DIODE HER 107 Search Results

16N60G

Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
Contextual Info: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

HER 107 diode

Abstract: 2SK3772-01 2SK3772 sec1818
Contextual Info: DATE CHECKED Oct.-02-'03 CHECKED Oct.-02-'03 NAME DWG.NO. This mat erial and the information her ein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: HER101 – HER108 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

HER 300 diode

Abstract: 101G 103G 105G 106G HER101G HER108G her105g diode
Contextual Info: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

HER 107 diode

Abstract: DIODE HER108 HER 103 diode Diode HER 107 HER101 HER101-T3 HER101-TB HER104 HER105 HER108
Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

c program for 8*8 DOT LED MATRIX display

Abstract: led matrix display in 8051 "circular polarizer" hncp 37 c program of LED dot matrix display 5x7 2 color led interface with 8051 LED Display Theory 16*32 LED Matrix HDSP2003LP HER 107 diode u8051
Contextual Info: Designing with the Small AlphaNumeric Display Appnote 44 By Bob Krause and Dave Takagishi Introduction Display Operation The Siemens Small AlphaNumeric SAN Display family is one of the most versatile and flexible LED readout systems available today. Its four 5x7 characters are dot addressable permitting alphanumeric, graphics, and special symbols to be easily

HNCP37

Abstract: HDSP2003LP 16*32 LED Matrix ISD2353 polaroid ISD2013 ALPHANUMERIC DISPLAY image isd 2311 HDSP2000LP HDSP2001LP
Contextual Info: Designing with the Small AlphaNumeric Display Appnote 44 By Bob Krause Introduction Display Operation The OSRAM Small AlphaNumeric SAN Display family is one of the most versatile and flexible LED readout systems available today. Its four 5x7 characters are dot addressable permitting

Contextual Info: BSS816NW OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 160 mΩ V GS=1.8 V 240 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSS214NW OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 1.5 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSS214N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 1.5 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: PRODUCT DATASHEET AAT1271 SwitchRegTM 1.5A Step-Up Current Regulator for Flash LEDs Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1271 is a high- efficiency, high- current boost convert er capable of 1.5A t ypical out put current . I t is an ideal power solut ion for LED phot o flash applicat ions in

Contextual Info: DIFFUSED T-100 SOLID STATE LAMPS OPTOELECTRONICS RED YELLOW HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED PACKAGE DIMENSIONS MV50640 MV5364X MV5464X/HLMP-15X3 MV5764X/HLMP-130X DESCRIPTION These solid state indicators offer a variety of color selection. The High Efficiency Red and Yellow devices

Contextual Info: International IQ R Rectifie r PD -5.062 G A75T S 120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK -• 3 Featu res r • G en eratio n 4 IG BT te ch n o lo g y • U ltra F a st: O p tim ize d fo r high operating fre q u e n cie s 8-40 kHz in hard sw itch ing , >200

Contextual Info: I I . • I n t e r n a t io n a l I IOR Rectifier PD -5.05 7C preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A300TD 60U Ultra-Fast Speed IGBT F eat ur es • G en eratio n 4 IG BT te ch n o lo g y V • U ltra F a st: O p tim ize d fo r high op era ting

IC5359

Abstract: DS7060 IC5343 1C5367 IC5373 1C5335 1C5336 1C5337 1C5338 1C5339
Contextual Info: o I Zener ZENER + REGULATOR DIODE @ For Use in Compact and High Performance ~ Up to 180 Watt Surge Rating and Cathode and Thermosonic *t\ CHIPS Circuits @ 8.3 ms @ Silicon-Oxide-Passivated Junctions Environmental Conditions 9 Anode I chips for Resistance Metallization

MIL-D-87157

Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
Contextual Info: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

MPC 2120

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D S IE M E N S re d YELLOW h igh EFF. RED HIGH EFF. GREEN fl23SbGS OOSb^^a 3 • SIEG MSD201OTXV/TXVB Hsa MSD2011TXV/TXVB MSD2012TXV/TXVB MSD2013TXV/TXVB .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

Contextual Info: SIEM ENS OPTO ' 44E D • 0S3b3Eb 00Ü4Û13 Q Ö1SIEX MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB high e f f . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB re d .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display Package Dimensions in Inches mm

AD5820

Abstract: DC-DC Converter Burr-Brown 700 diac having break over voltage 6v DIAC Br100 IRF3803 AD5802U HLMP-D400 transistor IC LM35 working TRANSFORMERLESS 30W HIGH POWER LED driver car battery charger using scr
Contextual Info: INDEX Order Code Description Manufacturer AD5802U AD582OU INA116PA PGA207PA OPA655xP OPA655P 12-Bit, 10 MHz Sampling Analog-to-Digital Converter 10-Bit, 20 MHz Sampling Analog-to-Digital Converter Ultra Low Input Bias Current Instrumentation Amplifier High-Speed Programmable Gain Instrumentation Amplifier

transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­

heds 7500

Abstract: HEDs-7500 0103NN heds7500 HEDS-5000 HEDS-6000 motor IG 2200 53 X 000 41 R Packard type 56 connectors IC 74LS14 for IR transmission opm amplifier 741 ic
Contextual Info: ADVANCED SEMICONDUCTOR T T du. I * i B— B — a li n a j « w a g a — a r in- a iin r r inwrr»TwiTBiT« r n w w . ne s * im — n— DEVICES H t iV L t / / PA C KA R D ^ S E M IN A R O C TO B E R 1 9 8 8 PART I I LED 'S / D IS P LA YS D IG IT A L MOTION CONTROL