DIODE KIV Search Results

DIODE KIV

Abstract: SIDAC KIV DIODE KIV 4 diode KIV 8 diode KIV 70 DIODE KIV 2 kiv 07 sidac violet kiv diode KIV* diode
Contextual Info: SIDAC SILICON DIODE FOR ALTERNATING CURRENT Sidac Features 1. Symmetrical characteristics. 2. Directly switching performance to commercial power sources and generating pulse by simple circuit. 3. The glass passivation ensures high reliability. Application

Contextual Info: l u v s t * * * - !* l&MXJ'Jyif Low Noise Bridge Single In-line Package Bridge Diode • ^ ^ H l OUTLINE DIMENSIONS LN1VB60 600V 1.2A 45 £ 1 • S IP llv t r - V «a± *nîEowcB, MMfàM RATINGS Absolute Maximum Ratings (i&Âw*v>^ê- T/ =25°C m s Item

Contextual Info: î/y^n/'fy^'fyM - j'j v V ÿ 'C t - F Bridge Diode Single In-line Package OUTLINE DIMENSIONS D2SB 800V 1.5A 45 £1 •»süsipn’s /'r-y RATINGS • ÌÈ $ ÌÌt ^ /È !Ì& a s Item «ffSK Storage Temperature »•S-SIJfiK Operating Junction Temperature Maximum Reverse Voltage

D2SB 73

Abstract: d2sb
Contextual Info: - j'j v V ÿ 'C t - F Bridge Diode î / y ^ n / ' f y ^ ' f y M Single In-line Package OUTLINE DIMENSIONS D2SBA 600V 1.5A 45 £1 •»süsiPA’y 'r -y • H I fsm RATINGS • ÌÈ $ ÌÌt ^ /È !Ì& a s Item fa -t Symbol Operating Junction Temperature Tstg

LN1WBA60

Abstract: D1AA
Contextual Info: UM XJUySf Bridge Diode T 2 7 M > 5 - < 'Æ Low Noise Bridge Dual In-line Package • ^ ^ H l OUTLINE DIMENSIONS LN1WBA60 600V 1.1 A 45 £1 •/MUDIPA’s / i r - y «fiLtCD SâSEO LY C B:, Ü E P tt« £ C ! B B < MMfàM RATINGS A b so lu te M axim um R ating s

Contextual Info: Bridge Diode Surface Mounting Device OUTLINE DIMENSIONS Package : 1W 7.6 L N 1 W B A 6 0 600V 1.1 A ¡HSU • / J M U S M D A " '7 ^ - y I 2.0 ti i i LeP pu 0.8MIN \r hC a25 UMAX MMfáñ RATINGS TI Absolute Maximum Ratings m a Item Storage Temperature s-s-gusa

2FI50G

Abstract: diode 9D Bp
Contextual Info: 2 R 5 0 G 2 x 50A Jl' M ttM '& ii •O utline Drawings FAST RECOVERY DIODE MODULE ■ t t f t ! Features S h o rt Reverse Recovery Tim e V ariety o f C o n n e c tio n M e n u • IfeHJf2 Insulated Type ■ f f l i i * A pplications A rc -W e ld e rs •

2FI50A

Abstract: T760 T810 T930 lthf* E3
Contextual Info: 2FI50A 2 x50A ! Outline Drawings FAST RECOVERY DIODE MODULE • 4# : Features • S h o rt Reverse Recovery Tim e • V ariety o f C o n n e c tio n M e n u • SfeSfîfé Insulated Type ■ ff liÊ i A pplications A rc -W e ld e rs • K ffl • F re e -W h e e lin g D iode

SHINDENGEN DIODE

Abstract: KIVF
Contextual Info: y 3 y h * / i ' J T f ' f ï - F Schottky Barrier Diode_ y 'O m Twin Diode • fl-J fê tfâ s IS I O U T L IN E D IM E N S IO N S S60SC6 M 60V 60A IS il • T j 1 50TC ♦ P hrsm y7 A ' 3 y i ' i S a i I • e jc ô '/j'S x i ffl m msRmm • D C /ü C z iV A - S '

H A 431

Abstract: BYV43F BYV43F-35 BYV43F-40A M1208 M2845
Contextual Info: — 1.1 N AUER PHILIPS/DISCRETE ObE D • _ bbS3T31 0011407 fl BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical

KDS 9E

Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Contextual Info: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter

Marking Code FGs

Abstract: MARKING CODE AGS E6906 BSP135
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • rDS BSP 135 6oo v • /„ ® • • • • 0.100 A ^ D S o n 60 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Information Pin Conf gura tion Marking Package

shockley diode

Abstract: shockley diode applications K1V15 shockley SIDAC K1V K1V18 k1v8 diode k1v sidac
Contextual Info: — E FOR ALTERNATING CURRENT ttä m v m E E G m za n tm * By adding regulated vo lta g e , the S ID A C is a semiconductor which can conduct in either direction. If the current flow passing through the element becomes lower than the holding current, the SIDAC

D20XBD

Contextual Info: - j'j v V ÿ 'C B rid g e D io d e î / y ^ n / ' f y ^ ' f y M t - F Single In-line Package O U T L IN E D IM E N S IO N S D20XB TO 800V 20A 45 £1 •»sü siP A ’y ' r - y •U L1S W UL File No,E 1 4 2 4 2 2 • m n • S fÎJ E E x n H I fsm RATING S

KIV* diode

Abstract: marking 77s
Contextual Info: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV i <; i a 1 1 Mr v • HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm

Contextual Info: TO SH IB A TC74HC02AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC02AP, TC74HC02AF, TC74HC02AFN QUAD 2 -INPUT NOR GATE Note The JEDEC SOP (FN) is not available in Japan. The TC74HC02A is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

PCF 7953

Abstract: J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code
Contextual Info: UM0877 User manual 1.4 kW digital power factor corrector based on the STM32F103ZE Introduction This system has been designed to evaluate the capabilities of the high-density STM32F103ZE microcontroller to perform a digital power factor corrector. An application

Contextual Info: TOSHIBA TC74HC04AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC04AP, TC74HC04AF, TC74HC04AFN HEX INVERTER Note The JEDEC SOP (FN) is not available in Japan. The TC74HC04A is a high speed CMOS IN V ER TER fabricated with silicon gate C2MOS technology.

CS-5208-1T3

Contextual Info: CS-5208-1 lì CS-5208-1 8A LDO 3-Pin Adjustable Linear Regulator Features D escription The CS-5208-1 linear regulator pro­ vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis­ tors to set the output voltage and

si2kc20

Abstract: 2SC3262 S5K020 KIV24 KIV22 KIV26 KIV6 KIV-6 S5KC20H S5KC20R
Contextual Info: Tb DE 1 0 T 5 3 S 1 S DD0D17Ö 3 A t t i l i ? « SEMICONDUCTOR T E SHINDENGEN - 0 3 - 0 / A R ISTO-CRAFT -J -P 7 , h u * / * y ni lo A & DIK20 DIK40 DIK20H S2K20 S2K40 S2K20H S3K40 S6K20 S6K40 S6K20H 0.6 1.2 1.8 6 V rm (V) 200 400 200 200 400 200 400 200

BF908 Application Note

Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Contextual Info: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS

Contextual Info: TO SHIBA SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE <;r;finnniY? Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM = 6 0 0 0 V a r> • • • • Peak Turn-Off Current Critical Rate of Rise of On-State Current : di /d t = 500A//js

Contextual Info: General Information The Teccor SIDACtor is a solid state transient voltage protector designed for use in telephony, data, and some AC applications. The SIDACtor is a bidirectional device that is normally connected to the high side of a circuit and common. The

JW-22CU

Abstract: diode KIV 63 JW212 jw-2pg E2J zener diode ZW-101PG1 JW20H jw-13pg diode KIV 62 ZW-160RS1
Contextual Info: Version 1.7 Produced in May 1998 Sharp Programmable Controller New Satellite User's Manual * Hardware version SHARP JW20 ä Is ! “ 3 L_.J . 1 ì : ~ i © : — JW20H We thank you for your purchase of the SHARP programmable controller JW20H. This booklet user's manual, hardware version explains mainly the JW20H&#39;s hardware; the