DIODE IR 132 E Search Results

IRF5303

Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
Contextual Info: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area

Contextual Info: 4302571 00530^3 AMI • S] HARRIS HAS IRF15 0 /1 5 1 /1 5 2 /1 53 IRF15 OR/151R/152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Q 4A E • 33A and 40A, 60V - 100V • r0S on = 0 .0 5 5 fl and 0 .0 8 il y SOURCE

circuits of IRF150

Abstract: IRF150-152
Contextual Info: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*

MOSFET IRF150

Abstract: IRF150 MOSFET HA711
Contextual Info: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International

4433 mosfet

Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Contextual Info: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package T0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *

IRF150

Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
Contextual Info: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153

5LC20U

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR 200V 5A r n y 't'X > trr35n s >SRS;H >^BsOAw0, ^ miBs FA RATINGS Absolute Maximum Ratings a i s E-fS ym bo l Conditions a Item Storage Temperature Operating Junction Temperature

Contextual Info: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*

IRF150R

Abstract: IRF151R IRF152R IRF153R
Contextual Info: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

UL1385

Abstract: IRKL1 IRK.L1 D243 D244 D245 NSD245 70Dir
Contextual Info: International S Rectifier SERIES IRK.L131/132 FAST RECOVERY DIODES NEW INT-A-pak Power Modules Features • ■ ■ ■ ■ ■ ■ ■ 140A Fast recovery tim e characteristics E lectrica lly isolated base plate Industrial standard package S im plified m echanical designs,

Contextual Info: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DE10SC4 Package I E i'ivO Standard soldering pad 40 V 10 A : ±o.i Tolerance: ±0.1 •S M D 0.5±al • T jl5 0 ° C # P rrsm ^ t j y 'j I f fiti • im - x m z a m m 0.1±al m m • S R S ÎÜ

1rf9530

Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n

BYQ28

Abstract: BYQ28E Series BYQ28E diode 119
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28E series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast

IRF162

Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: TFS7701-7708 HiperTFS-2 Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High-Voltage MOSFETs Product Enhancements • • Selectable 132 kHz main switching frequency for lower cost and smaller magnetics Increased main peak power vs. HiperTFS-1

missile seeker

Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Contextual Info: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —

UL1385

Abstract: D243 D244 D245 IRKL1
Contextual Info: MÛ5SMS2 D01b71ô International IS Rectifier SERIES IRK.L131/132 NEW INT-A-pak Power Modules FAST RECOVERY DIODES INTERNATIONAL T17 • INR RECTIFIER bS E Features I Fast recovery time characteristics I Electrically isolated base plate Industrial standard package

AN-32

Abstract: Power Integrations UTV817A LTV702FB LTV703FB Transformer ei33 EEL16 EI33 bobbin EI40 transformer liteon transformer
Contextual Info: ® TOPSwitch-GX Flyback Design Methodology Application Note AN-32 Designing an off-line power supply involves many aspects of electrical engineering: analog and digital circuits, bipolar and MOS power device characteristics, magnetics, thermal considerations, safety requirements, control loop stability, etc.

DE10SC4

Contextual Info: SHINDENGEN Schottky Rectifiers SBD DE10SC4 Dual OUTLINE DIMENSIONS Case : E-pack Unit : mm 40V 10A FEATURES SMT Tj150 PRRSM avalanche guaranteed High current capacity with Small Package APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment

DE10SC4

Contextual Info: SHINDENGEN Schottky Rectifiers SBD DE10SC4 Dual OUTLINE DIMENSIONS Case : E-pack Unit : mm 40V 10A FEATURES ● SMT ● Tj150℃ ● PRRSM ● High avalanche guaranteed current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter

diode sy 171 10

Abstract: diode sy 170/10
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,

Contextual Info: Philips Semiconductors Product specification Rectifier diodes * BYV40E series ultrafast, rugged_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, rugged dual rectifier diodes in a plastic envelope

AAAZ

Contextual Info: TOSHIBA {D ISCR ET E/OPTO} Ti 9097250 TOSHIBA DISCRETE/OPTO //osh'thu DE'I ^ 7 2 5 0 0Qlfe,77b fc, T 99D 16776 DTS^-IS TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: National Semiconductor MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLMl 13-2 -X R E V 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode.