DIODE LT 725 Search Results

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAV99 DIODE H I GH CON DU CT AN CE U LT RA FAST DI ODE ̈ EQU I V ALEN T For 3 Pin Package For 6 Pin Package ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R

CBAS17

Contextual Info: Central Sem iconductor Corp. CBAS17 LOW V O LT A G E STABISTOR DESCRIPTION: T h e C E N T R A L S E M IC O N D U C T O R C B A S 1 7 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91.

MMBV3102L

Abstract: MMBV3102LT1 sot diode marking 303
Contextual Info: SILICON EPICAP DIODE MMBV3102LT1 . . d e sign e d in the Surface M o u n t package for general freq u en cy control and tun ing applications; p ro vid in g solid-state reliability in replacem ent of m echanical tun ing m ethods. CASE 318-07, STYLE 8 SOT-23 TO-236AB

LTspice

Abstract: Acbel schematic diagram switching power supply NTC 15K LT8582 LT3786 XAL6060-472ML High Current Battery Charger adapter battery hp 19V Sanyo supercapacitors LTC3115-1
Contextual Info: April 2012 I N T H I S I S S U E 2.5MHz, dual monolithic supply with integrated 3A power switches 12 digital power manager sequences any number of supplies 28 dual monolithic ideal diode extends battery life 34 supercapacitor-based power supply backup 36 µModule DC/DC converter

Contextual Info: JAN, JANTX, JANTXV,4N22, 4N23, 4N24 OPTOCOUPLERS mu O P T O E LE C TR O N IC PRODUCTS D IV IS IO N A V A ILA B LE T H R O U G H DISTRIBUTION FEATURES: • Base lead provided for conventional transistor biasing • Overall current gain.1.5 typical 4N24

PH0810-15

Contextual Info: m an A M P com pany Wireless Bipolar Power Transistor, 15W 850 - 960 MHz PH0810-15 V2.00 .975 <2 4 .77 " Features • • • • • .725 <18.42)"" D esigned for l.i n e a r A m plifier A pplications Class AB: -30dBc Typ 3rd 1MD at 15 W atts PHP C o m m o n K m itter C onfiguration

2SK790

Abstract: HSO16 2SK79 1SV35
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS

ch7j

Abstract: L238B
Contextual Info: PLE SS EY SEMICONDUCTORS 1 2E A PLESSEY W S em icon d u ctors 7250513 D 000^330 5 . T-T 7-Cn-05 M L238B 8-CHANNEL TOUCH CONTROL INTERFACE The ML238B is an eight channel sense circuit designed specifically for touch tuning in colour and monochrome television receivers. Using low threshold P-MOS technology,

construction of varactor diode

Contextual Info: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

Contextual Info: JAN-, JANTX-, JANTXV- 4N22A, 4N23A, 4N24A OPTOCOUPLERS mu O P T O E L E C T R O N IC P R O D U C T S DIVISION A V A IL A B L E T H R O U G H D IS T R IB U T IO N FEATU RES: The collector Is electrically Isolated from the case on the 4N22A, 4N23A, and 4N24A only.

mc12149

Contextual Info: Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

MA393

Abstract: MC12147 MC12147D MC12149 MC12202 motorola varactor
Contextual Info: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

ML12149-5P

Abstract: LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D ML12149 ML12210 so8 Wire bond
Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

Diode lt 725

Abstract: P6020P
Contextual Info: Sept mber 1997 s e m ic d n d u c t o r NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

1BH62

Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage

construction of varactor diode

Abstract: MA393 varactor diode high frequency MC12147 MC12147D MC12202
Contextual Info: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

ML12149-5P

Abstract: ML12210 MA393 MC12149 MC12149D ML12149 LT 725
Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

Contextual Info: /Twm _ TECHNOLOGY LT1170/LT1171 /LT1172 ] ooicHz, 5A, 2.5A a n d 1.25A High Efficiency Switching Regulators F€OTUft€S DCSCMPTIOn • Wide Input Voltage Range: 3V to 60V ■ Low Quiescent Current: 6mA ■ Internal 5A Switch 2.5A for LT1171,1.25A forLH 172

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

MC12149

Abstract: MA393 MC12149D MC12202
Contextual Info: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

construction of varactor diode

Abstract: varactor diode high frequency MA393 MC12147 MC12147D MC12202
Contextual Info: Freescale Semiconductor, Inc.Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA DEVICE TO BE PHASED OUT. ARCHIVE INFORMATION Freescale Semiconductor, Inc.