DIODE H8 Search Results

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

electrostatic precipitator

Abstract: SHELL DIALA D H850
Contextual Info: MICROSEMI CORP/ MICRO 5bE » • bllSTG? OGDlMTa 132 ■ PIÛL M IC R 0 Q U A L IT Y / SEMICONDUCTOR, INC Fast Recovery High Voltage Power Rectifier Subassembly Diode H850 The H850 subassembly diode is designed for use in the buildup of high voltage power rectifier assemblies. Total

6hx ic

Abstract: nichicon lf HD4s
Contextual Info: HYBRID I.C.s “Hi-Net” n ic liic o n Diode Arrays H High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

M8 3F

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

PS-4512 diode

Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: MICRO jaUALITY / S E M IC O N D U C T O R , INC. Fast Recovery High Voltage Power Rectifier Subassembly Diode H850 Th e H 8 5 0 subassem bly diode is designed for use in the buildup of high voltage power rectifier assem blies. Total assem bly cost is greatly reduced by the use of diodes with

FS30R06W1E3

Abstract: qsq100
Contextual Info: Technische Information / technical information FS30R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC * +

T 3512 H diode

Abstract: ASEA fast thyristor ASEA thyristor diode T 3512 H ABB thyristor modules E 72873 ASEA abb diode ABB thyristor 5 TO 48 THYRISTOR FAST SWITCHING ABB Thyristor asea
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-M odule D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor m odules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

FF100R12MT4

Contextual Info: Technische Information / technical information FF100R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

.120-80 uns

Abstract: 280/buss 2A
Contextual Info: Johanson Phasa-Trim# Adjustable Microwave Diode Holders 3 l©T^p description Johanson Microwave Diode Holders are an efficient and inexpensive means of securing and tuning microwave diodes into precise attitudes for optimum circuit performance. The self­

Contextual Info: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A ­Wide zener voltage range selection : 2.0V to 75V ­Surface device type mounting ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate

H8 SOT-23

Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum

TPC6D03

Contextual Info: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications • Unit: mm A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package.

marking code 153 DIODE sod 23

Abstract: diode ZENER A8 zener diode n8 X8 diode zener X8 zener ZENER diode Y8 BZT52C2V0K ZENER MARKING C8
Contextual Info: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A —Wide zener voltage range selection : 2.0V to 75V —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

TPC6D03

Contextual Info: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications • Unit: mm A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package.

TPC6D03

Contextual Info: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • A PNP transistor and a Schottky barrier diode are housed on a compact and slim package.

Contextual Info: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package.

Contextual Info: U-UTs^ ^ t- K Super F ast Recovery Diode Single Diode OUTLINE DIMENSIONS D8L60 Case : ITO-220 600V 8A • B B Œ • tr r 7 0 n s • 7 J l/ E - J b K •PFC •SRB • 7 U -7 t w ju • T V + B , H8Œ • Ë fë ü RATINGS • ÎÊ J 'f J t ^ S È f ë

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

h8 diode zener

Abstract: diode marking code h6 cmoz18v diode J2 marking code CMOZ12V marking J4 diode DIODE MARKING CODE H7
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™