DIODE GP20 Search Results

GP20DL

Abstract: DO-204AC
Contextual Info: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

DO-204AC

Contextual Info: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

DO-204AC

Contextual Info: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20JL Low VF Rectifier Diode OUTLINE DIMENSIONS Case : DO-204AC 6.7 ± 0.9 3.1 ± 0.5 DIA. APPLICATION * General purpose rectification * Surge absorption 0.78 ± 0.08 DIA. Unit : mm 25.4 MIN. GPRC Glass passivated rectifier chip inside

GP20DL

Abstract: GP20GL GP20JL GP20KL GP20ML
Contextual Info: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway

Contextual Info: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway

p30b diode

Abstract: GP30AG GP20AG GP10A diode
Contextual Info: GLASS PASSIVATED AXIAL LEAD SILICON SUPER DIODE PIV Peak inverse V o lta ge typ e M AX AVG R e c tifie d C urre n t H alfW a ve Res. Load 60Hz - Ï - - 10 '"TA VPK A AV ¡MAX FW D Peak| M A X R everse S urge C urre n t C urre n t 1 ' 60H Z «< PIV V o lta g e

INFORMATION OF IC 7424

Abstract: 9C1S DIM200MKS12-A000 GP200MKS12
Contextual Info: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MKS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.1 November 2002 KEY PARAMETERS VCES typ VCE(sat)*

INFORMATION OF IC 7424

Abstract: IC 4560 CIRCUIT DIAGRAM DIM200MLS12-A000 GP200MLS12
Contextual Info: DIM200MLS12-A000 DIM200MLS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MLS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5553-1.1 November 2002 KEY PARAMETERS VCES typ VCE(sat)*

INFORMATION OF IC 7424

Contextual Info: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MKS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*

AN4502

Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS

AN4502

Abstract: AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421
Contextual Info: GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES • Internally Configured With Lower Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS

half bridge circuit diagram

Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
Contextual Info: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

AN4502

Abstract: AN4503 AN4505 AN4506 GP201MHS18
Contextual Info: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters

AN5190

Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Contextual Info: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ

Contextual Info: GEC P LE SS EY Si S E M I C O N D U C T O R S DS4326-3.1 GP2000FSS06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS v¥ c e s 600V v CE sal 2.1V 1 2000A C(CONT) 1 4000A C(PK) 290ns tr 430ns t. APPLICATIONS • High Power Switching. ■ Motor Control.

20C1D

Abstract: GP2030S
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/10 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 60m N-CH ID 2.6A P-CH BVDSS -20V N-CH RDS(ON) 80m N-CH ID -2.3A GP2030S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP2000FSS06S ADVANCE ENGINEERING DATA DS4326-3.1 GP2000FSS06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 2000A IC(CONT) 4000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: GEC PLESS EY S E M I C O N D U C T O R S DS4339-4.2 GP200MHB12S POWERUNE N-CHANNELIGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS v CES 1200V V* CE sat 2.8V 200A S conti

d137 smd diode

Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
Contextual Info: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D

RGP15G diode

Abstract: diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A D0204AP G1854
Contextual Info: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECO VERY SILIC O N RECT IFIERS continued 2.0 1.5 IM A ] D0204AP DO 15 PKG TYPE ( (Ì GP20 % r \i D0204AP 00201AP (k <^ VRRM (volts) D0204AP l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P

GP200

Abstract: GP200 - GP210 GP201 GP202 GP204 GP206 GP208 GP210
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 2 AMP SOFT GLASS PASSIVATED DIODES MECHANICAL SPECIFICATION FEATURES SERIES GP200 - GP210 ACTUAL SIZE OF DO-41 PACKAGE

GP20N40CL

Abstract: transistor tl 430 c
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

GP20N

Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) T his Logic Level Insulated G ate B ip o la r T ra n s is to r (IG BT)