DIODE GG 66 Search Results

Contextual Info: 5 /a y h '+ - yiy u JKUT S W -h 5 Schottky Barrier Diode Twin Diode • W I 2 \ f i£ I I ] OUTLINE DIMENSIONS D20SC9M 90V 20A •T jl5 0 ° C • P rrsm 7 7 ^ m •S R S S %DC/DC n y j K — 2 • m m , t f - h s oAggg • I f > 7 ti-^ w *gg RATINGS T c = 25°C

Contextual Info: PDSP16330/A/B HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: 0793 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017,

Legrand transformer

Abstract: legrand 390 61 18 KW motor Legrand* fuses legrand fuse 123 10 bs 3535 diode GG 26 legrand fuse 140 10 aM LEGRAND fuse diode GG 71
Contextual Info: control transformers single phase Conform to IEC/EN 61558-2-2; 2-6 24V and 2-4 (>24V) - UL 506 and CSA 22.2 - No. 66 Single-phase 50-60 Hz - class I Insulation voltage between windings : 4 510 V Max. ambient operating temperature : 60°C Protected against accidental contact with live parts up to 1 000 VA

Legrand transformer

Abstract: Legrand* fuses 18KW motor legrand 390 61 140 10 aM LEGRAND fuse legrand fuse 123 10 legrand bs 3535 115 to 24 2.3 va transformer 18 KW motor
Contextual Info: RS Stock-Nos. 422-9738 ff control transformers single phase Conform to IEC/EN 61558-2-2; 2-6 24V and 2-4 (>24V) - UL 506 and CSA 22.2 - No. 66 Single-phase 50-60 Hz - class I Insulation voltage between windings : 4 510 V Max. ambient operating temperature : 60°C

OC139

Abstract: Low-Power Germanium NPN 2N1694 2N557 2N558 2N147 2N212 2N576 2N634 TR07
Contextual Info: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer V BR CBO Ie Max (A) hFE (V) fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC) Toper Max eC) 2.0m 100 S TO-5 2.5m 100 J 100 J 100 S 100 S 100 J 100 J TO-l TO-5 TO-22var TO-5

mallory 150m

Abstract: AC127 Low-Power Germanium NPN sk3010 2N366 germanium ac127 ASY28 npn 10 a 50 v germanium AC127-01 germanium
Contextual Info: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max lA) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CEO (A) (V) PD Max (W) Derate at Toper (WrC) eC) Max Package Style D vic sUnder 1 Watt, (Co nt' d) 5 • 10 2N438A TA167 TA167 TA167

AF306

Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284

mpc apc

Abstract: CX02066 CX02066B24 CX02066DIEWP CX02066TQ32 CX02066WAFER MAX3869 TQFP32
Contextual Info: CX02066 3.3 Volt Laser Driver IC for Applications to 3 Gbps FEATURES ‰ The CX02066 is a highly integrated, programmable laser driver intended for SONET/SDH applications with FEC to 3 Gbps. Using differential PECL data and clock inputs, the CX02066 supplies the bias and

2U 37 diode

Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2n4889

Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

STi20

Abstract: SK3537
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 >= 40346V2 40346V2 40346V2 DTL1657 2N3583 SPT3440 MPSU04 MPSU04 DTL1638 2N6721 DTl1648 TRS4926 TRS4926 TRS4926 STI2006 MST20B MST20B STI20 STI205 TRS2006 ~~kJgg8 25 30 2N5662 SK3537 2N6722 2N6722

Contextual Info: Final Electrical Specifications r r u n LTC1473 Dual PowerPath Switch Driver m TECHNOLOGY February 1997 FCRTURCS DCSCRIPTIOn • Power Path Management for Systems with Multiple DC Sources ■ All N-Channel Switching to Reduce Power Losses and System Cost

PT8809

Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita

LTC1161

Abstract: LS105
Contextual Info: Final Electrical Specifications u f m TECHNOLOGY LTC1473L Dual Low Voltage PowerPath Switch Driver February 1999 FCRTURCS DCSCRIPTIOn • Switches and Isolates Sources from 3.3V to 10V ■ Power Path Management for Systems with Multiple DC Sources ■ All N-Channel Switching to Reduce Power Losses

diode GG 79

Abstract: HSCH-5511 HSCH5530 HSCH-5531 HSCH5510
Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The Antiparallel Pair The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly

Diode SE-05

Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were

HSCH5530

Abstract: HSCH5511 HSCH-5531 HSCH-5511
Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were

S14936DY

Contextual Info: Q IM O TD ^L [ F & E ^ S I Final Electrical Specifications u m TECHNOLOGY LTC1479 PowerPath C ontroller for Dual Battery Systems D ecem ber 1996 f€ATUA€S DCSCRIPTIOH • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup

10 35 DIODE

Abstract: BFT19B diode 15 35
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

MRF212

Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413

D1192

Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect

B0679

Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52