DIODE MARKING 7B Search Results

Contextual Info: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22

Contextual Info: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I • Features Outline Drawing Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I -CATHODE MARKING SYMBOL A - I Applications • High speed power switching

BAS29

Abstract: BAS31 BAS35 diode 7B4
Contextual Info: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21

Contextual Info: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04

Contextual Info: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT42XV2 BAT43XV2 Device Marking 6B 7B TA = 25°C unless otherwise noted Parameter

BAT42XV2

Contextual Info: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT42XV2 BAT43XV2 Device Marking 6B 7B TA = 25°C unless otherwise noted Parameter

DIODE marking ED

Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Contextual Info: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.

Contextual Info: SIEMENS BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB619C yellow S 1 =C SOD-123 Q62702-B683 2 =A Maximum Ratings Parameter Symbol Values

sage resistor

Contextual Info: 7BRADF0RDELECTRONICS REQUEST FOR QUOTATION/ORDER SHEET CUSTOM NETWORKS Complete and return for a competitive quote on a custom Bradford network designed around your circuit requirements. Customer Name & A

Contextual Info: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching

Contextual Info: POWEREX I NC 1SE D • 7BTMLB1 0 D G 3S 5 3 2 ■ T - 2 .5 ' ^ 2 3 r<M/EREX C C 42 C N 47 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode Center Tap

Contextual Info: ?W O ?b Ordering number:EN1281C 0 0 1 S 0 S S 0 7b LB1268 N0.1281C SA \Y O i Monolithic Digital IC 3-Channel, High-Current, Low-Saturation Driver Array Features and Functions • 3-channel magnet driver • High current 2.0A max. and low saturation voltage (1,5V)

gy-80

Abstract: 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654
Contextual Info: PANASONIC INDL/ELEK-CSEHI} 7BC D | □□□C]5D4 S f ï f ^ T 2SD1149 2SD1149 '> ij 3 > N P N N P N Epitaxial Planar T JU’/ U — i f i J i & i i i U f f l / A F Am plifier • 4$ Î S /F e a tu re s

MIL-STD-750 METHOD 2036

Abstract: HP 5082-0180 5082-0833 hp 5082-0151 hp 5082 step recovery 5082-0112 5082-0153 5082-0840 hp 5082 0180 5082-0180
Contextual Info: HEWLETT-PACKARD/ CHPNTS LIE ]> • 4447504 GQG'ì7S2 7b2 Whaì HEWLETT iL'ttà PACKARD Glass Packaged Step Recovery Diodes Stài13114 Technical Data 5082-0153 5082-0180 5082-0833 5082-0840 Features • Optimized for Both Low and High Order Multiplier Designs from UHF through

Contextual Info: BAS19 BAS20 BAS21 tbS3^31 002M270 7bb • APX N A HER PHILIPS/DISCRETE b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a microminiature plastic envelope. They are intended for switching and general purposes. QUICK REFERENCE DATA

Contextual Info: u im TECHNOLOGY LT13 0 7/LT13 0 7B Single Cell Micropower 600kHz PWM DC/DC Converters FCflTURCS D C S C R IP T IO n • Uses Small Ceramic Capacitors ■ 50jjA Quiescent Current LT1307 ■ 1m A Quiescent Current (LT1307B) ■ Operates with V|N as Low as 1V

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

13001 s 6B

Abstract: AUIRS21844 SD-50 Rectifier Diode marking MDt AUIRS2184 AS2184 AUIRS21844S
Contextual Info: Automotive Grade AUIRS2184 4 S HALF-BRIDGE DRIVER Features • • • • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V

Contextual Info: Product specification Philips Semiconductors Schottky barrier double diodes BAT54W series PINNING FEATURES • Low forward voltage BAT54 PIN • Guard ring protected • Very small SMD package. APPLICATIONS W AW CW SW 1 a 2 n.c. ki k2 ai a2 ai k2 3 k i ►?)

smd k1p

Abstract: smd diode k2 smd diode marking code a2 smd diode code l4 smd diode marking HA MBC870 10j smd diode A2 diode smd A2 DIODE SMD CODE MARKING k1p diode
Contextual Info: Product specification Philips Semiconductors Schottky barrier double diodes BAT54W series PINNING FEATUR ES • Low forward voltage BAT54 PIN • Guard ring protected • Very small SMD package. 1 2 APPLICATIONS 3 W CW AW a n.c. k SW ai ai k2 a2 ai, a2 ki, k2 ki, a2

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

1N967B

Abstract: 1N967B FAIRCHILD
Contextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200

M24 sot23

Abstract: M05 SOT-23 marking code M05 marking code SM diode M15 SOT-23 marking code m05 sot23 6
Contextual Info: SEMTECH Today*« R a u ik i.1 Revised - February 16, 1999 S M 05 thru 300W Surface Mount TVS Diode TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SM series of transient voltage suppressors TVS are designed to protect components which are

Melcher family K 1000

Abstract: Melcher M 1000 MELCHER THE POWER PARTNERS Melcher dc dc converter melcher Melcher K 1000 melcher imr 15 BW 6122 converter diagram Melcher family K 1000 ac-dc
Contextual Info: Benign Environment DC-DC Converters <40 W IMR 6-Family DC-DC Converters IMR 6-Family Input to output isolation test voltage 500 V DC Single or dual output • Input voltage range up to 3:1 • Input filter • High efficiency up to 75 % • • • • Outputs short-circuit-proof