DIODE IR 1F Search Results

Contextual Info: International I O iR Rectifier Fast Recovery Diodes Fax on Demand Number 1FSM Part Number V RRM V •fav@ tc (A) (C) 50 Hi 60Hz (A) (A) (VI ^ QIC (DC) (K/W) Diode/Diode t„ (nS) Notes Case Outline Key Center Tap Circuit Common Cathode INT-A-Pak IR K C L I3 2 - 0 6 S 1 0

1310nm otdr

Contextual Info: PRELIMINARY NEC / _ / DATA SHEET LASER DIODE MODULE NDL7513P.NDL7513P1 InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C mA V *C 'C *C Ir P 600 Pulsed Forward Current*l Vr 2.0 Reverse Voltage

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

6ri30g-160

Contextual Info: DIODE MODULES Ratings and Specifications 1600 volts class general use diode modules/G series i Device type V rrm V rsm lo Ifsm Ft A m ps. A m ps. A^s V im Ir r m Rth j-c • P ackage N et m ass G ram s In te rn a l c ir c u it P age 58 V o lts V o lts V o lts

siemens sda 2208

Abstract: Q67000-A8235 14CE1-5 block diagram for simple IR transmitter
Contextual Info: SIEM ENS IR Remote Control Transmitter with IR Diode Driver Preliminary Data SDA 2208-3 Bipolar 1C The SDA 2208-3 is designed as a remote control transm itter for direct driving of infrared transm itter diodes. The instructions are generated by an input matrix i. e. keyboard in the

SIR34ST3

Contextual Info: MDE D ROHM CO LTD • 7020^*1 GOGbflb? 4 ■ RHM Page lu n ir n Specification Products Type [ ol ^ SIR-34ST3 SIR-34ST3 GaAs INFRARED EMITTING DIODE The SIR-34ST3 is a gallium arsenide infrared diode with transparent plastic encapsulation. The device is designed to accomodate needs of optical remote control

smd kir

Abstract: DIODE MARKING 9Y smd code marking book DIODE SMD CODE MARKING LG smd diode code 1_b DG1J10A J532 smd diode schottky code marking 1A smd code marking vk YJ-7
Contextual Info: Schottky Barrier Diode Single Diode m tm DG1J10A 100V n • iiS'JviySMD Weight 0.011 g Typ 1A 3.5 1 U ltra -sm all S M D • fílR = 1 L o w Ir =100|j A m 100/l/A (?) CD r • i2j®sy=0.8mm • U nit-m m Package : G 1F Feature a OUTLINE 1 1J71 1 QD°

Contextual Info: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM

GE SCR M anual

Contextual Info: MEASUREMENT OF OPTOELECTRONIC DEVICE PARAMETERS IRED PA R A M ETER S M easurem ent o f IR E D param eters is relatively straight forw ard, since the electrical param eters are those o f a diode. T hey can be m easured on test equipm ent used to m easure diode param eters, from the

smd diode schottky code marking 1A

Abstract: marking code SMD xf smd marking XF diode MARKING CODE A9
Contextual Info: Schottky Barrier Diode Single Diode mtm D1 FJ10 OUTLINE U n it-m m Package : 1F W eight 0.058g T y p i) / Ccilhode mark 100V 1A Feature (< • /J v g y S M D • S m all S M D • Tj=150°C • T j= 1 5 0 °C • •(SIr= 0 .2 m A • L o w Ir = 0 .2 itiA

Contextual Info: Temic TSSS2600 S e m i c o n d u c t o r s GaAs IR Emitting Diode in Side View Miniature Package Description T SSS2600 is a m iniature infrared em itting diode in G aA s on G aA s technology, m olded in a clear, untinted plastic package w ith cylindrical side view lens.

1N60 diode

Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
Contextual Info: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir

Contextual Info: Schottky Barrier Diode Single Diode D1FJ10 Unit ‘ mm Package I 1F Weight 0.058g Typ Ä V -K v -? 1 0 0 V 1A Feature • /J ^ S M D • Ir= CD*— M — • S m all S M D 0.2mA • L o w lft=0 .2 m A Main Use • S w itc h in g R eg u la to r • D C /D C D V K -^

smd diode schottky code marking 2F

Abstract: DG1N15A smd diode 5H J532 DIODE MARKING 9Y 1N711
Contextual Info: Schottky Barrier Diode Single Diode m tm DG 1 N 15A Weight 0.011 g Typ 3.5 CD r Feature a 1Ultra-small SMD • i2j®sy=0.8mm 1Ultra-thin PKG=0.8mm • < S I r = 0 .0 5 m A 1Low Ir = 0 .0 5 itiA L»[c_ <. Lì m (?) I |N 7 1 1 • ^JvS S M D • Unit-m m

Contextual Info: Schottky Barrier Diode single Diode mwm o u t lin e Package : M1F M1FP3 » y -K -r-» 30V 1.29A Feature C a th o d e n w ir k |P 6 N • /J ^ S M D • Small SMD • Ì81S V f =0.4V • Ultra-Low V f=0.4V I — w — ^P yM dfr W T ype No. Main Use Date code

TCST2001

Abstract: telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001
Contextual Info: TELEFUNKEN EL EC TR O N I C W fi^SüO^b Q007&3R b m k L G G J> TCST 1000 up to TCST 4001 tniQJltRLDKlCSiCÌI electronic _• ~7^ y / - 7 3 Creative Technologies Optoelectronic Interrupter without Aperture Construction: Emitter: GaAs-IR Emitting Diode

Contextual Info: International IQR Rectifier Fast Recovery Diodes Fax on Demand Number *FSM Part V RRM Number V 1FAV @ TC (A) (C) SO Hz 60Hz (A) (A) (V) R 0IC(DC) t„ (K/W) (nS) Notes Case Outline Key Diode MAGN-A-Pak IR K E L 2 4 0 -2 0 S 3 0 2000 240 100 6300 6600 1.71

AU155

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE S F 1 5 N C 1 5 M 150 V 15 A F eatu re • T j= 150“C • • Tj=150°C • Full M olded K y j i s t - i b • Low Ir = 0 .3 itiA • lR = 0 .3 m A • Resistance for thermal run-away • « « M S 2kVßfiE • Dielectric Strength 2kV

Contextual Info: IDIOTI i s t i January 7, 1998 RECTIFIER, 1kV, 1.6A, 150ns TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE • PFRO Q UIC K REFERENCE DATA • Vr = * If = * trr = • Ir = Low reverse recovery time

Contextual Info: î / a v b * - J a ils' m Schottky Barrier Diode Sin gle Diode S u rfa c e Mount OUTLINE DIMENSIONS M1FJ4 40 V 1.5 A >/J\§kSMD >Tjl50°C MS Ir = 0.05 m A >SRBÜ >D C /D C m m s t f - h s o a h §5 »&<§. RATINGS •lÊ Î Î I i^ /Ë fê a A bsolute M aximum R atin gs i s S i5:v'i|f'gJi f t

Contextual Info: INFRARED EMITTING DIODE GaALAs AL1F1 A L - 1 F H i, DIMENSIONS (Unit:mm) h '£ f t f c « t B r t G a A iA s t - K T to k *> 6 ^ 7 . The A L-1F1 is a high-power G a A £ A s IR E D mounted in a clear p lastic package, whose low profile perm its very accurate centering of light source. Designed for autom a­

DIODE ku 1490

Abstract: ku 1490 Diode C 1320 tyristor 1F60A-120F 1F60A-120R 2BI100E-004 2BI200E-004C 2BI60E-004 ERG28-12
Contextual Info: C O LL ME R S E M I C O N D U C T O R INC MAE D • 2 2 3 0 7 1 2 D D D l b 4 4 751 ■ C O L t ^ - o ^ ¿ J High voltage fast recovery diode for snubber circuit Non-insulated Device type V hrm V rsm I f ia v i If s m l2t V fm Ir r m trr Rth(j-C) Am ps.

Contextual Info: Optointerrupter Specifications H23A1, H23A2 Matched Emitter-Detector Pair GaAs Infrared Emitting Diode and NPN Silicon Phototransistor 5V M T h e H 23A 1 is a m a tc h e d e m itte r -d e te c to r p a ir w h ich co n sis ts o f a g a lliu m a r s e n id e in fr a r e d e m ittin g d io d e a n d a silic o n

HFA45HI60C

Abstract: hexfred transistor k31 ANSI 45 rectifier
Contextual Info: PD-2.380 International ÜH Rectifier HEXFRED Provisional Data Sheet HFA45HI60C u l t r a f a s t , s o f t RECOVERY DIODE Units Characteristics Vbr per leg 600 600V, 45A Features: Major Ratings and Characteristics V 1F(AV) 45' A t rr (per leg) 75 ns Q rr (per leg)