DIODE ITT 157 BA Search Results

ITT BA159

Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Contextual Info: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case

vaillant

Abstract: Future Electronique ITT Semiconductors SF00500 ITT DIODE 87 BKC Semiconductors F9222 nedis
Contextual Info: ITT Semiconductors Sales Offices / Distributors / Agents ITT Semiconductors Distributors / Agents France ITT Semiconductors France 157, rue des Blains F-92220 Bagneux Tel. 1 4 5 4 7 8 1 8 1 Fax (1 )4 5 4 7 8 3 9 2 Australia CRUSADER Electronic Components Pty. Ltd.

HFA35HB60

Contextual Info: PD-20379 HFA35HB60 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VF = 1.75V

HFA35HB120

Contextual Info: PD-20370 HFA35HB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets

Contextual Info: bitemational [g»lRectifier HEXFET Power MOSFET • • • • • • • PD -9.1225 IRFD310 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d s s = 400V

CK1055

Abstract: aerd gas diode marking eB diode marking code EZ Raytheon Company ETD 2 PLUS subminiature tubes
Contextual Info: rÄ Tech.nical Information on TECHNICAL INFORM ATION CK1055 SUBMINIATURE GAS DIODE SER VIC E MECHANICAL DATA The C K 10 55 is a cold cathode, g a s - ti ll e d diode of sub mi niature c o n s tr u c ti o n , desig ne d for service as a v olt ag e re gulato r tube. It has an op erat in g cu rren t range of 75 to 300 microampe res over which

sla 4038

Abstract: 4008 ic for 8bit full adder 4094 bp 4014 bp 2W21 sla 4051 IC4116 4068 BP tc 4030 IC 4093 bp
Contextual Info: ¡7] 1. C2MOS Standard Package Components Features o f The C 2MOS 1 The TC4xxxB Series C2MOS are designed and manufactured with the ratings and characteristics defined by the EIA/JEDEC standards. Specifically, these include basic requirements such as: Compatibility with wide supply voltage range. (3V to 18V)

SCR induction furnace circuit diagram

Abstract: schematic diagram power inverter 1500w schematic diagram inverter 2000w 1200W inverter "circuit diagram" sc146d Triac cross reference scr 106d 12v to 220v inverter schematic diagram 2000w 220v DC MOTOR SPEED CONTROLLER using opto coupler 12 volt dc to 220v ac inverter 1500w schematic diagram solar tracker circuits
Contextual Info: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , 0 .3 A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 150 A COLD

Triac SC141D

Abstract: Opto triac ot 195 schematic diagram inverter 2000w schematic diagram power inverter 1500w 12v 1200W DC POWER SUPPLY SCHEMATIC scr 106d st4 diac solar tracking street light system schematic diagram of 2000W induction heater 400W sine wave inverter circuit diagram
Contextual Info: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , Q.3A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 1 BOA COLD

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

"MARKING SO-8"

Abstract: 201 319 TPP25011 TPP25012
Contextual Info: / I T TP P 25011 TP P 25012 S G S -T H O M S O N PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR AND CURRENT REGULATION FEATURES • UNIDIRECTIONAL FUNCTION ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V ■ PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA ■ HIGH SURGE CURRENT CAPABILITY

IRHM7250

Abstract: IRHM3250 IRHM4250 IRHM8250 JANSF2N7269 JANSR2N7269
Contextual Info: PD - 90674C IRHM7250 JANSR2N7269 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) RDS(on)

Contextual Info: PD-5.045 International Iö R Rectifier IGBT SIP MODULE Features CPV362M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 fis@ 125°C, \feE = 15V • Fully isolated printed circuit board mount package

IRHM8450

Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Contextual Info: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

1453a

Abstract: IRG4BC30UD ITT 451 DIODE
Contextual Info: PD 9.1453A IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

irf 460A

Abstract: IRF3710S IRF3710s equivalent mosfet irf3710 AN-994 IRF3710
Contextual Info: PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.028Ω G ID = 46A

irf 460A

Abstract: IRF3710S AN-994 IRF3710
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

2n7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425 JANSR2N7425 2N742
Contextual Info: PD - 91415D IRHM9160 IRHM93160 JANSR2N7425 JANSF2N7425 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/660] HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology

diode bridge LT 405

Abstract: IRG4BC20UD
Contextual Info: PD 9.1449A IRG4BC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC30UD

Abstract: 6000uf igbt 600V
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC50FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

IRG4PC30UD

Contextual Info: PD 9.1462A IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC30UD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC50FD

Abstract: diode 10a 400v CC
Contextual Info: PD 9.1469A IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter