G8060
Abstract: ruru8060 RUR 0820 TB-01
Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number
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G8060
RURU8060
RURU8060
G8060
RUR 0820
TB-01
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DD1200S33K2C
Abstract: FZ1200R33KF2C BC 2500 ZL 8
Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ &' *+ &' ( )*+ % / /+ $ % 4(! 6 17 ,- ( 9 ,8 4 ( ! 8 &' ( ! )*+ &' ( ! )*+ < ,-.
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DD1200S33K2C
DD1200S33K2C
FZ1200R33KF2C
BC 2500
ZL 8
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* # $ 4'! 6 17 +, ' 9 +8 4 ' !
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DD1200S33K2C
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RT89
Abstract: 4G87 DDB6U75N16W1R
Text: Technische Information / technical information DDB6U75N16W1R IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # ' ' 45 & # $ ! %4 64 4 $ 5 ; ' 4 64 4! %
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DDB6U75N16W1R
RT89
4G87
DDB6U75N16W1R
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1J4J
Abstract: No abstract text available
Text: EGL 1A . EGL 1G power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 49 Surface mount diode Ultrafast silicon rectifier diodes EGL 1A . EGL 1G Forward Current: 1 A
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AL6G
Abstract: No abstract text available
Text: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
AL6G
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thyristor 308
Abstract: No abstract text available
Text: EGL 34A . EGL 34G power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 49 Surface mount diode Ultrafast silicon rectifier diodes EGL 34A . EGL 34G Forward Current: 0,5 A
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DIODE g8
Abstract: BAV170LT1 G8 MARKING
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times . Available in 8 mm Tape and Reel BAV170LT1 Use BAV170LT1 to order the 7 inch/3,000 unit reel
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BAV170LT1
BAV170LT1
BAV170LT3
inch/10
236AB)
DIODE g8
G8 MARKING
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Untitled
Abstract: No abstract text available
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
60-cycle
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marking code 153 DIODE sod 23
Abstract: diode ZENER A8 zener diode n8 X8 diode zener X8 zener ZENER diode Y8 BZT52C2V0K ZENER MARKING C8
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
soldering60
marking code 153 DIODE sod 23
diode ZENER A8
zener diode n8
X8 diode zener
X8 zener
ZENER diode Y8
ZENER MARKING C8
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UPS APC 800 CIRCUIT
Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Text: Laser Diode Products for the OEM INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications
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Diode SJ 44
Abstract: No abstract text available
Text: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $
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MGNOK81(
S1828
64X4D
Diode SJ 44
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thyristor JD
Abstract: No abstract text available
Text: BZW 04-5V8 . BZW 04-376B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter - ? 3 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and
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04-5V8
04-376B
04-5V8.
04-376B
thyristor JD
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M933
Abstract: BZW 10 diode cib 34 73
Text: BZW 06-5V8 . BZW 06-376B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter - ? 3 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and
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06-5V8
06-376B
06-5V8.
06-376B
M933
BZW 10 diode
cib 34 73
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BAV170LT1
Abstract: No abstract text available
Text: Monolithic Dual Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times . Available in 8 mm Tape and Reel BAV170LT1 Use BAV170LT1 to order the 7 inch/3,000 unit reel 3 Use BAV170LT3 to order the 13 inch/10,000 unit reel
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BAV170LT1
BAV170LT1
BAV170LT3
inch/10
236AB)
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%6233236 4C3 &'6 6 *+ &'6(6 )*+
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DD1200S33K2C
03265F
1231423567896AB2C3D6EF32
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 808nm 7.5W Detachable Laser Diode Module Functions: PD,TEC,Thermistor,Detachable Fiber,Aiming Beam, Fiber Detector G808-7.5WD-14HHL-PTFS Features Features Output power: 7.5W Wavelength: 808nm Aiming beam: 650nm Fiber coupling for: 200 m,0.22NA
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808nm
G808-7
5WD-14HHL-PTFS
808nm
650nm
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 830nm Laser Diode Modules G830-1WF-02BCK Features: Output Power : 1W Wavelength: 830nm Fiber core diameter: 60 m 0.14NA Applications Printing 830nm Characteristics 25℃ 1 Germany & Other Countries Laser Components GmbH Tel: +49 8142 2864 – 0
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830nm
G830-1WF-02BCK
830nm
real-light/830nm/g830-1wf-02bck
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ISO 8015 tolerance
Abstract: omron g8HN-1C4T omron g8HN-1C4T-rH g8hn-1a4t-rj g8HN-1a4T omron g8HN-1A4T-RJ g8HN-1C4T-rH g8HN-1C4T g8hn 1c4t G8HN-1A2T-Rh
Text: G8HN Automotive Micro ISO relay General, multi-purpose relay • 12VDC, 24VDC coil • High-wattage • Surge suppression, diode type available • Fully sealed type Protective structure • Bracket and rubber suspension type available • High wattage type meets mini ISO wattage specification
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12VDC,
24VDC
ISO 8015 tolerance
omron g8HN-1C4T
omron g8HN-1C4T-rH
g8hn-1a4t-rj
g8HN-1a4T
omron g8HN-1A4T-RJ
g8HN-1C4T-rH
g8HN-1C4T
g8hn 1c4t
G8HN-1A2T-Rh
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F7422D
Abstract: No abstract text available
Text: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V
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1412H
F7422D
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Untitled
Abstract: No abstract text available
Text: V LASER DIODE DRIVER WITH O UTPUT ENABLE SYNERG Y PRELIMINARY SY100EL1003 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1,25Gb/s operation The SY100EL1003 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC voltage controlled. The modulation current is disabled
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SY100EL1003
25Gb/s
16-pin
SY100EL1003
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Untitled
Abstract: No abstract text available
Text: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw
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3B69720
07C00256
000055b
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diode 1G8
Abstract: nihon diode 1G8
Text: 1A 8 0 0V Axial Lead Type 1 /4 : Type : 1 G8 Nihon Inter Electronics Corporation : I* Constraction: Axial Lead, Diffusion-type Silicon Diode : -«Sniffi Application : For General Use l ü ; * Æ f ê / Maximum Rating m / Voltage Ratings ia * f s Symbol
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11M0JU,
diode 1G8
nihon diode 1G8
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F20L60U
Abstract: 6BT MARKING F20L60 J533 C180A f20l SF20L60U D0.K F20L6 SF20L60
Text: Super Fast Recovery Diode Single Diode •¿m u OUTLINE Package I FTO-220 SF20L60U Unit :m m W eight 1.9« T y p 4.5 600V 20A Feature • raiHŒ FRD • High Voltage Super FRD • e y - r x • Low Noise • trr=35ns • • trr=35ns • Full Molded K •fê S iü Œ 2kVßfiE
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SF20L60U
FTO-220
F20L60U
SF20L60U
110ms
J533-1
F20L60U
6BT MARKING
F20L60
J533
C180A
f20l
D0.K
F20L6
SF20L60
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