2N633 Search Results

2N6339

Abstract: 2N6340 2N6338 2N6341 2N6436
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

2n6338 MOTOROLA

Contextual Info: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA H igh-P ow er NPN Silicon Transistors . . . designed for use in industrial—military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —

GE C106Y

Abstract: SFOR1A42 TO-202AB To226AB DRA03A 2SF101B TO202AB 2SF101 SN200 HS34S
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 MMBS5060 BRX44 BRX44 C103Y C203Y S1Y BRY55•30 BRY55S30 MCR102 2N5060 ~~~gg1 15 20 S031E C205Y C205Y C205Y 2N1876A 2N1876 2N1870 2N1870A ~~3~1~1 25 30 2N3559 C106Y SN200 2N6332 C107Y2 C107Y4

2N3265

Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
Contextual Info: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00

Contextual Info: m 2N6338 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6338 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3/TO-204AA U I *J MAX. I MAXIMUM RATINGS 25 A lc 50 A PEAK 100 V V ce 200 W @ Tc = 25 °C

AP1020

Abstract: 2N4398 2N4399 2N6329 2N6330 2N6331 AP1021 AP1048 AP1049 AP1050
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC 26C 0 0 2 3 8 ' Sb D yZ-SS-TX DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050

Contextual Info: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

equivalent to tip162

Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338

5305da

Abstract: 5305d 2N6329 2N6330 2n6331
Contextual Info: T Y P E S 2N6329, 2N6330, 2N6331 P-N -P S IN G L E -D IF F U S E D M ES A SILICON P O W ER T R A N S IS T O R S IB H C -< FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25° C Case Temperature

2n6337

Abstract: 2N6334 2N6332 2N6336
Contextual Info: TYPES 2N6332 THRU 2N6337 PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS • High Operating Temperatures • High Surge Current Capability • Fast Switching Speeds • Low Forward Voltage Drop TYPES 2N6332 THRU 2N6337 BULLETIN NO. DL-S 7211633, JANUARY

2N6341

Abstract: 2N6338G 2N6338 2N6341G
Contextual Info: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341

2N6339

Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D
Contextual Info: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —

BUT36

Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts

Contextual Info: 2N6338X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5330

Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
Contextual Info: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts

1501-33

Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
Contextual Info: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001

Low-Power Germanium PNP

Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67

1N4933

Abstract: 2N6338 2N6341
Contextual Info: ON Semiconductort High−Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338

2N2820

Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
Contextual Info: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63

2N4398

Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Contextual Info: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3

2N6341

Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor
Contextual Info: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage

2N5330

Contextual Info: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100