ° Low Forward Voltage Drop High Surge Capability

K358

Abstract: C10T30F C10T40F C10T40F-11A 5a ultra fast diode
Contextual Info: FAST RECOVERY DIODE 11A/300— 4 0 0 V /trr: 45nsec C10T30F C10T40F C10T40F-11A °|SQUARE - PA k | TO-263AB SMD Packaged in 24mm Tape and Reel : C10T»»F 0 Tabless T0-220:C10T40F-11A ° Dual Diodes- Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop

F5KF40

Contextual Info: FAST RECOVERY DIODE 5.5A/300 400V/trr:45nsec 5KF30B F5KF30B 5KF40B F5KF40B FEATURES 0 Similar to T0-220AC and TO-220AB Case ‘ Fully Molded Isolation Case F- Type • Ultra - Fast Recovery ° Low Forward Voltage Drop Efficiency ° Low Power Loss, High ° High Surge Capability

122325

Contextual Info: IMS1223 CMOS High Performance 1K x 4 Static RAM u ilT IO S FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times

C16P40F

Contextual Info: FAST RECOVERY DIODE 17.7A /300~ 400V/trr:45nsec C16P30FR CI6P40FR FEATURES °Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery ° Low Forward Voltage Drop • High Surge Capability ° 100 Volts thru 600 Volts Types Available

Contextual Info: FU JITSU Bipolar Mem ories • M B 7151E /H , M B 7152E /H /Y Schottky TTL 16,384-Bit Bipolar Programmable Read-Only Memory D escription The Fujitsu MB7151 and M87152 are high speed Schottky TTL electrically field program mable read only m emories organized as

PDS-298B

Contextual Info: B U R R - BROWNl 3508J WSM 3508J is s i OPERATIONAL AMPLIFIERS Wideband OPERATIONAL AMPLIFIER FEATURES • lOOmHz BAIN BANDWIDTH PRODUCT • 5nA INPUT BIAS CURENT • 103dB OPEN-LOOP GAIN DESCRIPTION Burr-Brown model 3508J is a wideband operational am plifier intended for use in circuits requiring

2118 intel

Abstract: Intel 2118 2118 dynamic ram intel 2118 FAMILY tcp 8111 2118 ram S6447 2118-15 S6331 2118-10
Contextual Info: intei 2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2118-10 2118-12 Maximum Access Time ns 100 120 150 Read, Write Cycle (ns) 235 270 320 Read-Modify-Write Cycle (ns) 285 320 410 Single +5V Supply, ±10% Tolerance CAS Controlled Output is Three-State, TTL Compatible

Contextual Info: y MN6249 MICRO NETWORKS 2M H z, 12-Bit SAMPLING A/D CONVERTER DESCRIPTION M N 6 2 4 9 is a 2M H z, 12-bit sampling A/D converter which offers outstanding dynam ic as well as static performance. This sampling A /D contains an internal T/H am plifier and a 12-bit, subranging A /D converter in a single, 40-pin, triplewide DIP package. T h e internal T/H am plifier allows the A/D

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.

3508J

Contextual Info: 3508J IS I 3508J B U R R -B R O W N " OPERATIONAL AMPLIFIERS Wideband O P E R A T IO N A L A M PLIFIER FEATURES • lOOmHz 6AIN BANDWIDTH PRODUCT • 5nA INPUT BIAS CURENT • 103dB 0PEN-L00P GAIN DESCRIPTION B urr-B row n m odel 3 5 0 8 J is a w ideband operational

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: MN5245 MN5246 — 1.1 M H z , 1 2 -B it MICRO NETWORKS A /D C O N V E R T E R S DESCRIPTION • 8 5 0 n s e c M axim um Conversion T im e • G u ara n te ed 1.1MHz C onversion Rate • 1M Hz S am p lin g R ate W h e n us ed w ith M N 376 T/H A m p lifie r

sy2149h

Abstract: Synertek SY214 cerdip z PACKAGE 2149H 2149H-2 2149H-3 2149HL 2149HL-3 SYC2149H-2
Contextual Info: ertek. SY2149H 10 2 4 x 4 Static Random Access M em ory Features • 4 5 ns M a x im u m A d dress Access In d u s try S tan d ard 2 1 1 4 P in o u t • F u lly S ta tic O p e ra tio n : T o ta lly T T L C o m p a tib le : N o C locks or S trobes R equired