DIODE GG 71 Search Results

Contextual Info: Schottky Barrier Diode Single Diode W tm D5S9M OUTLINE 90V 5A Feature • Tj=150°C • Tj= 1 5 0°C • P rrsm • 71 [ Æ - J U K Rating • Full M o ld e d Main Use • S w itc h in g R eg u lator • DC/DC □ V A'—^ • D C /D C C o n ve rte r •mm, i f - A .oA d gg

diode GG 64

Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO

044H11

Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S

bcy591x

Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

2n185

Abstract: BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434

mpc apc

Abstract: CX02066 CX02066B24 CX02066DIEWP CX02066TQ32 CX02066WAFER MAX3869 TQFP32
Contextual Info: CX02066 3.3 Volt Laser Driver IC for Applications to 3 Gbps FEATURES ‰ The CX02066 is a highly integrated, programmable laser driver intended for SONET/SDH applications with FEC to 3 Gbps. Using differential PECL data and clock inputs, the CX02066 supplies the bias and

2N4007 diode

Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995

diode GG 79

Abstract: HSCH-5511 HSCH5530 HSCH-5531 HSCH5510
Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The Antiparallel Pair The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly

Diode SE-05

Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were

HSCH5530

Abstract: HSCH5511 HSCH-5531 HSCH-5511
Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were

SF30BG

Abstract: SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG SF30AG
Contextual Info: SF30AG–SF30JG Vishay Lite–On Power Semiconductor 3.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage

SF20CG

Abstract: SF20AG SF20BG SF20DG SF20FG SF20GG SF20HG SF20JG
Contextual Info: SF20AG–SF20JG Vishay Lite–On Power Semiconductor 2.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage

2SC1312

Abstract: 2SC1840E BA 92 SAMSUNG TI480 2N2888 LOW-POWER SILICON NPN 2SC900 PET8002 2N2856 25M SOT89
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 5 -10 NB211XJ NB211YJ MMBC1622D7 MMBC1622D7 MMBC1622D7 2SC1840F 2SCl840F NBOllEU NBOllFU NB013EU ~gg~~~~ -15 20 NBOllFK NB013EK NB013FK NB013FL PET8002 PET8004 MMBC1622D8 MMBC1622D8 TMPT1622000 25 30 2SC1840E 2SCl840E

D1192

Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect

Designs for negative Voltage Regulators

Contextual Info: SG120 NEGATIVE FIXED VOLTAGE REGULATOR DESCRIPTION FEATURES The SG120 series of negative regulators offer self-contained, fixed-voltage capability with up to 1.5A of load current. With a variety of output voltages and four package options this regulator series is an optimum complement to the SG7800A/

Low-Power Germanium PNP

Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67

C322 diode

Abstract: 12n05 p12n05 SEFM12H05
Contextual Info: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS

diode GG 71

Abstract: Stand Alone FFT Processor diode GG 79 l3915 diode GG 64 PDSP16112 PDSP16116 m15m0 PDSP16330 PDSP16330A
Contextual Info: P B y G E C PLESSEY ADVANCE INFORMATION 0S3884 • 1.1 P D S P 1 6 3 3 0 /A /B PYTHAGORAS PROCESSOR Supersedes verston in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1 The PDSP16330 is a high speed digital CMOS IC that converts Cartesian data (Real and Imaginary) intoPolarform

Contextual Info: GEC PLESSEY ADVANCE INFORMATION S t* M I C O IN D U C T O K S P D S P 1 6 3 3 0 /A /B PYTHAGORAS PROCESSOR Supersedes version in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1 The PDSP16330 is a high speed digital CMOS IC that

Contextual Info: P JpJ G E C PLESSEY PRELIM INA R Y INFORMATION DS36&4 - 1.0 PDSP16330/A/B PYTHAGORAS PROCESSOR The PDSP16330 is a high speed digital CMOS ICthat converts Cartesian data Real and Imaginary into Polar form (Magnitude and Phase), at rates up to 20MHz. Cartesian

gc 5.5V 1.0F

Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
Contextual Info: MXED101 30V, 192-Channel OLED Display Driver General Description Features: • CMOS technology • 192 Precision outputs • Programmable output current control • Optimized adjacent channel and chip-to-chip output matching • 3.3V or 5V logic supply voltage

Contextual Info: PDSP16330/A/B HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: 0793 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017,

2N904

Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

Legrand transformer

Abstract: legrand 390 61 18 KW motor Legrand* fuses legrand fuse 123 10 bs 3535 diode GG 26 legrand fuse 140 10 aM LEGRAND fuse diode GG 71
Contextual Info: control transformers single phase Conform to IEC/EN 61558-2-2; 2-6 24V and 2-4 (>24V) - UL 506 and CSA 22.2 - No. 66 Single-phase 50-60 Hz - class I Insulation voltage between windings : 4 510 V Max. ambient operating temperature : 60°C Protected against accidental contact with live parts up to 1 000 VA