DIODE LT 341 Search Results

diode lt 341

Abstract: MICRO ELECTRONICS ltd transistor
Contextual Info: MICRO ELEC TRONICS LT» MIE D bOWûfl aüO[H7ô ñ C 3 MEHK MIC31TH INFRARED EMITTING DIODE MIC31TH is a GaAlAs infrared emitting diode molded in clear 3mm 0 package. With the lensing effect of the package, it has an narrow radiation angle measured from the optical axis to the half power

IRF34

Abstract: IRF340 IRF341 IRF342 IRF343 6Z64
Contextual Info: - 7 964 142 S A M S U N G S E M I C O N D U C T O R Tfi ¡>F| 7 ^ 4 1 4 3 DGDSin t, | INC 9 8 D O 51 1 9 . - D T -3 f-'/3 N-CHANNEL POWER MOSFETS IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .

IRF740

Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

QM50DY-2HB

Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM50DY-2HB | MEDIUM POWER SWITCHING USE i INSULATED TYPE I QM50DY-2HB • lc Collector cu rre n t. 50A • Vcex C ollector-em itter v o lta g e . 1000V • hFE DC current g a in . ,.750

RHRG75120

Abstract: hyperfast diode
Contextual Info: RHRG75120 interrii D a ta s h e e t January 2000 File Num ber 3414.3 75A, 1200V Hyperfast Diode Features The RHRG75120 is a hyperfast diode with soft recovery characteristics trr < 85ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated

RHRG30120

Abstract: TA49041 1200v diode to247
Contextual Info: RHRG30120 interrii Data Sheet J a n u a ry . m File Num ber i 3410.3 30A, 1200V Hyperfast Diode Features The RHRG30120 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

diode lt 246

Contextual Info: / T lin t iA R LT1034-1.2/LT1034-2.5 M ic ro p o w e r Dual R efere nce TECHNOLOGY KRTURCS D C S C R IP TIO n • Guaranteed 20 ppm/°C Drift H Package and Z Package ■ Guaranteed 40 ppm/°C Drift (S O -8 Package) ■ 20uA to 2 0 m A Operation ( 1 .2V)

f341

Abstract: 2S1214
Contextual Info: Tfi 7 9 6 4 142 SAMSUNG ¡> F | 7 ^ 4 1 4 3 SE M IC O N D U C T O R D G D S in t, | .9 8 D O 51 1 9 I NC D T -3 f-'/3 N-CHANNEL POWER MOSFETS . - IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .

4511 7-segment display

Contextual Info: MM54HC4511/MM74HC4511 BCD-to-7 Segment Latch/Decoder/Driver General Description Features This high speed latch/decoder/driver utilizes advanced silicon-gate CMOS technology. It has the high noise immunity and low power consumption of standard CMOS integrated

IRF340

Abstract: IRF341 IRF342 IRF343 RC9S
Contextual Info: Standard Power MOSFETs- IRF340, IRF341, IRF342, IRF343 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A and 10 A, 350 V - 400 V rDscom = 0.55 O and 0.8 O

93411

Contextual Info: ^ TTL ISOPLANAR MEMORY 93411/93411A 2 56x1—BIT FULLY DECODED RANDOM ACCESS MEMORY DESCRIPTION — The 93411 and 9 3411A are high-speed 2 5 6 -b it TTL Random Access LOGIC SYM B OL Memories w ith fu ll decoding on chip. They are organized 256 words by one bit and are

irf 1740

Abstract: GA200TD120U
Contextual Info: PD - 5.061B PRELIMINARY GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

BUZ 338

Contextual Info: Standard Power MOSFETs BUZ 73 A File Number 2263 N-Channel Enhancement-Mode Power Field-Effect Transistors 5.8 A, 200 V TDSIoni = 0.6 O N-CHANNEL ENHANCEMENT MODE D Features: • SOA is p ow er-dissipation lim ited m N anosecond s w itching speeds m Linear transfer characteristics

triac tic 2260

Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

Contextual Info: L IN D oc # ; 341643 W F M T Y M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r 3 V I n n o v a t i o n o f P Undervoltage Sensing r o d u c t i o n D The MC33164-3 an d MC34164-3 are undervoltage sensing circuits d esigned specifically for use as reset controllers in

fr9210

Abstract: F 9212 u921
Contextual Info: IRFR9210/9212 IRFU9210/9212 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • L ow e r R d s o n Im p ro ve d in d u ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te c e ll stru ctu re Low er in pu t c a p a c ita n c e

GA200TD120U

Contextual Info: International IOR Rectifie f PD - 5.061 B P RE LI MI NAR Y GA200TD120U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V ces = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: Order this data sheet by MC34161/D MA* 2 8 193!^ MOTOROLA MC34161 MC33161 SEMICONDUCTOR TECHNICAL DATA Advanced Information Universal Voltage Monitor UNIVERSAL VOLTAGE MONITOR The M C 34161, M C 3 3161 series are universal voltage monitors intended for use in a wide variety of voltage sensing applications. These devices offer the

BATTERY CHARGE I.C

Abstract: LTC1733 Mosfet current sense
Contextual Info: advertisement Li-Ion Linear Charger Allows Fast, Full Current Charging While Limiting PC Board Temperature to 85°C – Design Note 283 Fran Hoffart Thermal Feedback Loop Limits IC Temperature A thermal feedback loop limits the maximum junction temperature of the LTC1733 to approximately 105°C, well

ic 3524 boost regulator

Abstract: military resistors catalog LTC4110EUHF LT3755 vienna rectifier FPGA-based LCD driver circuit LTC3524 lt3080 LT6107 lt5538
Contextual Info: May 2008 New Products Catalog High Performance Analog ICs LTC6420-20 Dual Matched 1.8GHz Differential Amplifiers/ADC Drivers LTC2274 16-Bit, 105Msps Serial Output ADC LT5538 40MHz to 3.8GHz RF Power Detector with 75dB Dynamic Range LTC3558 Linear USB Battery Charger with Buck and

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

Contextual Info: DATA S H E E T AUGUST 1998 Revision 4.0 SK70704/SK70707 or SK70708 1168 Kbps HSDL Data Pump Chip Set General Description Features The H D SL Data Pump is a chip set consisting of the following two devices: Fully integrated, 2-chip set for interfacing to 2-wire

GE SC160B triac

Abstract: C203B varistor 7k 270 H11AG1 H11AG2 H11AG3 dt230h
Contextual Info: “g e solid state 01 De | 3 0 7 5 0 0 1 0 0 1 ^ 7 0 2 o p t o e le c t r o n ic S p e c if ic a t io n s T-qi-83 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 j-1 . Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llAG series consists of a gallium arsenide infrared 3

BUZ76

Contextual Info: SEMELAB LT» 37E » 0133167 G000275 fl « S M L B SEMELAB ju:; £ s «6? » BUZ 76 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm _ 1 0 .3 _ ma». ¿.5ma* 1.3 2.8 5 .9 t i 15.8 Ä min. APPLICATIONS >.i 10 mo* I • SWITCHING REGULATORS