DIODE ITT 310 Search Results

DIODE ITT 310

Abstract: CM75E3Y-12E CM75E3Y-12 00D7243 75e3y
Contextual Info: CM75E3Y-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 75 Amperes/600 Volts Description: CM75E3Y-12E Chopper IGBTMOD™ E-Series Module 75 Amperes/600 Volts Powerex Chopper IG B T M O D ™

DIODE ITT 310

Contextual Info: TSI Terminal set interface protection and diode bridge Features • Stand-off voltage from 62 V to 265 V ■ Peak pulse current: 30 A 10/1000 µs ■ Maximum DC current: IF = 0.2 A ■ Holding current: 150 mA SO-8 Benefits ■ Trisil technology is not subject to ageing and

ECG3100

Abstract: lc 3101 led ECG3102 ECG3103 ECG3105 transistor p58 ECG3101 ECG3104 transistor p26 ecg 100 transistor
Contextual Info: Infrared Detector D io d e s ECG Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r IV Max. Dark Current ID »A) Min Light Current ILI/jA) Power Dissipation PD (mW) Rise Time tr (nS) Typ Detection Angle Typ Detection Wavelength (nm)

Contextual Info: Preliminary SMBL1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • Boost(Step Up) Converter • Dynamic Braking for Motor Drive

Contextual Info: Preliminary SMBH1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • Buck(Step Down) Converter ABSOLUTE MAXIMUM RATINGS

SK40100C

Abstract: SK4040C SK4050C SK4060C SK4070C IC NE 555
Contextual Info: SflE » DIOTEC ELECTRONICS CORP DIOTEC ELECTRONICS CORP. 2 0 4 1 1 0 7 0 0 0 0 0 3 3 774 I • »IX Data Sheet No.: SBDT-4000-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 D l C Tel.: 310 767-1052 Fax: (310) 767-7958 TQ-247 fTO-3Pi 40 AMP SCHOTTKY BARRIER RECTIFIERS

Contextual Info: Preliminary SM2G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • General Purpose Inverters

Contextual Info: BS809 N-Channei Enhancement Mode DMOS Transistor Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown

V30400

Abstract: 300V dc dc STEP DOWN SMBH1G75US60 igbt buck converter
Contextual Info: Prelim inary SMBH1G75US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S Package code : 7-PM-AA

300V dc dc boost converter

Abstract: SMBL1G75US60 300V dc to dc boost converter IGBT gate drive for a boost converter
Contextual Info: Prelim inary SMBL1G75US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S Package code : 7-PM-AA

"welding circuit " IGBT

Abstract: dc welding machine circuit diagram SM2G75US60 dc servo igbt diagram V30400
Contextual Info: Prelim inary SM 2G75US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S • • • • • Package code : 7-PM-AA

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

diode lt 250

Abstract: 75150PC
Contextual Info: Preliminary SMBL1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-AA • Boost(Step Up) Converter

75150pc

Contextual Info: Preliminary SM2G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-AA

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

MSM5298

Abstract: LC758
Contextual Info: SANYO SEMICONDUCTOR CORP C o n tin u ed fro m p reced ing p a g e . 32E D • 7cH7D7b 00075^7 2 ■ T~£$~/3 LCD CONTROLLERS, DRIVERS raonolitM cintegratedcircuit \ 1, * Ty p e ■ ; N u m b er Ï] « LA 5 6 4 0 N -Vi & V ’ Packagi P in s & ‘ ’ Package -

TR20X3

Abstract: DFI01 OR02D
Contextual Info: December 1989 FGA S eries A S PE C T- ECL G ate A rrays General Description The FGA Series is a new generation of ECL gate arrays based on National’s ASPECT process. These advanced ECL gate arrays, ranging from 200 to over 30,000 equiva­ lent gates, offer typical internal propagation delays of

em 518 diode

Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I

SSH22N50

Abstract: SSH22N50A
Contextual Info: SSH22N50A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ VDS = 500V ■ Lower R DS(ON) : 0.197 n (Typ.)

Contextual Info: A dvanced P ow er Te c h n o l o g y O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IV' 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Q 0.40Í2 0.45ÍÍ 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M0SFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

agbf

Abstract: LT 5351
Contextual Info: Revised Date Classi­ fication tnd. Content enactment Ft# Electric Ca,LtcL Records Applied date Issued date Brawn Checked Approved - MS5F3241 # »4-004-06 3 IM B I 4 O O M B - I 3 0 t. Outline Drawinn Unit : ma 2. Equivalent circuit -OB c o- o Ô G *NUJ (Over Carrent Liai ting Circuit

Contextual Info: bitemational [g»lRectifier HEXFET Power MOSFET • • • • • • • PD -9.1225 IRFD310 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d s s = 400V

Contextual Info: bitemational ^R ectifier Data Sheet No. PD-6.077 IRQ3H42Q HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation